Kabushiki Kaisha Toshiba

Takashi O

Osamu Yamazaki

Masaki Narita

Yukimasa Yoshida

Hiroshi Fujita

Isao Matsui

Katsuaki Aoki

Toshimitsu Omine

Akio Ui

Naruhiko Kaji

Yukio Nishiyama

Hirotaka Ogihara

There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner rim of the ring main body being formed higher than its outside portion.

Film forming ring and method of manufacturing semiconductor device

There is provided a semiconductor device manufacturing method that comprises a first step of loading a processed substrate in a reaction chamber, a second step of introducing a reaction gas into the reaction chamber at a predetermined flow rate, a third step of maintaining an interior of the reaction chamber at a predetermined pressure, a fourth step of starting generation of plasma by supplying a high frequency power to an electrode arranged in the reaction chamber, a fifth step of applying a predetermined process to the processed substrate, and a sixth step of stopping generation of the plasma by stopping supply of the high frequency power after the predetermined process is completed, wherein the reaction gas is introduced continuously when the generation of the plasma is stopped.

Semiconductor device manufacturing method

A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.

Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system

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Yokohama, Japan

Takashi O