Sharp Kabushiki Kaisha Corporation

Panasonic Corporation

Shionogi Company Limited

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Holdings Corporation

Daikin Industries, Ltd.

Mizuno Corporation

Keio University

Tayca Corporation

Medimmune Limited

Takashi Ono

Reiji Mochida

Masayoshi Nakayama

Kazuyuki Kouno

Yuriko Hayata

Toshio Hata

Hiroaki Onuma

Tsuyoshi Ono

Hiroyoshi Higashisaka

Kazuhiro Kume

Kohji Hanasaki

Takashi Kurisu

Toshihiro Mori

Katsuji Iguchi

Tomoyuki Ogawa

Masayuki Mantani

Junichi Shimoda

Kazuhiro Hasegawa

Hiroshi Itoh

Ryosuke Sugihara

Takuya Kazusa

Minoru Ikeda

Kaoru Seno

Yohei Yamashita

Takeshi Kanda

Yuhsuke Fujita

Hitoshi Suwa

Tomohiro Masui

Kohji Miyake

Katsutoshi Yamada

Kazuto Fujihara

Masaharu Kitano

Mitsuru Kouchi

Keitarou Hoshika

Hiroshi Ebina

Toshihiro Shinosaki

Hiroki Andou

Shu Miura

Shu Wakino

Atsuko Yamamoto

Masashi Kuroishi

Norito Yoshimura

Yoshinari Gahara

Eriko Watanabe

Motoaki Komatsu

Shuhei Shigaki

Tadateru Hamada

Atsushi Morita

Satoshi Itou

A blower includes a propeller fan, and an enclosure. The propeller fan is configured to rotate around a rotation axis. The propeller fan includes a plurality of blades at unequal pitches. The enclosure houses the propeller fan. The enclosure includes a bell mouth. The enclosure has a depth L. The bell mouth includes a cylindrical part parallel to the rotation axis. A length of the blades is H0 in a rotation axis direction, and a length of the cylindrical part is H2 in the rotation axis direction.

Blower and heat pump unit

A humidifying unit humidifies a target space, and includes an adsorption member having moisture adsorption and release areas, a heater that heats the moisture release area, fans to generate an air flow, a housing, an electric component including a heat generating component, and a cooler to air-cool the heat generating component. The housing accommodates the adsorption member, the heater, and the fans. The housing has a humidifying air path through which air taken from outside the housing by the fans is discharged outside the housing via the adsorption member, and a cooling air path in which the cooler is disposed and air taken from outside the housing by the fans is joined with the humidifying air path. A route of air passing through the humidifying air path from the cooling air path and being discharged outside the housing does not pass through the moisture adsorption area of the adsorption member.

Humidifying unit

A neural network computation circuit that outputs output data according to a result of a multiply-accumulate operation between input data and connection weight coefficients, the neural network computation circuit includes computation units in each of which a memory element and a transistor are connected in series between data lines, a memory element and a transistor are connected in series between data lines, and gates of the transistors are connected to word lines. The connection weight coefficients are stored into the memory elements. A word line selection circuit places the word lines in a selection state or a non-selection state according to the input data. A determination circuit determines current values flowing in data lines to output output data. A current application circuit has a function of adjusting current values flowing in data lines, and adjusts connection weight coefficients without rewriting the memory elements.

Neural network computation circuit including non-volatile semiconductor memory element

A neural network computation circuit that outputs output data according to a result of a multiply-accumulate operation between input data and connection weight coefficients, the neural network computation circuit includes computation units in each of which a non-volatile semiconductor memory element and a cell transistor are connected in series between data lines, a non-volatile semiconductor memory element and a cell transistor are connected in series between data lines, and gates of the transistors are connected to word lines. The connection weight coefficients are stored into the non-volatile semiconductor memory elements. A word line selection circuit places the word lines in a selection state or a non-selection state according to the input data. A determination circuit determines current values flowing in data lines to output output data.

A semiconductor module includes a ground substrate that is provided with a drive circuit, and a plurality of light emitting elements that are electrically coupled to the drive circuit, in which a distance between the light emitting elements adjacent to each other is equal to or less than 20 &#x3bc;m in a top view.

Semiconductor module, display apparatus, and semiconductor module manufacturing method

Connection weight coefficients to be used in a neural network computation are stored in a memory array. A word line drive circuit drives a word line corresponding to input data of a neural network. A column selection circuit connects to a computation circuit bit lines to which a connection weight coefficient to be computed is connected. The computation circuit determines the sum of cell currents flowing in the bit lines. A result of the determination made by the computation circuit is stored in an output holding circuit, and is set as an input of a neural network in the next layer, to the word line drive circuit. A control circuit instructs the word line drive circuit and the column selection circuit to select the word line and the bit line to be used in the neural network computation, based on information held in a network configuration information holding circuit.

