Screen Holdings Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Takashi Ota

Taiki Hinode

Hiroshi Abe

Manabu Okutani

Akio Hashizume

Kazuhide Saito

Naohiko Yoshihara

Yuya Akanishi

Masayuki Hayashi

Takahiro Yamaguchi

Kunio Yamada

Jiro Okuda

Kenji Kobayashi

Ryo Muramoto

Hideji Naohara

Sei Negoro

Mitsukazu Takahashi

Naoki Fujiwara

Hiromichi Kaba

Rei Takeaki

Toru Edo

Kazuhiro Honsho

Toshihito Morioka

Tomoaki Aihara

Toshimitsu Namba

Kazuhiko Nakazawa

Hiroshi Horiguchi

Wataru Sakai

Naoki Sawazaki

Takaaki Ishizu

Makoto Takaoka

Takashi Ikeuchi

Akihiro Nakashima

Asuka Wakita

Yasunori Nakamura

Yusuke Akizuki

Kyohei Nakanishi

Takao Itahara

Tatsuya Shimano

Yasukatsu Kamihiro

A substrate processing apparatus delivers a gas between a lower surface of a substrate and a base surface of a base part to form an airflow flowing radially outward and to cause a pressure drop in a space between the substrate and the base part by the Bernoulli effect. The base surface includes a second surface sloping upward in a radially outward direction. A third surface slopes downward in a radially outward direction from the outer peripheral edge of the second surface. A fourth surface is an annular surface contiguous to the lower edge of the third surface. The fourth surface expands radially outward outside the outer peripheral edge of the substrate in the radial direction. Accordingly, it is possible to suppress adhesion of a processing liquid to the lower surface of the substrate and to improve the stability of holding the substrate.

Substrate processing apparatus

The substrate has a plurality of chip regions each being provided with a structure to be a power device, and is provided with a to-be-processed film. The thickness profile of the to-be-processed film in the radial direction is measured by scanning with the sensor in the radial direction while the substrate is rotated. The average thickness of the thickness profile is calculated. At least one radial position where the thickness profile has an average thickness is extracted as at least one candidate position. At least one of the at least one candidate position is determined to be at least one measurement position. Processing liquid is supplied from a nozzle onto the to-be-processed film of the substrate while the substrate is rotated. The sensor monitors the time-dependent change in the thickness of the to-be-processed film in at least one measurement position while the substrate is rotated.

Substrate processing method including thickness monitoring

A substrate treatment apparatus includes a nozzle, a moving mechanism, a storage portion, and a control portion. The learned model is generated by learning, as learning data, learning target speed information indicating a moving speed of the nozzle and the amount of treatment acquired by executing a treatment on a substrate that is a learning target while causing the nozzle to move at a speed based on the learning target speed information. The control portion causes speed information at the time of treatment to be outputted from the learned model by inputting a target amount of an amount of treatment to the learned model. The control portion controls a moving mechanism such that the nozzle moves at a speed based on the speed information at the time of treatment when the treatment is executed on a substrate that is a treatment target.

Substrate treatment apparatus, substrate treatment method, substrate treatment system, and learning data generation method

A learned model generating method includes: acquiring learning data; and generating a learned model for estimating a factor of an abnormality of a processing target substrate after processing using a processing fluid by performing machine learning of the learning data. The learning data includes a feature quantity and abnormality factor information. The abnormality factor information represents a factor of an abnormality of a learning target substrate after processing using the processing fluid. The feature quantity includes first feature quantity information representing a feature of a time transition of section data in time series data representing a physical quantity of an object used by a substrate processing device that processes the learning target substrate using the processing fluid. The first feature quantity information is represented using times.

Learned model generating method, abnormality factor estimating device, substrate processing device, abnormality factor estimating method, learning method, learning device, and learning data generating method

A processing condition selection method includes a step (S) and a step (S). In the step (S), a thickness pattern TM that represents a distribution of thicknesses measured at respective measurement points on a target is compared to pre-stored reference patterns (RP) to specify a reference pattern (RP) having a high correlation with the thickness pattern (TM) from among the reference patterns (RP) based on a prescriptive rule. In the step (S), a reference processing condition associated with the specified reference pattern (RP) is acquired as a processing condition for the target from among reference processing conditions associated with the respective reference patterns (RP). The reference patterns (RP) each represent a distribution of physical quantities of a corresponding one of reference targets. The reference processing conditions each are a processing condition when processing is previously performed on a corresponding one of the reference targets with a corresponding one of the reference patterns (RP).

Processing condition selection method, substrate processing method, substrate product production method, processing condition selecting device, computer program, and storage medium

A substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a treating unit and a controller. The treating unit includes a substrate holder, a rotation driving unit, a treatment liquid supplying unit, a liquid collecting unit, and a guard driving unit. The substrate holder holds a substrate in a horizontal posture. The rotation driving unit rotates the substrate holder. The liquid collecting unit includes a first guard, a second guard, and a liquid inlet. The first guard and the second guard are arranged so as to surround the substrate holder laterally. The liquid inlet is defined by the guards. The liquid inlet is open toward the substrate held by the substrate holder. The guard driving unit moves the second guard in a vertical direction. The controller controls the guard driving unit in accordance with the shape of the substrate held by the substrate holder, thereby changing a height position of an upper end of the liquid inlet.

