Taiyo Yuden Co., Ltd.

Hitachi, Ltd.

Takashi Miyagawa

Yutaka Uematsu

Satoru Watanabe

Takayuki Ono

Hideki Osaka

Hitoshi Ueno

Akio Idei

Satoshi Muraoka

Masabumi Shibata

Michinori Naito

Yuichi Fukuda

Hiroshi Kakita

Taishi Sumikura

Yuusuke Fukumura

Shinji Yamamoto

Yoshihiro Kondo

Tsutomu Kikuchi

Kazunori Nakajima

Kazushige Hatakeyama

Kaoru Sakinada

Motoi Yamauchi

Yasuyuki Oda

Yusuke Fukumura

Ryouta Iwabuchi

Jumpei Konno

Yuki Maruya

An electronic device includes a support substrate, a piezoelectric layer that is provided on the support substrate, a functional element including an electrode provided on a surface of the piezoelectric layer, a metallic frame body that is provided on the support substrate so as to surround the piezoelectric layer and the functional element in a plan view, a metallic lid that is provided on the frame body so as to form a space between the lid and the support substrate, and seals the functional element into the space, and a columnar body that is provided between the support substrate and the lid in the space.

Electronic device

A method of fabricating an electronic device, the method including: arranging a device chip with no bump located on a lower surface of the device chip on a mounting substrate including a bump located on an upper surface of the mounting substrate; and bonding a pad located on the lower surface of the device chip and the bump by applying an ultrasonic wave to the device chip from an upper surface of the device chip.

Electronic device and method of fabricating the same

A memory module having different types of memory mounted together on a double-sided substrate has a first edge and opposite second edge and includes a plurality of memory controllers, a plurality of flash memories, and a plurality of second memories having a higher signal transmission rate than the flash memories. A socket terminal for connecting the double-sided substrate to a motherboard is formed on the front surface and the back surface of the double-sided substrate on the first edge side; the memory controllers are disposed on the second edge side; the second memories are disposed on the second edge side at positions opposite the positions at which the memory controllers are disposed; and the flash memories are disposed on at least the back surface thereof at positions that are closer to the first edge than are the positions at which the memory controllers and the second memories are disposed.

Memory module having different types of memory mounted together thereon, and information processing device having memory module mounted therein

In methods connecting a memory module configured from DRAM, which is high-speed memory, and a memory module configured from flash memory which is slower than DRAM but is high-capacity memory, to a CPU memory bus, in the case of sequential reading, the busy rate of the CPU memory bus increases, and performance degradation occurs easily. In the present invention, an information processing device has a CPU, a CPU memory bus, and a primary storage device. The primary storage device has a first memory module and a second memory module. The first memory module has high-speed memory. The second memory module has memory having the same memory interface as that of the high-speed memory, high-capacity memory having a different memory interface from that of the high-speed memory, and a controller that controls same. The first memory module and second memory module are caused to be accessed by the memory interface of the high-speed memory.

DRAM having SDRAM interface and flash memory consolidated memory module

When DRAMs that are high-speed memories and flash memories that are lower in speed but can be larger in capacity than the DRAM are to be mounted on a DIMM, what matters in maximizing CPU memory bus throughput is the arrangement of the mounted components. The present disclosure provides a memory module (DIMM) that includes memory controllers arranged on the module surface closer to a socket terminal and DRAMs serving as high-speed memories arranged on the back surface. Nonvolatile memories as large-capacity memories are arranged on the side farther from the socket terminal.

DRAM with SDRAM interface, and hybrid flash memory module

A method of fabricating an electronic component includes: mounting a device chip on an upper surface of an insulative substrate; forming a sealing portion that seals the device chip; cutting the insulative substrate and the sealing portion; and forming a plated layer covering the sealing portion by barrel plating.

Method of fabricating electronic component

An acoustic wave device includes, a substrate, an acoustic wave device chip that has a vibration part exciting an acoustic wave and is mounted on a surface of the substrate so that the vibration part is exposed to a space formed between the substrate and the acoustic wave device chip, and a joining part that is provided so as to surround the vibration part and joins the substrate and the acoustic wave device chip together. The joining part includes a first member made of solder, and a second member that is stacked on the first member and is made of a substance having a melting point higher than the solder. The second member has a thickness larger than a coplanarity of the surface of the substrate.

Acoustic wave device

Growing community of inventors

Tokyo, Japan

Takashi Miyagawa