Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Holdings Corporation

Takashi Nishihara

Rie Kojima

Noboru Yamada

Akio Tsuchino

Yuji Zenitani

Hideo Kusada

Yoshitaka Sakaue

Tetsuya Asano

Kenichi Nishiuchi

Naoyasu Miyagawa

Haruhiko Habuta

Ken'ichi Nagata

Hideki Kitaura

Akihiro Itou

Yukako Doi

Fumitomo Yamasaki

Kenji Narumi

Shinya Fujimura

Tetsuya Akiyama

Joji Anzai

Hiroki Takeuchi

Tomoyuki Komori

Naohiro Kimura

Takayuki Negami

Takeshi Sakaguchi

Taisuke Matsui

Teruaki Yamamoto

Tomoyasu Takaoka

Takeyuki Sekimoto

Toshiyuki Matsunaga

Katsuyuki Takahashi

Saifullah Badar

Ryusuke Uchida

Tosiyuki Matunaga

The solar cell of the present disclosure includes a first electrode, a photoelectric conversion layer, an intermediate layer, a hole transport layer, and a second electrode in this order, wherein the hole transport layer includes a hole transport material and an oxidant, the photoelectric conversion layer includes a perovskite compound containing iodine, and the intermediate layer includes at least one selected from the group consisting of bromide, chloride, and fluoride.

Solar cell

A solar cell includes: a first electrode; a first hole transport layer containing nickel; an inorganic material layer containing titanium; a light-absorbing layer converting light into electric charge; and a second electrode. The first electrode, the first hole transport layer, the inorganic material layer, the light-absorbing layer, and the second electrode are layered in that order. The light-absorbing layer contains a perovskite compound represented by a formula AMX3, where A is a monovalent cation, M is a divalent cation, and X is a monovalent anion.

Solar cell and solar cell module

An exemplary proton conductor according to the present disclosure has a perovskite-type crystal structure expressed by the compositional formula ABB'O, where A is at least one selected from among group 2 elements; B is a group 4 element or Ce; B&#x2032; is a group 3 element, a group 13 element, or a lanthanoid element; 0.5&#x3c;a&#x2264;1.0, 0.0&#x2264;x&#x2264;0.5, and 0.0&#x2264;&#x3b4;&#x3c;3; and the charge of the above compositional formula is deviated from electrical neutrality in a range of &#x2212;0.13 or more but less than +0.14.

Proton conductor

An exemplary dehydrogenation device for generating a hydrogen gas through dehydrogenation according to the present disclosure comprises an anode containing a dehydrogenation catalyst, a cathode containing catalyst capable of reducing protons, and a proton conductor disposed between the anode and the cathode. The proton conductor has a perovskite crystal structure expressed by the compositional formula ABB'O. The A element is an alkaline-earth metal and is contained in a range of 0.4&#x3c;a&#x3c;0.9, where the a value represents a mole fraction of this element, and the B&#x2032; element is a trivalent group 3 or group 13 element and is contained in a range of 0.2&#x3c;x&#x3c;0.6, where the x value represents a mole fraction of this element.

Dehydrogenation device

An exemplary proton conductor according to the present disclosure has a perovskite-type crystal structure expressed by the compositional formula ABB'O, where A is at least one selected from among group 2 elements; B is a group 4 element or Ce; B&#x2032; is a group 3 element, a group 13 element, or a lanthanoid element; 0.5&#x3c;a&#x2266;1.0, 0.0&#x2266;x&#x2266;0.5, and 0.0&#x2266;&#x3b4;&#x3c;3; and the charge of the above compositional formula is deviated from electrical neutrality in a range of &#x2212;0.13 or more but less than +0.14.

A proton conductor includes an electrolytic layer having first and second main surfaces; and a plurality of catalyst particles. The first main surface of the electrolytic layer includes a flat portion and a plurality of recessed portions. The plurality of catalyst particles are respectively located in the plurality of recessed portions. The flat portion of the first main surface and parts of surfaces of the plurality of catalyst particles exposed from the plurality of recessed portions form a third main surface. The electrolytic layer is formed of a single crystal of a perovskite-type oxide having a proton conductivity. The catalyst particles are formed of a single crystal of a noble metal material. The perovskite-type oxide of the electrolytic layer) has a crystal orientation that matches a crystal orientation of the noble metal material of the plurality of catalyst particles.

Proton conductor and proton conductor device

An exemplary organic hydride conversion device for generating a hydrogen gas through organic hydride conversion according to the present disclosure comprises an anode containing a dehydrogenation catalyst, a cathode containing hydrogenation catalyst, and a proton conductor disposed between the anode and the cathode. The proton conductor has a perovskite crystal structure expressed by the compositional formula ABB'O. The A element is an alkaline-earth metal and is contained in a range of 0.4&#x3c;a&#x3c;0.9, where the a value represents a mole fraction of this element, and the B&#x2032; element is a trivalent group 3 or group 13 element and is contained in a range of 0.2&#x3c;x&#x3c;0.6, where the x value represents a mole fraction of this element.

Organic hydride conversion device

An exemplary proton conductor according to the present disclosure has a perovskite-type crystal structure expressed by the compositional formula ABB'O. The A element is an alkaline-earth metal and is contained in a range of 0.4&#x3c;a&#x3c;0.9, where the a value represents a mole fraction of this element, and the B&#x2032; element is a trivalent group 3 or group 13 element and is contained in a range of 0.2&#x3c;x&#x3c;0.6, where the x value represents a mole fraction of this element.