Substrate treating apparatus and substrate treating method

A substrate processing method includes a liquid film forming step of forming a liquid film, a liquid film heat retaining step of keeping the liquid film warm, a gas phase layer forming step of forming a gas phase layer which holds the processing liquid on a center portion of the liquid film, an opening forming step of forming an opening in the center portion of the liquid film by excluding the processing liquid held by the gas phase layer, a substrate rotating step of rotating the substrate around a rotation axis, and an opening expanding step of expanding the opening, while a state in which the gas phase layer is formed on an inner circumferential edge of the liquid film is maintained, by moving the irradiation region toward a circumferential edge portion of the substrate while the liquid film heat retaining step and the substrate rotating step are performed.

Substrate processing method and substrate processing apparatus

A substrate processing apparatus includes a substrate holder, a processing liquid supplying unit with a liquid nozzle discharging a processing liquid to an upper surface of the substrate. A moving unit moves the supplying unit between a process position at which the liquid nozzle faces the upper surface of the substrate and a retreat position. The supplying unit includes a first flow path in the processing liquid nozzle. The first flow path has one end part and the other end part that face a central region of the substrate and a peripheral region of the substrate, respectively, in a state where the supplying unit is positioned at the process position. It has a second flow path that supplies the processing liquid to the one end part, and a plurality of discharge ports in the processing liquid nozzle that are arranged along the first flow path direction and discharge the processing liquid in the first flow path to the substrate's upper surface.

A substrate processing apparatus includes a temperature detector and a controller. The temperature detector detects a temperature of processing liquid before the temperature of the processing liquid in pre-dispensing in progress reaches a target temperature. The controller sets discharge stop duration of the processing liquid in the pre-dispensing based on target temperature prediction duration. The target temperature prediction duration is prediction duration until the temperature of the processing liquid reaches the target temperature from a detection temperature. The detection temperature is the temperature of the processing liquid detected by the temperature detector before the temperature of the processing liquid reaches the target temperature. The target temperature prediction duration is determined based on a temperature profile. The temperature profile indicates a record of the temperature of the processing liquid changing over time when the pre-dispensing processing was performed in the past according to the pre-dispensing condition.

Substrate processing apparatus and substrate processing method

A substrate treatment apparatus includes: a substrate holding unit; a rotator for rotating the substrate holding unit; a first liquid nozzle for supplying a rinsing liquid; a second liquid nozzle for supplying a low surface tension liquid; a heater; a lifting mechanism for relatively moving up and down the heater between a contact position allowing the heater to be brought into contact with the lower surface of the substrate and a separation position allowing the heater to be separated from the substrate; a gas nozzle provided in an upper surface of the heater to suck the substrate; a suction pump for sucking an atmosphere above the heater through the gas nozzle; a gas supply source for supplying an inert gas toward above the heater through the gas nozzle; and a controller for selectively performing suction of the atmosphere or supply of the inert gas, through the gas nozzle.

Substrate treatment apparatus

A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.

Substrate processing apparatus and substrate processing meihod

Provided is a substrate processing method for processing a substrate. The substrate processing method includes a step of processing the substrate with a phosphoric acid liquid, a step of processing the substrate with a rinsing liquid, and a step of processing the substrate with a chemical liquid containing ammonia. After the substrate is processed with the rinsing liquid, the step of processing the substrate with a chemical liquid removes a portion of thickness of a film in a depth direction of a phosphorus diffusion region from the phosphorus diffusion region formed in the substrate when the substrate is processed with the phosphoric acid liquid.

A substrate processing method includes a substrate holding step of holding a substrate by means of a substrate holder which holds the substrate horizontally with an interval upward from an upper surface of a base, a first processing liquid supplying step of supplying a first processing liquid to an upper surface of the substrate held by the substrate holder, a cleaning liquid supplying step of supplying a cleaning liquid so as to wash away the first processing liquid attached to the upper surface of the base, to the upper surface of the base such that the cleaning liquid on the base does not contact a lower surface of the substrate held by the substrate holder, and a removing step of removing the cleaning liquid from the upper surface of the base.

Substrate processing method

A substrate processing method for processing a surface of a substrate includes: a first solvent supply step (a) of supplying IPA to a surface of a substrate while rotating the substrate to treat the surface; a modification treatment liquid supply step (b) of supplying a silylating solution after the first solvent supply step to form a liquid film; and a step (c) of heating the substrate in the first solvent supply step and the modification treatment liquid supply step. The step (c) is configured such that an amount of heat per unit time to be applied to the substrate in the modification treatment liquid supply step is larger than an amount of heat per unit time applied to the substrate in the first solvent supply step.

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Kyoto, Japan

Takashi Ota