Canon Kabushiki Kaisha

Renesas Electronics Corporation

Lenovo Innovations Limited (hong Kong)

Fuji Electric Co., Ltd.

Fuji Jukogyo Kabushiki Kaisha

Takashi Moriyama

Shinjiro Okada

Takao Takiguchi

Akira Tsuboyama

Jun Kamatani

Seishi Miura

Manabu Furugori

Satoshi Igawa

Hidemasa Mizutani

Koji Noguchi

Hironobu Iwawaki

Yasufumi Asao

Masahiro Terada

Nobuhiko Sato

Takeshi Togano

Shosei Mori

Masahiro Fushimi

Yukio Hanyu

Shinichi Nakamura

Takeshi Ichikawa

Katsuhiko Hotta

Masaaki Minowa

Takuro Homma

Masahiro Ogawa

Koichi Sato

Kiyofumi Sakaguchi

Yasushi Shimizu

Kazuaki Tashiro

Toshiaki Ono

Masanobu Asaoka

Ikuo Nakazawa

Nobuhiro Ito

Tatsuhito Goden

Noriyuki Shikina

Shigeki Kondo

Ryuichiro Isobe

Nozomu Izumi

Junya Tamaki

Toshiko Morii

Yasuaki Takeda

Junichiro Kanbe

Yasuyuki Watanabe

Toshihiko Mimura

Masami Iseki

Hideaki Takao

Tomoyuki Hiroki

Satoru Shiobara

Hirokatsu Miyata

Jian Chen

Kohei Nagayama

Taro Endo

Kaoru Okamoto

Syuji Yamada

Naoya Nishida

Takehiko Maeda

Yasushi Iwakura

Takashi Tonegawa

Seiya Isozaki

Katsumi Arai

Kazuya Tachimoto

Takayuki Sakanaba

Ryoji Muramoto

Yoshiki Oka

Daisuke Kamachi

Yasushi Omura

Takao Takuguchi

A semiconductor device and a method for manufacturing the semiconductor device which ensure improved reliability, permit further miniaturization, and suppress the increase in manufacturing cost. The semiconductor device includes: a pad electrode formed in the uppermost wiring layer of a multilayer wiring layer formed over a semiconductor substrate; a surface protective film formed in a manner to cover the pad electrode; an opening made in the surface protective film in a manner to expose the pad electrode partially; and a conductive layer formed over the pad electrode exposed at the bottom of the opening. The thickness of the conductive layer formed over the pad electrode is smaller than the thickness of the surface protective film formed over the pad electrode.

Semiconductor device with over pad metal electrode and method for manufacturing the same

A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

Solid-state imaging apparatus, method for manufacturing the same, and imaging system

A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.

Method of manufacturing semiconductor device

A solid-state image sensor includes an image sensing unit in which a plurality of pixels are arrayed, a plurality of readout units configured to read out signals from the image sensing unit, a detector configured to detect an occurrence of a latch-up in each of the plurality of readout units, and a controller configured to control power supply to the plurality of readout units. The plurality of readout units are configured to read out signals from a same pixel in the image sensing unit. The controller is configured to shut off power supply to at least part of a readout unit in which the occurrence of the latch-up has been detected out of the plurality of readout units and thereafter supply power to the at least part.

Solid-state image sensor and camera

An image sensor includes a readout unit having a plurality of circuit blocks. At least a part of each of the plurality of circuit blocks is arranged in each of a plurality of regions electrically isolated from each other. When latchup has occurred in a circuit block of the plurality of circuit blocks, the voltage supply unit shuts off supply of a power supply voltage to the region in which the part is arranged, and then performs the supply of the power supply voltage to the region in which the part is arranged, and the voltage supply unit supplies the power supply voltage to the region in which the circuit block without latchup is arranged, while shutting off the supply of the power supply voltage to the region in which the part is arranged.

A solid-state image sensor is provided. The solid-state image sensor includes a substrate. The substrate includes an electrode layer, an insulating layer arranged on the electrode layer, and a semiconductor layer arranged on the insulating layer. The semiconductor layer includes a first semiconductor region of a first conductivity type, a second semiconductor region configured to accumulate charges generated by photoelectric conversion, the second semiconductor region being arranged on the first semiconductor region and having a second conductivity type opposite to the first conductivity type, and a third semiconductor region of the second conductivity type to which the charges accumulated in the second semiconductor region are transferred.

Solid-state image sensor

In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130&#xb0; C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

Semiconductor integrated circuit device having protective split at peripheral area of bonding pad and method of manufacturing same

A steam turbine direct contact condenser prevents cooling water sprayed from spray nozzles from reaching turbine blades of an axial-flow turbine, while introducing turbine exhaust gases exhausted by a steam turbine in the horizontal direction to cool such gases. The condenser includes an exhaust gas inlet part that introduces the turbine exhaust gases containing steam of the steam turbine and non-condensable gases in the horizontal direction, a steam cooling chamber that sprays cooling water to the introduced turbine exhaust gases to cool them, and a water storage disposed at the bottom of the steam cooling chamber that stores condensed water cooled from the steam and the cooling water. The steam cooling chamber includes a first cooling water spraying mechanism and a second cooling water spraying mechanism.

Direct contact condenser for a steam turbine and having a first cooling water spraying mechanism spraying cooling water downstream and a second cooling water spraying mechanism spraying cooling water in multiple directions

A photographing device includes a display unit, a movement detection unit and a display control unit. The display unit displays a preview image of being a target to photograph. The movement detection unit detects the preview image being moving from status at which the preview has been photographed as a reference photographed image. The display control unit displays a reference line on the preview image. The reference line has been set in the reference photographed image. The display control unit changes a display position and a direction of the reference line in the display unit based on a detected result by the movement detection unit.

Photographing device, portable information processing terminal, monitor display method for photographing device, and program

Semiconductor integrated circuit device and method of manufacturing same

[PROBLEMS] To share information in one of divided screens of a terminal device with members performing PoC communications. [MEANS FOR SOLVING PROBLEMS] A plurality of terminal devices used by the members performing PoC communications are included, and at least one of the screens partitioned and displayed by a screen dual-partitioning deviceon a specific terminal device is shared with other terminal devices used by members performing PoC communications.

Information sharing system, information sharing method, terminal device and program

A metal coordination compound represented by the formula: An organic luminescence device including an anode, a cathode, and an organic layer, which contains the metal coordination compound, disposed between the anode and the cathode.

Luminescence device and display apparatus

A dimming method of an organic EL displaying apparatus having a displaying unit constructed by combining pixels each having a substrate, an organic EL element formed over the substrate, a power supply line for supplying a power source to the organic EL element, and at least one TFT provided on a wiring path from the power supply line to the organic EL element. The TFT has a semiconductor layer which is arranged between a source electrode and a drain electrode and is electrically connected to the source electrode and the drain electrode. A laser beam is irradiated from a downward direction of the substrate to a region which does not overlap a gate electrode, the source electrode, the drain electrode, and the wiring layer when seen as a plan view in a plane region where the semiconductor layer is provided.

Dimming method of organic EL displaying apparatus and organic EL displaying apparatus

Growing community of inventors

Kawasaki, Japan

Takashi Moriyama