An information recording medium including three or more information layers, wherein: at least one information layer includes a recording layer and a nucleation layer; the recording layer contains a material that is represented by formula (1) [(GeTe)(InTe)]Sb(mol %) with x satisfying 0.8&#x2266;x&#x3c;1.0 and y satisfying 95&#x2266;y&#x3c;100; the nucleation layer contains a material that is represented by formula (2) (GeTe)(BiTe)(mol %) with z satisfying 10&#x2266;z&#x2266;71; and the nucleation layer is in contact with the recording layer. This information recording medium is capable of achieving sufficient signal amplitude even in cases where a small recording mark is formed, and is also capable of stably maintaining a small recording mark.

Information recording medium and method for producing same

An optical information recording medium including three or more information layers, wherein at least one information layer provided on the light incident side is an information layer which enables information to be overwritten and includes a recording film, a transmittance adjusting film of a dielectric containing Bi, Ti and O, and an isolation film in this order from a light incident side; and the isolation film is provided between and adjacent to the transmittance adjusting film and an intermediate separation layer which separate the information layer from another information layer on the side opposite to the light incident side; and the isolation film has an optical constant at a wavelength of 405 nm such that a refractive index is 1.8 or less and an extinction coefficient is 0.05 or less. This information recording medium prevents the repeated overwriting characteristics in a sever environment from being deteriorated.

Information recording medium and method for manufacturing the same

An optical information recording medium of the present invention includes at least a recording layer () that allows information to be recorded thereon and/or reproduced therefrom by being irradiated with a laser beam, and a transmittance adjusting layer () in this order from an incident side of the laser beam (). In the optical information recording medium of the present invention, the transmittance adjusting layer () contains Bi, Ti, and O and with a composition of Bi, Ti, and O contained in the transmittance adjusting layer () being denoted as BiTiO, in atomic number ratio, x, y, and z satisfy 0.07&#x2266;x&#x2266;0.35, 0.07&#x2266;y&#x2266;0.28, 0.56&#x2266;z&#x2266;0.70, and x+y+z=1. Or the transmittance adjusting layer () contains BiOand TiO, and with a composition of BiOand TiOcontained in the transmittance adjusting layer () being denoted as (BiO)(TiO), in molar ratio, &#x3b1; and &#x3b2; satisfy 0.2&#x2266;&#x3b1;&#x2266;0.7, 0.3&#x2266;&#x3b2;&#x2266;0.8, and &#x3b1;+&#x3b2;=1.

Optical information recording medium and method for manufacturing the same

An information recording medium () of the present invention is an information recording medium with respect to which information can be recorded or reproduced by irradiation with an optical beam (). The information recording medium () includes a second interface layer (), a recording layer () and a first interface layer () in this order from the optical beam () incident side. The first interface layer () and the second interface layer () are disposed in contact with the recording layer (). The second interface layer () contains M1 (where M1 is at least one element selected from Nb, Y, Dy, Ti, Si and Al), Cr and oxygen (O). The first interface layer () contains M2 (where M2 is at least one element selected from Nb, Y, Dy, Ti, Si, Al, Zr and Hf), Cr and oxygen (O). The first interface layer () and the second interface layer () each contain Cr in a range of 50 mol % or less in terms of the oxide (CrO).

Information recording medium

An optical information recording medium () of the present invention includes an information layer () that allows information to be recorded thereon and reproduced therefrom by irradiation with a laser beam (). The information layer () includes a reflective layer (), a first dielectric layer (), a recording layer () capable of undergoing a phase change by the irradiation with the laser beam () and a second dielectric layer () formed in this order from a side opposite to a laser beam incident side. The recording layer () contains Ge, Sb and Te. When Ge, Sb and Te contained in the recording layer () are represented by GeSbTein atomic number ratio, x, y, and z satisfy 0.39&#x2266;x&#x2266;0.48, 0.02&#x2266;y&#x3c;0.11, 0.40&#x2266;z&#x3c;0.56, and x+y+z=1. The recording layer () has a thickness of at least 10 nm but not more than 15 nm. In the case where a ratio of an amount of reflected light of the laser beam () from the information layer () to an amount of the laser beam () incident on the information layer () is denoted as R (%), the R when the recording layer () is in a crystalline state is denoted as Rc (%), and the R when the recording layer () is in an amorphous state is denoted as Ra (%), Rc and Ra satisfy 6.0&#x2266;Rc/Ra&#x2266;12.0 and 1.0&#x2266;Rc&#x2266;3.0.

Optical information recording medium and recording/reproducing method therefor

The information recording medium () of the present invention includes a recording film (). The information recording medium () allows information to be recorded and reproduced on and from the information recording medium by irradiation of the recording film () with a laser beam (). The information recording medium () of the present invention further includes a mixed dielectric film (the second dielectric film) disposed on the laser beam () incident side with respect to the recording film (). The mixed dielectric film contains a mixed dielectric material consisting of Zn sulfide, Si oxide and an oxide X (where the oxide X is an oxide of at least one element selected from Ti, Nb, Ta and Ce).

Information recording medium and method for producing the same

In an information recording medium that has an information layer which includes a recording layer capable of undergoing phase transition, the recording layer is formed from a material that contains Sb and S, and has composition represented by the formula (1): SbS(atomic %) where suffix x represents the proportion in atomic % that satisfies a relationship of 50&#x2266;x&#x2266;98.

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Osaka, Japan

Takashi Nishihara