Olympus Optical Company, Ltd.

Takashi Mizusaki

Atsushi Yusa

Jun-ichi Nishizawa

Hidetoshi Yamada

Susumu Takahashi

Kimihiko Nishioka

Yoshinori Ohta

Hideo Adachi

Takashige Tamamushi

Masayoshi Esashi

Nobuo Yamashita

Akihiro Namba

Toshimasa Akagi

Kiyozo Koshiishi

Jun Funazaki

Kunio Ohno

Hiroshi Abe

Masaru Iino

Tadayuki Matsuo

An optical waveguide apparatus comprising a substrate made of material the refractive index of which is changed by an electric effect, and an optical waveguide which is formed on a portion of the substrate and allows passage of guided light. In the apparatus, the optical waveguide includes an optical path changing section for periodically producing an electromotive force under the control of one of control light and guided light.

Optical waveguide apparatus for controlling a signal light traveling

A solid state image pick-up device having a number of static induction transistor image sensors arranged in a matrix form, each static induction image sensor includes a drain region formed by an n+ substrate connected to the earth potential, a channel region formed by an n.sup.- epitaxial layer grown on the substrate, a ring-shaped p+ gate region formed in a surface of the epitaxial layer, an n+ source region formed in a part of the surface of the epitaxial layer surrounded by the ring-shaped gate region and a p+ overflow drain region formed in the surface of the substrate underneath the gate region. By adjusting a time duration of a shutter control signal having a positive voltage applied to the overflow drain region, a time period during which photocarriers, i.e. electrons are flown into the gate region and stored therein, can be controlled at will, and an electronic shutter function can be achieved.

Solid state image pick-up device having a number of static induction

A solid state image sensor including a substrate, an epitaxial layer grown on the substrate, an opaque bottom electrode applied on the epitaxial layer, a photoconductor film deposited on the bottom electrode, a transparent surface electrode applied on the photoconductor film, a reading-out SIT formed in the epitaxial layer and a resetting MOS-FET also formed in the epitaxial layer. A gate diffusion region of the reading-out SIT is connected to the bottom electrode and a source region of resetting MOS-FET is also connected to the bottom electrode. A source electrode connected to the source region of the reading-out SIT is extended under the bottom surface, while an insulating layer is interposed therebetween to form a capacitance. Charge carriers stored in the gate region of the reading-out SIT can be read-out to derive a large output voltage due to the amplifying function of the reading-out SIT.

Solid state image sensor comprising photoelectric converting film and

An apparatus for picking-up an image of an object including a solid state image sensor having a number of image sensing elements and an objective lens for projecting the image of the object onto the image sensor is disclosed. In order to remove a curvature of field of the objective lens, the image sensor is curved into a spherical shape having a radius of curvature equal to that of the curvature of field. The solid state image sensor may be curved in any desired shape to correct various aberrations of the objective lens.

Image pick-up apparatus

An ion sensor and more particularly ion sensitive field effect transistor comprising an inorganic film, and an impurity layer formed in at least surface layer of said inorganic film by thermal diffusion or ion implantation.

Ion sensor FET with surface treated metal gate

An electrode sensitive to ions in solution comprises an outer tubular body having an opening at its one end, an inner tubular body secured to the other end of the outer tubular body and having an opening at its one end, a tip member threadingly engaged to one end of the outer tubular body and having an aperture at its one end, a first porous membrane provided between the tip member and one end of the outer tubular body to define a first reservoir together with the outer tubular body, a sealing member provided around the periphery of the first porous membrane, a second porous membrane provided at one end of the inner tubular body to define a second reservoir therein, an ion-exchanger liquid accommodated in the first reservoir and in contact with the first porous membrane directly, an internal reference solution accommodated in the second reservoir, and an inner reference electrode connected to a shielded cable extended through the other end of the outer tubular body and dipped in the internal reference solution. The tip member for holding the first porous membrane is formed by a metal tube and at least a portion of the metal tube in contact with a solution to be tested is coated with an insulating film.

Ion selective electrode

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Hamamatsu, Japan

Takashi Mizusaki