Renesas Technology Corp.

Takashi Nishiguchi

Hirofumi Tsuchiyama

Hisahiko Abe

Masaki Hiyama

Shinichi Nakabayshi

In order to reduce micro scratches which tend to occur during chemical-mechanical polishing, a polishing slurry is diluted with deionized water immediately before it is supplied in a gap between a polishing pad and the surface of a wafer to be polished. By diluting the polishing slurry with deionized water to increase its volume, the concentration of coagulated particles contained in the polishing slurry can be lowered. For a mixture ratio of the polishing slurry and deionized water, about 1 (polishing slurry): 1&#x2013;1.2 (deionized water) is used, and the concentration of silica contained in the diluted polishing slurry is adjusted to about 3&#x2013;9 weight %, preferably about 4&#x2013;8 weight %, and more preferably about 8 weight %.

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Hitachinaka, Japan

Takashi Nishiguchi