Sumitomo Electric Industries, Limited

Takashi Nakabayashi

Atsushi Hamakawa

Noriaki Kaida

A distributed feedback semiconductor laser comprises a first cladding layer, a first optical guide layer, an active layer, a second optical guide layer, an InP semiconductor layer, an InGaAsP semiconductor layer, and a second cladding layer. The first optical guide layer is provided on the first cladding layer. The active layer is provided on the first optical guide layer. The second optical guide layer is provided on the active layer and made of AlGaInAs semiconductor. The InP semiconductor layer is provided on the second optical guide layer. The InGaAsP semiconductor layer is provided on the InP semiconductor layer. The second cladding layer is provided on the InGaAsP semiconductor layer and made of InP semiconductor. A diffraction grating for the distributed feedback semiconductor laser includes the InGaAsP semiconductor layer and the second cladding layer.

Distributed feedback semiconductor laser

A light generating modulecomprises a housinga semiconductor light-emitting devicea driving elementand a monitoring light-receiving deviceThe monitoring light-receiving deviceis optically coupled with the semiconductor light-emitting deviceThe driving elementdrives the semiconductor light-emitting deviceThe housingcontains the semiconductor light-emitting devicethe driving elementand the monitoring light-receiving deviceThese elementsandare disposed sequentially along a predetermined axis. The driving elementis disposed between the semiconductor light-emitting deviceand the monitoring light-receiving deviceThis configuration makes it possible to dispose the driving elementclose to the semiconductor light-emitting deviceso as to achieve a transmission rate of 10 Gbps without degrading the optical coupling between the semiconductor light-receiving deviceand the semiconductor light-emitting device

Light generating module

A package contains therein a semiconductor laser element for emitting light and a semiconductor circuit element for driving the semiconductor laser element and is provided with an optical fiber supporting face and a back face. The optical fiber supporting face is provided for supporting an optical fiber for transmitting the light from the semiconductor laser element, and the back face is opposed to the optical fiber supporting face. The back face has a lead pin for feeding a positive-phase signal into the semiconductor circuit element and a lead pin for feeding a negative-phase signal into the semiconductor circuit element. The lead pins penetrate through the back face. The semiconductor circuit element receives positive-phase and complementary negative-phase signals, both including a high-frequency component of 10 GHz or higher, through the lead pins, converts these signals into a single-ended signal, and outputs the resulting signal to the semiconductor laser element.

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Yokohama, Japan

Takashi Nakabayashi