Nichia Chemical Industries, Limited

Nichia Corporation

Takashi Mukai

Shuji Nakamura

Naruhito Iwasa

Koji Tanizawa

Tomotsugu Mitani

Takuya Suzuki

Hiroshi Marui

A light emitting module includes a laser element and a conversion member to convert a laser beam in a light having a different wavelength from a wavelength of the laser beam. A first FET includes a first gate. A second FET includes a second gate. A first transistor is serially connected to the second FET at a first connection node that is connected to the first gate. A sensing wire is provided on the conversion member. A second resistor is serially connected to the sensing wire at a second connection node that is connected to the second gate.

Light emitting module

A light emitting module includes a laser element and a first transistor including a first electrode connected to the laser element, a second electrode connected to a power supply, and a control electrode. A second transistor includes a first electrode connected to a second reference potential via a first resistor, a second electrode connected to a first reference potential, and a control electrode. The control electrode of the first transistor is connected to the first electrode of the second transistor and the first resistor. A conversion member is to convert a laser beam emitted by the laser element and includes a sensing wire via which the control electrode of the second transistor is connected to a third reference potential. The control electrode of the second transistor is connected to a fourth reference potential via a second resistor.

A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3&#xd7;10cm, and the resistivity can be lowered below 8&#xd7;10&#x3a9;cm.

Nitride semiconductor device

A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In Ga N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.

Light-emitting gallium nitride-based compound semiconductor device

A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In,Ga,N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.

A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0&lt;x&lt;1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.

A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure is disclosed. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0&lt;x&lt;1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.

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Anan, Japan

Takashi Mukai