Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Takashi Otsuka

Tomoyuki Komori

Yuji Zenitani

Tomoko Suzuki

Hiroaki Fujimoto

Takayuki Yoshida

Ichiro Yamane

Tadaaki Mimura

Yoshiaki Kasuga

Takio Yamashita

Toshio Matsuki

Hideharu Takezawa

Atsushi Omote

Kaoru Nagata

Hisato Takeuchi

Yuichi Tateyama

Shoichi Imashiku

Shigeo Masai

A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100&#xb0; C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80&#xb0; C. and not more than 150&#xb0; C., and thereafter maintained at a temperature of not less than 200&#xb0; C. and not more than 400&#xb0; C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.

Proton-conducting structure and method for manufacturing the same

An electrode for an electrochemical element reversibly absorbing and releasing lithium ions including: a current collector having a higher first convex portion and a lower second convex portion on at least one surface thereof; a columnar body including an active material formed in such a manner as to rise obliquely on the first convex portion and the second convex portion of the current collector.

Electrode for electrochemical element and electrochemical element using the electrode

A fuel cell capable of operating under a high temperature environment and under a low humidity environment and a method for generating an electric power with use of the fuel cell. The fuel cell comprises an electrolyte membrane, an anode electrode, and an cathode electrode. In each of the anode electrode and the cathode electrode, a catalyst is held on a catalyst support, and an electrolyte covers the catalyst and the catalyst support. The cathode electrolyte is composed of SnO, NH, HO, and HPO. A molar ratio X represented by X&#x2550;NH/SnOis not less than 0.2 and not more than 5, and a molar ratio Y represented by Y&#x2550;P/Sn is not less than 1.6 and not more than 3.

Method for generating an electric power with use of a fuel cell and a fuel cell

A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100&#xb0; C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80&#xb0; C. and not more than 150&#xb0; C., and thereafter maintained at a temperature of not less than 200&#xb0; C. and not more than 400&#xb0; C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of greater than 6.

To provide a MOS varactor in which oscillation frequency variation is small and variation in a capacitance changing voltage is small, and a voltage-controlled oscillator using the MOS varactor, as a load capacitor of an oscillating circuit composed of a feedback resistor, an amplifier, and a crystal vibrator, a variable electrostatic capacitor, which is generated between drain/source terminals and a gate terminal of each of MOS transistorsandeach of which source and drain terminals are short-circuited, is connected. A bulk terminal of each of the MOS transistorsandis connected to one terminal of a resistor, a voltage is applied to the other terminal of the resistor, the bulk terminal of each of the MOS transistorsandis connected to one terminal of a capacitor, and the other terminal of the capacitoris grounded.

MOS varactor and voltage-controlled oscillator using the same

The present invention reduces crosstalk, which occurs as a result of interference between signals running in each of respective wiring layers of a first semiconductor chip and a second semiconductor chip stacked surface to surface with a small gap. The semiconductor device includes a first semiconductor chip 1 having a first electrode pad 2 and a first wiring layer 9 in the main surface, and a second semiconductor chip 5 having a second electrode pad 6 and a second wiring layer 10 in the main surface confronting the first semiconductor chip. A bump 4 is provided for electrically coupling the first electrode pad 2 and the second electrode pad 6 together. An insulation layer 8 is disposed between the main surfaces of first semiconductor chip 1 and second semiconductor chip 5. An electro-conductive layer 7 is disposed between the main confronting surfaces of the first semiconductor chip and the second semiconductor chip.

Structure of chip on chip mounting preventing from crosstalk noise

The present invention reduces crosstalk noise, which occurs as a result of interference between signals running in each of respective wiring layers of a first semiconductor chip and a second semiconductor chip stacked surface to surface with a small gap. The semiconductor device includes a first semiconductor chip (1) having a first electrode pad (2) and a first wiring layer (9), and a second semiconductor chip (5) having a second electrode pad (6) and a second wiring layer (10). A bump (4) is provided for electrically coupling the first electrode pad (2) and the second electrode pad (6). An insulation layer 8 is disposed between confronting surfaces of the first semiconductor chip (1) and the second semiconductor chip (5). An electro-conductive layer (7) is disposed between the confronting surfaces of the first semiconductor chip and the second semiconductor chip.

Growing community of inventors

Osaka, Japan

Takashi Otsuka