Canon Kabushiki Kaisha

Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Matsushita Electric Industrial Co., Ltd.

Renesas Electronics Corporation

Nec Corporation

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Other

X Development LLC

Tokuyama Corporation

Sanyo Semiconductor Co., Ltd.

Renesas Electronic Coporation

Takashi Ogura

Osamu Tsujii

Masahiko Okunuki

Hiroyuki Okuda

Kazuo Ino

Satoshi Shimizu

Yoshiaki Shimizu

Makoto Sato

Toshio Kameshima

Noriyuki Kaifu

Isao Kobayashi

Hideki Nonaka

Yutaka Endo

Kousaku Murata

Masanori Hongo

Takashi Hiroshima

Toshimitsu Taniguchi

Natsuyo Nagano

Peter Austin Burke

Kousou Ishihara

Jun Murata

Shinichi Watanuki

Jyoichi Tamada

Hideki Hayashi

Toshikazu Tamura

Isao Tanaka

Hisashi Namba

Akira Hirai

Keiichi Kawasaki

Tomoo Nakayama

Teruhiro Kuwajima

Masashige Moritoki

Toshio Tanuma

Takamasa Itou

Fumio Kameoka

Takao Yamano

Futoshi Komatsu

Masami Fukuyama

Toru Mogami

Shigeaki Shimizu

Hideki Ito

Naotaka Hatao

Tsukasa Shimizu

Kouzo Ishihara

Satoshi Kondo

Kazuhiro Watanabe

Takayuki Nagata

Tatsuya Usami

Koichi Kusukame

Dean E Probst

Junji Momoda

Keiji Sakamoto

Aki Yoneda

Yoshihiro Miyazawa

Masahiko Ishida

Hiroyuki Tokuda

Ko Mizuno

Wataru Kaku

Junichi Fujita

Minoru Kume

Yusuke Hokari

Fumio Tatezono

Satoshi Kodama

Naoto Matono

Yukinori Ochiai

Junichi Yamayoshi

Katsumi Umeda

Mitsuru Soma

Noriaki Oguri

Hitomi Ogasawara

Kosaku Murata

Masako Ikeda

Satoshi Itou

Koso Ishihara

Shohei Kawagoe

Shotaro Kudo

Hiroyuki Okuaki

Shigehiro Horimoto

Shuuichirou Ueno

Horiyuki Okuda

Takashi Yanai

Tsutomu Himukai

Tatsuhiko Tokuda

Eiji Oshima

Hiroyuki Nishikiori

In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.

Method for forming transistor devices having source region segments and body region segments

Transistor device having a source region segments and body region segments

An acoustic lens includes: a plurality of fins each having one end portion located on a side opposite to the loudspeaker on a support surface that extends as convexly curved along a predetermined direction when the acoustic lens is viewed from a lateral side, the plurality of fins being arranged in the predetermined direction at substantially equal intervals and substantially in parallel to one another. When the acoustic lens is viewed from the lateral side, the plurality of fins are substantially identical in length, and an elevation angle of the support surface relative to each of the plurality of fins gradually increases from one side to an other side in the predetermined direction.

Acoustic lens and speaker system

A Semiconductor device includes an insulating layer, an optical waveguide, a first dummy semiconductor film, a second semiconductor film and a third semiconductor film. The optical waveguide is formed on the insulating layer. The first dummy semiconductor film is formed on the insulating layer and is spaced apart from the optical waveguide. The first dummy semiconductor film is formed on the first semiconductor film. The second semiconductor film is integrally formed with the optical waveguide as a single member on the insulating layer. The third semiconductor film is formed on the second semiconductor film. A material of the first dummy semiconductor film is different from a material of the optical waveguide. In plan view, a distance between the optical waveguide and the first dummy semiconductor film in a first direction perpendicular to an extending direction of the optical waveguide is greater than a thickness of the insulating layer.

Semiconductor device and method of manufacturing the same

In a general aspect, a trench-gate field-effect transistor can include an active region and a termination region. The termination region can include a structure where a portion in which formation of a PN junction is prevented (e.g., a termination extension and one or more semiconductor mesas) is overlapped with a portion of the trench-FET that includes a boundary (edge, etc.) between trenches (or portions of trenches) lined with only shield (thick oxide) and trenches lined with a stepped-shield dielectric (SSO) structure (e.g., shield dielectric and gate dielectric). That boundary can be referred to an SSO edge. Prevention of PN junction formation (e.g., during a channel and/or body implant for the trench-FET), in the disclosed approaches, can be accomplished using a polysilicon layer to block formation of, e.g., a p-type layer, in a semiconductor substrate (e.g., an n-type semiconductor region, epitaxial layer, etc.).

