Mitsubishi Materials Corporation

Stmicroelectronics(tours) Sas

Stmicroelectronics (rousset) Sas

Takashi Noguchi

Hideaki Sakurai

Nobuyuki Soyama

Jun Fujii

Toshihiro Doi

Toshiaki Watanabe

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbLa)(ZrTi)O[wherein 0.9&#x3c;x&#x3c;1.3, 0&#x2266;y&#x3c;0.1, and 0&#x2266;z&#x3c;0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CHCOOH [wherein 3&#x2266;n&#x2266;7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).

Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof

A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film.

PZT-based ferroelectric thin film and method of forming the same

A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, having an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation is controlled in a (111) plane preferentially in a range of 45 nm to 270 nm, and a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation as the crystal orientation of the orientation controlling layer, in which an interface is formed between the orientation controlling layer and the film thickness adjusting layer.

PZT-based ferroelectric thin film and method of manufacturing the same

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbLa)(ZrTi)O[wherein 0.9 &#x3c;&#xd7;&#x3c;1.3, 0&#x2266;y&#x3c;0.1, and 0&#x2266;z&#x3c;0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CHCOOH [wherein 3&#x2266;n&#x2266;7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).

Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbLa)(ZrTi)O[wherein 0.9&#x3c;x&#x3c;1.3, 0&#x2266;y&#x2266;0.1, and 0&#x2266;z&#x2266;0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CHCOOH [wherein 3&#x2266;n&#x2266;7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).

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Naka, Japan

Takashi Noguchi