Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Kioxia Corporation

Takashi Ohashi

Kazunori Horiguchi

Masayuki Kitamura

Atsushi Kubota

Naomi Fukumaki

Akitsugu Hatazaki

Ryo Suemitsu

Hiroko Tahara

Takuya Ohtsuki

According to one embodiment, a semiconductor manufacturing device according to an embodiment of the present invention includes a chamber; and a stage, wherein the stage comprises: a holding member arranged in the chamber, the holding member having a plurality of convex parts on a surface for mounting a substrate; and a plurality of pins moving up and down in a vertical direction with respect to the holding member, the plurality of lift pins rotating around a rotating shaft parallel to the vertical direction, wherein the plurality of lift pins rotates the substrate around the rotating shaft.

Semiconductor manufacturing device

A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.

Semiconductor device having a stack body including metal films and first insulating films alternately stacked on a semiconductor substrate and including a stepped end portion and manufacturing method thereof

A plasma processing device includes a chamber; a substrate stage that supports a substrate inside the chamber; a plasma generator that generates plasma by which the substrate is processed in a space above the substrate inside the chamber; and an electromagnet. The electromagnet is provided in each of a plurality of regions, which are provided on a top of the chamber in an upper part thereof, so as to be independently movable. The plasma processing device further includes a controller configured to move the electromagnet to produce a uniform plasma density onto the substrate.

Plasma processing device and semiconductor device production method

In one embodiment, a semiconductor manufacturing apparatus includes a treatment chamber configured to treat a substrate with plasma, a first annular coil configured to generate a first magnetic field to be applied to the plasma, and a second annular coil configured to generate a second magnetic field to be applied to the plasma. The apparatus further includes a first electric current supplying module configured to supply, to the first annular coil, a first electric current flowing in a first direction, and cause the first annular coil to generate the first magnetic field. The apparatus further includes a second electric current supplying module configured to supply, to the second annular coil, a second electric current flowing in a second direction that is different from the first direction, and cause the second annular coil to generate the second magnetic field.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

A plasma processing device includes a stage, a cluster generation machine, and a plasma generation machine. The stage is disposed in a processing chamber. The stage may support a substrate. The cluster generation machine generates cluster gas by clustering process gas. The plasma generation machine generates plasma of at least one of the process gas and the cluster gas in the processing chamber. The plasma generation machine processes the substrate using the generated plasma.

Plasma processing device

A semiconductor device according to the present embodiment is provided with a lower layer. A first film is provided on the lower layer. A first side-wall film covers a contact hole provided in the first film, along a side wall in the contact hole and from a lower end of the contact hole to an upper end of the contact hole. A second side-wall film is provided on the side wall in the contact hole via the first side-wall film, to cover the contact hole from a position higher than a lower end of the first side-wall film to the upper end of the contact hole. A conductor is provided inside the first and second side-wall films in the contact hole. An upper layer is provided on the first film.

Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor memory device includes disposing a first stacked body on a substrate, forming a first through via hole in the first stacked body, and determining to remove an upper portion of the first stacked body based on a comparison of a determined value of a width of the first through via hole with a reference value. The method further includes forming a second film in the first through via hole responsive to the determination to remove the upper portion of the first stacked body, removing the upper portion of the first stacked body and a portion of the second film, and disposing a second stacked body on the first stacked body and the second film. The method further includes forming a second through via hole to expose at least a portion of the second film, and removing the second film in the first through via hole.

Manufacturing method of semiconductor memory device

A pattern forming method including: (a) forming a porous layer above an etching target layer; (b) forming an organic material with a transferred pattern on the porous layer; (c) forming, by use of the transferred pattern, a processed pattern in a transfer oxide film that is more resistant to etching than the porous layer; and (d) transferring the processed pattern to the etching target layer by use of the transfer oxide film as a mask.

Pattern forming method

A semiconductor manufacturing apparatus according to an embodiment includes a reactor, a mover, and a controller. The reactor houses an outer edge portion of a semiconductor substrate in inside thereof through a gap portion and scrapes the outer edge portion. The mover moves at least either the semiconductor substrate or end faces of the gap portion in a thickness direction of the semiconductor substrate to change distances in the thickness direction between the semiconductor substrate and the end faces of the gap portion. The controller controls a movement amount in the thickness direction of at least either the semiconductor substrate or the end faces of the gap portion according to a warp amount of the outer edge portion in the thickness direction.

Semiconductor manufacturing apparatus and semiconductor manufacturing method

According to one embodiment, a manufacturing method of a semiconductor device comprises forming a first pattern and a second pattern to be placed apart on a semiconductor substrate; and forming an arch pattern in which the tops of the first pattern and of the second pattern touch by making the first pattern and the second pattern bend in directions in which they face each other.

Semiconductor device, and manufacturing method of semiconductor device

A method for forming a pattern according to an embodiment, includes forming above a first film film patterns of a second film; forming film patterns of the first film by etching the first film using the film patterns of the second film as a mask; converting the film patterns of the second film into film patterns whose width are narrower than the film patterns of the first film by performing a slimming process; forming film patterns of a third film on both sidewalls of the film patterns of the first film and the film patterns of the second film after the slimming process; and etching the first film using the film patterns of the third film as a mask after the film patterns of the second film being removed.

Growing community of inventors

Yokkaichi, Japan

Takashi Ohashi