Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electric Co., Ltd.

Takashi Nishikawa

Masataka Ozeki

Satoshi Kamiyama

Yoichi Sasai

Akinari Nakamura

Takashi Ohtsuka

Hideo Ohara

Tohru Saitoh

Ryoko Miyanaga

Kenji Iijima

Shigeo Yoshii

Shigeki Yasuda

Nobuyuki Uemura

Yoshikazu Tanaka

Makoto Kitabatake

Kiyoyuki Morita

Minoru Kubo

Michihito Ueda

Kenji Toyoda

Masao Yoshikawa

Mitsuyoshi Nakamoto

Shoji Miyake

Yoshikazu Matsuda

Kenkichi Hashido

Mitsuharu Tomioka

Hiroshi Ishihara

Akio Taki

Masayuki Nanba

Satoru Nitta

Hideharu Sano

Hirohisa Kato

A fuel cell system of the present invention includes a fuel cell (); a water passage (); an electric heater () configured to heat the water passage; a water-related temperature detector (); a first abnormality detector (, etc.) configured to detect first abnormalities; a second abnormality detector (, etc.) configured to detect second abnormalities; and a controller (), and the controller is configured to stop an operation of the fuel cell system when the first abnormality is detected by the first abnormality detector or when the second abnormality is detected by the second abnormality detector. In a case where the fuel cell system stops since the second abnormality is detected by the second abnormality detector, the controller causes the electric heater () to carry out an operation as an antifreezing operation when the water-related temperature detector detects a temperature that is not more than a predetermined threshold. In a case where the fuel cell system stops since the first abnormality is detected by the first abnormality detector, the controller does not cause the electric heater () to carry out the operation as the antifreezing operation even when the water-related temperature detector detects the temperature that is not more than the predetermined threshold.

Fuel cell system

A fuel cell system of the present invention comprises a fuel cell (), a load value detecting means () configured to detect a load value of a load of electric power or heat which is generated by equipment () supplied with the electric power or the heat from the fuel cell system, a load value storage means () configured to store a history of the load value which is detected by the load value detecting means (), a load value predicting means () configured to predict a load value which is going to be generated, based on the history of the load value, and to store the predicted load value as load value data, and scheduled start-up time of a fuel cell () is decided based on the load value data.

A fuel cell system includes a fuel cell configured to generate power by consuming a fuel gas and having an outlet port through which the fuel gas flows out; a moisture removal unit configured to remove moisture contained in the fuel gas that has been sent through the outlet port; a burner located downstream of the moisture removal unit to combust the fuel gas; and a gas pipe on-off valve configured to open and close a pipe that makes the moisture removal unit and the burner communicate with each other, and the fuel cell system is designed such that the gas pipe on-off valve closes when the power generation stops.

A power generation system () of the present invention comprises a power generation portion () configured to generate power, a load power detecting means () configured to detect a load power supplied from a power source including the power generation portion to a load, an operation stop determination means () configured to stop a power generation operation of the power generation portion based on the load power detected by the load power detecting means and a stop condition; and a stop condition setting means () configured to set the stop condition, wherein the stop condition setting means sets different stop conditions in a plurality of time periods, and wherein the operation stop determination means stops the power generation operation of the power generation portion based on each of the different stop conditions set by the stop condition setting means and the load power detected by the load power detecting means.

Power generation system

This specification relates to a semiconductor device that comprises a semiconductor substrate, a source regionand a drain region, which are formed on the semiconductor substratewith a channel regiontherebetween; a floating gate electrodethat is formed on the channel regionwith a gate insulator filmtherebetween; a ferroelectric filmthat is formed on the floating gate electrode; and a control gate electrodethat is formed on the ferroelectric film, wherein intermediate insulator filmsandare formed between at least one of the pairs consisting of the floating gate electrodeand the ferroelectric film, and the ferroelectric filmand the control gate electrode, and the intermediate insulator filmsandare made of hafnium oxide that contains nitrogen atoms.

