Rohm Co., Ltd.

Kyoto University

Ishihara Sangyo Kaisha, Ltd.

Nissan Motor Company Limited

Kyocera Corporation

Japan Science and Technology Agency

Nippon Electric Glass Co., Ltd.

Chubu University Educational Foundation

Bmg Inc.

Nishimura Seisakustto Co., Ltd.

Rhohm Co., Ltd

Takashi Nakamura

Yoshikazu Fujimori

Hidemi Takasu

Heiji Watanabe

Hiromitsu Kimura

Takayoshi Shimura

Takuji Hosoi

Takahiro Hanyu

Hironobu Nakao

Takehiro Shibuya

Yuji Okamura

Tatsuya Kiriyama

Shingo Ohta

Michitaka Kameyama

Yuki Nakano

Ryota Nakamura

Yuichi Nakao

Koji Goto

Shuhei Mitani

Tokuo Suita

Hirokazu Asahara

Yoshimichi Ueda

Hiroaki Nishii

Tetsuya Hayashi

Hideaki Tanaka

Ken Nakahara

Haruo Tanaka

Masatoshi Aketa

Yoshio Shimoida

Masakatsu Hoshi

Shigeharu Yamagami

Kenji Yamamoto

Mineo Miura

Shuji Azumo

Noriaki Kawamoto

Masayuki Kyomoto

Yusaku Kashiwagi

Takayuki Kitou

Tadashi Kokubo

Satoru Yoshihara

Takao Yamamuro

Seiji Yamaguchi

Masashi Imamura

Hirokazu Kano

Hiroshi Kimura

Makoto Kondo

Masakazu Kawashita

Masayuki Hatanaka

Morihiro Ito

Hiroshi Tochimura

Keiichi Kawanabe

Suonghyu Hyon

A highly safe and inexpensive bone repair material that stably exhibits high antibacterial activity for a long time in a living body by supporting a large amount of an iodine ion and is excellent in apatite forming ability and preservability. The material includes a substrate made of titanium or titanium alloy and a titanate film on a surface of the substrate, the film composed of a large number of crystalline masses having a crystal structure and containing a calcium ion and an iodine ion, wherein the mass contains layers having a Ti&#x2014;O skeleton and the calcium and the iodine ions adsorbed between the layers.

Iodine-loaded bone repair material and method for producing the same

A semiconductor device has an MIS structure that includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film has a layered structure that includes a base SiOlayer and a high-k layer on the base SiOlayer and containing Hf. The gate electrode has a portion made of a metal material having a work function of higher than 4.6 eV, the portion being in contact with at least the high-k layer.

Semiconductor device including an MIS structure

A semiconductor device according to the present invention has a MIS structure that includes a semiconductor layer, a gate insulating film in contact with the semiconductor layer, and a gate electrode formed on the gate insulating film, and the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%. A semiconductor device is thereby provided with which electron trapping in the gate insulating film can be reduced and shifting of a threshold voltage Vcan be suppressed.

Semiconductor device

[Problem] To provide an SiC semiconductor device, with which stabilization of high-temperature operation can be achieved by decreasing mobile ions in a gate insulating film, and a method for manufacturing the SiC semiconductor device. [Solution Means] A semiconductor devicehas an MIS structure including an SiC epitaxial layer, a gate insulating filmand a gate electrodeformed on the gate insulating film. A gate insulating filmincludes a silicon oxide film in contact with the SiC epitaxial layer. In the MIS structure, an area density Qof positive mobile ions in the gate insulating filmis made no more than 1&#xd7;10cm.

Semiconductor device and method for manufacturing same

An electrophotographic photoreceptor includes a cylindrical base and a photosensitive layer disposed on the cylindrical base. The photosensitive layer has a photoconductive layer disposed on the cylindrical base, a charge injection blocking layer disposed on the photoconductive layer, and a surface layer disposed on the charge injection blocking layer. The charge injection blocking layer contains at least one of nitrogen and oxygen, carbon, and a group 13 element. A content of the at least one of nitrogen and oxygen contained in the charge injection blocking layer is lower on a side of the surface layer than on a side of the photosensitive layer.

Electrophotographic photoreceptor and image forming apparatus including the same

A method for producing a semiconductor device () is disclosed. The semiconductor device () includes: 1) a semiconductor substrate (), 2) a hetero semiconductor area () configured to contact a first main face (A) of the semiconductor substrate () and different from the semiconductor substrate () in band gap, 3) a gate electrode () contacting, via a gate insulating film (), a part of a junction part () between the hetero semiconductor area () and the semiconductor substrate (), 4) a source electrode () configured to connect to the hetero semiconductor area (), and 5) a drain electrode () configured to make an ohmic connection with the semiconductor substrate (). The method includes the following sequential operations: i) forming the gate insulating film (); and ii) nitriding the gate insulating film ().