Neural network computation circuit including semiconductor memory element, and method of operation

A neural network computation circuit includes in-area multiple-word line selection circuits that are provided in one-to-one correspondence to a plurality of word line areas into which a plurality of word lines included in a memory array are logically divided. Each of the in-area multiple-word line selection circuits sets one or more word lines in a selected state or a non-selected state, and includes a first latch and a second latch provided for each word line.

Neural network computation circuit including semiconductor storage elements

A semiconductor module includes a base substrate; a plurality of light emitting elements; a plurality of color conversion layers being in contact with each upper portion of the plurality of light emitting elements adjacent to each other; and a light shielding layer disposed between the plurality of light emitting elements adjacent each other and between the color conversion layers adjacent to each other, and separating the plurality of light emitting elements and a plurality of color conversion layers.

Semiconductor module, display device, and semiconductor module production method

A light source device includes: a driving circuit; a blue light emitting element made of a group III nitride semiconductor which has a light outgoing surface on a side opposite to a side with the driving circuit, is arranged on the driving circuit, and is electrically connected to the driving circuit; and a color conversion layer which is in contact with the light outgoing surface and converts a wavelength of light emitted from the light outgoing surface. The light outgoing surface is made of a group III nitride semiconductor.

Light source device and light emitting device

A variable resistance non-volatile memory device includes a memory cell array including memory cells, a write circuit, and a control circuit. Each memory cell includes a memory element that is a non-volatile and variable-resistance memory element, and a cell transistor. The write circuit includes a source line driver circuit connected to the cell transistor and a bit line driver circuit connected to the memory element. When performing a write operation of changing the memory element to a low resistance state, the control circuit performs control for allowing current having a first current value to flow through the memory element, and subsequently performs control for allowing current having a second current value to flow through the memory element. The second current value is greater than the largest value of overshoot current flowing through the memory element after the start of the changing of the memory element to the low resistance state.

Variable resistance non-volatile memory device

A regulator circuit has a first non-operating state, a second non-operating state, and an operating state. The regulator circuit includes: a detection circuit that detects a magnitude of an output voltage of the regulator circuit, and outputs a feedback voltage that indicates a result of the detection to a feedback node; an operational amplifier circuit that compares the voltage of the feedback node with a reference voltage, and outputs a voltage that indicates a result of the comparison; and an output circuit that generates the output voltage according to the voltage output from the operational amplifier circuit. A state of the feedback node is different between the first non-operating state and the second non-operating state, and a transition time required to switch from the second non-operating state to the operating state is shorter than a transition time required to switch from the first non-operating state to the operating state.

Regulator circuit and semiconductor storage device

A regulator circuit includes: a voltage detection circuit that detects a magnitude of an output voltage of an output node, and outputs a feedback voltage that indicates a result of the detection; an error amplifier circuit that compares the feedback voltage with a reference voltage, and outputs a voltage that indicates a result of the comparison; an output circuit that supplies an output current to the output node according to the voltage output by the error amplifier circuit; a current detection circuit that detects a magnitude of the output current; and a current bias circuit that supplies an output bias current to the output node, and increases or decreases the output bias current based on a result of the detection of the current detection circuit.

Regulator circuit

This invention is related to a therapeutic agent for treating chronic kidney disease comprising a substance which inhibits the enzymatic activity of NNMT or suppresses NNMT gene expression, or a method for screening a therapeutic agent for treating chronic kidney disease which targets the NNMT enzyme or NNMT gene.

Pharmaceutical composition for treating chronic kidney disease

A light-emitting device includes a substrate, a light-emitting element disposed on the substrate, and a sealing member for sealing the light-emitting element. The sealing member contains at least a particulate red phosphor. The red phosphor contains at least a Mn-activated fluoride complex phosphor. The sealing member has an upper surface with irregularities on at least part of the upper surface.

Light-emitting device and method for producing the same

The present invention is related to a method for evaluation of drug efficacy of a medicine having a therapeutic or preventive effect against a disease related to EL activity wherein phosphatidylinositol or lysophosphatidylinositol is used as an indicator. The present invention is also related to a method for screening an inhibitor of EL activity using phosphatidylinositol and a kit for use in the method.

Method for evaluation of drug efficacy of a medicine having a therapeutic or preventive effect against a disease related to EL activity and a method for screening an inhibitor of EL activity

Growing community of inventors

Osaka, Japan

Takashi Ono