Termination structures for trench-gate field-effect transistors

In at least one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode, and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench, and a source region of a first conductivity type disposed in a top portion of the mesa region. The apparatus includes a plurality of body region segments of a second conductivity type disposed in the side of the mesa region. The plurality of body region segments define an alternating pattern with the plurality of source region segments along the side of the mesa region.

Acoustic lens includes a plurality of fins arranged at a predetermined interval. At least one fin among the plurality of fins includes: first notch portion provided on a front side of a path of a sound; and second notch portion provided on a rear side of the path of the sound. Second notch portion has a shape corresponding to a shape of a diaphragm of a speaker disposed in proximity to the fin.

In order to improve the performance of a semiconductor device, a semiconductor layer EP is formed over a p-type semiconductor PR. An n-type semiconductor layer NRis formed over the semiconductor layer EP. The semiconductor layer PR, the semiconductor layer EP, and the semiconductor layer NRrespectively configure part of a photoreceiver. A cap layer of a material different from that of the semiconductor layer EP is formed over the semiconductor layer EP, and a silicide layer, which is a reaction product of a metal and the material included in the cap layer, is formed within the cap layer. A plug having a barrier metal film BMis formed over the cap layer through the silicide layer. Here, a reaction product of the metal and the material included in the semiconductor layer NRis not formed within the semiconductor layer NR

Semiconductor device and manufacturing method thereof

In at least one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode, and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench, and a source region of a first conductivity type disposed in a top portion of the mesa region. The apparatus can include an epitaxial layer of the first conductivity type, and a body region of a second conductivity type disposed in the mesa region and disposed between the source region and the epitaxial layer of the first conductivity type. The apparatus can include a pillar of the second conductivity type disposed in the mesa region such that a first portion of the source region is disposed lateral to the pillar and a second portion of the source region is disposed above the pillar.

Transistor device having a pillar structure

Germanium (Ge) contamination to a semiconductor manufacturing apparatus is suppressed. Germanium is a dissimilar material in a silicon semiconductor process. A semiconductor device is provided with a Ge photodiode including an n-type germanium layer, and a plug capacitively coupled to the n-type germanium layer. In other words, the n-type germanium layer of the Ge photodiode and the plug are not in direct contact with each other but are capacitively coupled to each other.

Germanium photodiode

An example method for stabilizing images involves obtaining an image of an environment from a perspective of the robot. The method also involves receiving one or more depth measurements. The depth measurements correspond to locations within the image. The method further involves determining first boundaries around a particular location within a section of the image. The particular location is approximately centered within the first boundaries. Additionally, the method involves determining an extent of deviation of a particular position of the image capture device from a reference position. The particular position is a position of the image capture device at a point in time at which the image was captured. Further, the method involves determining second boundaries by shifting the first boundaries by an amount proportional to the determined extent of deviation. The method additionally involves providing, to a display device, a portion of the image defined by the second boundaries.

Stabilization of captured images for a robot

The exposure apparatus includes a first detector, a first alignment unit, a second detector, and a second alignment unit, and a controller, wherein the controller controls the second alignment unit so that alignment of a substrate is conducted based on a detection result from detection of the mark by the second detector in a first view when alignment of the substrate can be conducted by the first alignment unit at a prescribed alignment accuracy, and controls the second alignment unit so that alignment of the substrate is conducted based on a detection result from detection of the mark by the second detector in a second view that is wider than the first view when alignment of the substrate cannot be conducted by the first alignment unit at the prescribed alignment accuracy.

Exposure apparatus, alignment method, and device manufacturing method

A conductor provided in an interconnection layer is allowed to have a low resistance. An insulator film is provided over a substrate, and is comprised of SiON(where x&#x3e;0.5 in an XRD analysis result). An interconnection is provided over the insulator film, and includes a first layer and a second layer. The first layer includes at least one of TiN, TaN, WN, and RuN. The second layer is provided over the first layer, and is formed of a material having a resistance lower than the first layer, for example, W.

Semiconductor device

Stabilization of captured images for teleoperated walking biped robots

Growing community of inventors

Osaka, Japan

Takashi Ogura