Nichia Corporation

Takashi Miyoshi

Shingo Masui

Naoto Morizumi

Shinya Sonobe

Takeshi Okada

Wataru Kuribayashi

A light emitting device includes a semiconductor light emitting element to emit an excitation light, a wavelength converting member to emit fluorescent light upon being irradiated with the excitation light, a package supporting the semiconductor light emitting element and the wavelength converting member, and a first photodetector configured to detect the excitation light and a second photodetector to detect the fluorescent light, located in the package.

Light emitting device

A semiconductor laser element includes: a light emitting layer of a nitride semiconductor that is placed above a substrate of GaN and has a refractive index higher than the substrate, wherein the semiconductor laser element further includes the following layers between the substrate and the light emitting layer in an order from the substrate: a first nitride semiconductor layer of AlGaN; a second nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer of an InGaN; and a fourth nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer.

Semiconductor laser element

A nitride semiconductor laser diode comprises a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer having a light emitting layer including InAlGaN (0&#x3c;x&#x3c;1, 0&#x2266;y&#x3c;1, and 0&#x3c;x+y&#x3c;1) and disposed on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer. The lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater. A concentration distribution of the p-type impurity in a depth direction from the light emitting layer toward the surface of the p-side nitride semiconductor layer has a local maximum with the concentration of the p-type impurity of 5&#xd7;10cmor greater in a range within 300 nm from the top surface of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after passing the local maximum, the concentration of the p-type impurity is not less than 6&#xd7;10cmin the range within 300 nm.

Nitride semiconductor laser diode

A nitride semiconductor laser diode includes a substrate, an n-side nitride semiconductor layer formed on the substrate, an active layer formed on the n-side nitride semiconductor layer and having a light emitting layer including InAlGaN (0&#x3c;x&#x3c;1, 0 y&#x3c;1, 0&#x3c;x+y&#x3c;1), and a p-side nitride semiconductor layer formed on the active layer. In the nitride semiconductor laser diode, the lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater, dislocations originated in the active layer penetrate through the p-side nitride semiconductor layer, with the dislocation density in the p-side nitride semiconductor layer being 1&#xd7;10cmor greater, and the concentration distribution of p-type impurities in the depth direction is such that, from the light emitting layer toward the surface of the p-side nitride semiconductor layer, the concentration of the p-type impurity reaches a maximum value of 5&#xd7;10cmor greater within a range of 300 nm from the top portion of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after reaching the maximum value, the concentration remains at 6&#xd7;10cmor greater in the above-described range of 300 nm.

A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normal direction.

Semiconductor laser element and method of manufacturing thereof

The nitride semiconductor laser device includes a substrate, a nitride semiconductor layer having a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer stacked in this order on the substrate, and a ridge provided on a surface of the nitride semiconductor layer. The surface of the nitride semiconductor layer includes a generally flat part and first and second grooves which extend along the ridge in a resonator direction, the first groove being formed continuous to a first side surface of the ridge, the second groove being formed continuous to a second side surface of the ridge which is opposite to the first side surface.

Nitride semiconductor laser device

The composition of the present invention is one for forming a transparent conducting film, the composition comprising a water-soluble indium compound, a halogen-containing water-soluble organotin compound and a water-soluble organic high molecular compound. A method for forming a transparent conducting film according to the invention comprises the steps of i) applying to a substrate a solution for forming a transparent conducting film containing the composition in water or a solvent comprising water and an organic solvent, and ii) firing the coating film. This method may further include iii) the step of subjecting the film obtained in the firing step ii) to a reducing heat treatment.

Composition for forming a transparent conducting film, solution for forming a transparent conducting film and method of forming a transparent conducting film

Growing community of inventors

Anan, Japan

Takashi Miyoshi