Method for producing semiconductor device

The present invention is directed to a method for replacing a nucleus pulposus in an intervertebral disk, which method includes: providing a spinal intervertebral disk replacement molded-dry-product for nucleus pulposus including a polyvinylalcohol gel having a percentage of saturated water content of 18 to 50 wt % before irradiation and being irradiated with &#x3b3; ray at an intensity of 20 to 100 kGy; and inserting the spinal intervertebral disk replacement molded-dry-product for nucleus pulposus into a prosthetic space inside an anulus fibrosus through an incision opening of the anulus fibrosus, wherein the molded-dry-product changes its shape into an almost cylindrical or almost elliptically cylindrical shape so that a hollow region comes into existence at a shape deformation rate of 150 vol % or more and at a volume swelling ratio of 135 vol % or less by water absorption.

Spinal intervertebral disk replacement material for nucleus pulposus and production method thereof

A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Schottky barrier diode and method for making the same

A bone cement composition which contains titanium dioxide particles having a median diameter of 0.5 to 7.0 &#x3bc;m as measured by a laser diffraction/scattering particle size distribution analyzer and a BET specific surface area of 0.5 to 7.0 m/g as measured by a nitrogen adsorption method, and a base-forming component comprising a (meth)acrylate polymer and a (meth)acrylate monomer, wherein the content of the titanium dioxide particles is 5 to 50% by mass based on the total mass of the composition. The bone cement composition has bioactivity and is capable of forming a hardened material having a high mechanical strength.

Bone cement composition and production method thereof, and kit for producing the same

A bone cement composition which contains large-diameter (meth)acrylate polymer particles having an average particle diameter of 10 to 60 &#x3bc;m, small-diameter (meth)acrylate polymer particles having an average particle diameter of 0.1 to 2.0 &#x3bc;m, a (meth)acrylate monomer and a polymerization initiator, wherein the content of the small-diameter (meth)acrylate polymer particles is 5 to 30% by mass based on the total mass of the small-diameter (meth)acrylate polymer particles and the large-diameter (meth)acrylate polymer particles, and a part or a whole of the small-diameter (meth)acrylate polymer particles are contained in the form of aggregates having an average particle diameter of 30 to 50 &#x3bc;m.

Bone cement composition, bone cement composition kit and forming method of bone cement hardened material

The titanium oxide-organic polymer composite material for artificial bone obtained by forming titania gel on the surface of said base material by titania solution treatment to dip into a solution of 0&#xb0; C. to 50&#xb0; C. temperature for from several seconds to 1 week obtained by adding a solution consisting of acidic alcohol and water into alcohol solution of titaniumtetraalcoxide to a base material composed of a polymer compound selected from a group consisting of polyolefin, polyester and nylon, and modifying to a titanium oxide membrane which forms apatite having similar Ca/P atom ratio to an apatite of mammalian's bone in supersaturated aqueous solution to apatite or from a body fluid of mammalian by dipping said base material on the surface of which titania gel is formed into hot water of. 50&#xb0; C. to 95&#xb0; C. or solution of room temperature to 95&#xb0; C. to which acid is added.

Titanium oxide-organic polymer conjunction suitable for artificial bone

A novel winding device of special arrangement insusceptible to vibration of a drive motor. A winding roll () is supported on a winding arm () and combined with a drive motor. The drive motor has a body () and a rotary shaft () penetrating of the body to project from the opposite sides thereof. Furthermore, a pair of bearings () are provided on the winding arm and the rotary shaft is supported rotatably on the opposite sides of the body. A rotation-stop () is provided between the winding arm and the body and, in the rotational direction of the rotary shaft, the body is restricted by the rotation-stop and does not rotate. Consequently, a web material can be wound around the winding roll by rotating the winding roll through the drive motor.

Winding apparatus

A logical calculation circuit capable of storing data, and performing logical calculations with high reliability and high speeds are provided. The residual polarized state s' of a load ferroelectric capacitor Cs&#x2032; is actively changed so that the residual polarized state s&#x2032; of a load ferroelectric capacitor Cs&#x2032; is opposite to the residual polarized state s of a storage ferroelectric capacitor Cs. In the case a reference potential is made c=0 in the calculation operation, even if the second data to be calculated x=1 is given to the storage ferroelectric capacitor Cs in the residual polarized state s (the first data to be calculated)=0, the ferroelectric capacitor Cs does not reverse in polarity. Even with combinations other than s=0 and x=1, the ferroelectric capacitor Cs does not reverse in polarity. Difference is great between a potential VA=VA(0) occurring at a coupling node when x=1 is given to the ferroelectric capacitor Cs of s=0 and a potential VA=VA(1) occurring at the coupling node when x=1 is given to the ferroelectric capacitor Cs of s=1.

Logical calculation circuit, logical calculation device, and logical calculation method

Growing community of inventors

Kyoto, Japan

Takashi Nakamura