Semiconductor device

A silicon oxide film, a Pt film, a Ti filmand a PZT filmare deposited in this order over a Si substrate. The Si substrateis placed in a chamberso that the PZT filmis irradiated with an EHF wave. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate

Semiconductor device and method for fabricating the same

The present invention provides a method of driving a nonvolatile flip-flop circuit comprising the following steps of: a data hold step of holding an input data signal D utilizing polarization of a ferroelectric material of a ferroelectric gate transistor () when the data signal D is input while a first clocked inverter (), a second clocked inverter (), and a third switching element () are turned on and a first switching element (), a second switching element (), and a third clocked inverter () are turned off; and a data output step of outputting an output signal Q (&#x2212;Q) based on the held data signal D placing the first clocked inverter (), the second clocked inverter (), and the third switching element () in the OFF state and placing the first switching element (), the second switching element (), and the third clocked inverter () in the ON state so as to interrupt an input of a data signal and maintain a polarization state of the ferroelectric material of the ferroelectric gate transistor ().

Nonvolatile flip-flop circuit and method of driving the same

After an underlying layer, made of a single crystal metal material, has been formed on a semiconductor layer, part or all of the underlying layer is changed into a metal oxide layer by supplying oxygen thereto from above the underlying layer. Then, a ferroelectric or high-dielectric-constant film is further formed on the metal oxide layer. Since the film made of a metal material is formed on the semiconductor layer, a silicon dioxide film or the like is not formed easily. Thus, a dielectric film, which includes an underlying layer with a high dielectric constant and has a large capacitance per unit area, can be obtained. Various defects such as interface states in the semiconductor layer can also be reduced advantageously if these process steps are performed after a thermal oxide film has been formed on the semiconductor layer.

Dielectric film and method for forming the same

As a pretreatment of a substrate, a substrate of Si having the (111) surface orientation as a main surface is soaked in hydrofluoric acid, so as to form a H atomic layer for terminating dangling bonds on the main surface of the substrate. Then, the substrate is placed in a highly evacuated growth chamber in an MBE system, and a Ga molecular beam and a Se molecular beam are supplied onto the H atomic layer on the substrate, so as to grow a buffer layer of GaSe, that is, a van der Waals crystal. Next, with the supply of the Se molecular beam stopped, a N,gas activated by using radio frequency or electron cyclotron resonance is supplied instead as a nitrogen source onto the buffer layer on the substrate, so as to form a semiconductor layer of GaN.

Growth of GaN on Si substrate using GaSe buffer layer

The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.

Light-emitting diode device

On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.

Low barrier ohmic contact for semiconductor light emitting device

The invention is intended to suppress oscillatory combustion of a combustion apparatus. In the invention, acoustic closed ends are provided at an inlet side and an outlet side of the burner port unit, and the combustion apparatus is constituted so that the flame may be positioned between these closed ends, and a buffer chamber is provided at the inlet side. Thus, when the inlet side and outlet side of the burner port unit of the combustion apparatus are formed as acoustic closed ends, oscillatory combustion occurs easily. At this time, when the intake tube communicates at the upstream side of the inlet side closed end, and an exhaust tube communicates at the downstream side of the outlet side closed end, if the length of the intake tube and exhaust tube is changed, the air ratio and combustion amount for generating oscillatory combustion remain constant, and the oscillation frequency and oscillation pressure remain constant. In such condition, when a sound absorbing unit is provided in the buffer chamber, oscillation does not occur, and if the intake tube or exhaust tube is extended, oscillation does not occur.

Combustion apparatus

A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers.

Semiconductor laser and production method thereof

A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x&lt;1, 0.ltoreq.y&lt;1) and a quantum well layer made of Zn.sub.1-z Cd.sub.z Se (0.ltoreq.z&lt;1) which is interposed between the first and the second light guiding layers, the light-emitting layer being interposed between the first and the second cladding layers; and a burying layer which is made of ZnMgSSe lattice-matching with the semiconductor substrate and formed on sides of the second cladding layer.

Growing community of inventors

Nara, Japan

Takashi Nishikawa