Tokyo Electron Limited

Takashi Nakazawa

Kazuyoshi Shinohara

Keigo Satake

Hiroki Sakurai

Isamu Miyamoto

Kenji Nakamizo

Yuichi Douki

Takahisa Otsuka

Yusuke Hashimoto

Daisuke Goto

Hiroyuki Higashi

Yusuke Takamatsu

Seiya Fujimoto

Taisei Inoue

A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

Substrate processing method

A substrate processing apparatus includes: a temperature raising part for raising a temperature of a first sulfuric acid; a mixing part for mixing the first sulfuric acid where the temperature is raised by the temperature raising part with a moisture-containing liquid to generate a mixed solution; and a discharging part for discharging the mixed solution onto a substrate inside a substrate processing part. The mixing part includes: a joining portion where a sulfuric acid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part flows and a liquid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part and the moisture-containing liquid flows are joined; and a reaction suppression mechanism for suppressing a reaction between the first sulfuric acid and the moisture-containing liquid in the joining portion.

Substrate processing apparatus

Substrate processing method and substrate processing apparatus

A substrate processing apparatus includes a temperature detector, a calculation unit and an execution unit. The temperature detector is configured to detect a temperature of a substrate on which a processing liquid is discharged. The calculation unit is configured to calculate, by using a given calculation formula, an etching amount of the substrate based on the temperature detected by the temperature detector. The execution unit configured to perform an etching processing on the substrate by the processing liquid based on the etching amount.

Substrate processing apparatus and substrate processing method

A substrate processing method includes: holding a substrate having a processing target surface and an opposite surface which is opposite to the processing target surface; preheating a center portion of the opposite surface of the substrate; after the preheating, ejecting a sulfuric acid hydrogen peroxide mixture (SPM) to a peripheral edge portion of the processing target surface of the substrate; and after the ejecting, moving an ejection position of the SPM from the peripheral edge portion of the processing target surface to a center portion of the substrate.

The substrate processing method according to an exemplary embodiment includes a low temperature dissolving processing and an etching processing. The low temperature dissolving processing dissolves oxygen in an alkaline aqueous solution cooled to a predetermined temperature lower than the room temperature. The etching processing etches a substrate by supplying the alkaline aqueous solution in which oxygen is dissolved to the substrate.

Growing community of inventors

Kumamoto, Japan

Takashi Nakazawa