Nippon Telegraph and Telephone Corporation

Renesas Technology Corp.

Renesas Electronics Corporation

Other

Hitachi Ulsi Systems Co., Ltd.

Hitachi Yonezawa Electronics Co., Ltd

Takashi Miwa

Azusa Ishii

Masahiro Ichitani

Takanori Hashizume

Takafumi Nishita

Soichi Oka

Masamitsu Watanabe

Noriyuki Takahashi

Kazunari Suzuki

Masayuki Suzuki

Kenichi Imura

Kouji Tsuchiya

Takao Matsuura

Yasumi Tsutsumi

Atsushi Nakamura

Michiaki Sugiyama

Naozumi Morino

Yosuke Takeuchi

Takuya Kamisho

Yasuko Maruo

Jiro Nakamura

Ikuo Kudo

Saneaki Tamaki

Tatsuya Kunioka

Masamichi Sato

Kazumasa Yanagisawa

Tatsuya Hirai

Takashi Kikuchi

Ryosuke Kimoto

Masanori Shibamoto

Toshikazu Ishikawa

Hiroshi Koyama

Hiroshi Kawakubo

Chikako Imura

Seizo Sakata

Masaru Kawakami

A first chromatogram is obtained by analyzing a second standard sample by size exclusion chromatography analysis using a first detector. Also, a second chromatogram is obtained by analyzing a solvent for the second standard sample by size exclusion chromatography analysis using the first detector. Then, from the difference between the first chromatogram and the second chromatogram, a third elution time in size exclusion chromatography analysis of the second standard sample using the first detector is determined.

Analysis method

A zinc spraying material comprises a zinc material containing zinc; and a sulfate salt whose solubility in water is ⅛ or more of the solubility of calcium sulfate. The content of the sulfate salt in the zinc spraying material can be 0.006 to 0.14 mol based on 100 g of the content of the zinc material. Note that the sulfate salt can be at least one of potassium sulfate, sodium sulfate, magnesium sulfate, calcium sulfate, ferric sulfate, ferrous sulfate, lithium sulfate, calcium sulfate, and aluminum sulfate. Also, the zinc material is zinc. Alternatively, the zinc material can also be a zinc alloy containing zinc as the main component and at least one metal selected from aluminum and magnesium.

Zinc tharmal splaying material and method for manufacturing the same and tharmal splaying device

The galvanized member includes a member formed of a metal and a hot-dip galvanized layer formed on the surface of the member. The hot-dip galvanized layer contains a sulfate salt having a higher water solubility than calcium sulfate. A sulfate salt content of the hot-dip galvanized layer is preferably 0.008 to 0.133 mol based on 100 g of zinc. The sulfate salt contained in the hot-dip galvanized layer is preferably at least one of potassium sulfate, sodium sulfate, magnesium sulfate, calcium sulfate, ferric sulfate, ferrous sulfate, lithium sulfate, calcium sulfate, and aluminum sulfate.

Galvanized member

A coating material is allowed to contain a sulfate having a higher degree of solubility in water than that of calcium sulfate. The sulfate is an additive for coating materials which is used for reducing the consumption of zinc (including zinc oxide) in a coating film formed from the coating material and the corrosion of a base material when the coating film is scratched. The content of the sulfate can be 0.004 to 0.65 mol per 100 g of the content of zinc. Alternatively, the content of the sulfate may be 0.006 to 0.186 mol per 100 g of a heating residue (except for the sulfate added) of a coating film.

Coating material

In a first step, a sample liquid is fabricated by mixing a sample formed of a polyester or decomposition products of a polyester into a solvent. The solvent used here contains chloroform and 2,2,2-trifluoroethanol and has an organic base added thereto. The organic base is at least one of a primary amine, a secondary amine, a tertiary amine and a heterocyclic amine. Next, in a second step, each of the amount of the terephthalic acid terminal and the amount of the hydroxy group terminal in the sample liquid is measured through a nuclear magnetic resonance spectroscopy aiming at hydrogen atoms. Subsequently, in a third step, the number average molecular weight of the sample is calculated from the amount of the terephthalic acid terminal and the amount of the hydroxy group terminal measured in the second step.

Molecular weight measurement method and solvent for use in measurement

An accelerated corrosion test apparatus includes: a moisture sensor disposed near the reinforcing steel exposed from a cracked portion of concrete; a weight measuring instrument that measures a weight of the reinforced concrete specimen; and a control terminal that is connected both to the moisture sensor and to the weight measuring instrument and controls a temperature and humidity control device, thereby alternately and repeatedly performing a wetting step of supplying moisture to the inside of a crack in the cracked concrete, and a drying step of removing moisture in the inside of the crack and moisture on the exposed surface of the reinforcing steel, wherein the control terminal terminates the wetting step and starts the drying step when moisture is detected in the moisture sensor, or when change in slope of weight change of the reinforced concrete specimen is detected, after the start of the wetting step.

Method and apparatus for accelerated corrosion testing

In a first step, a sample liquid is fabricated by mixing a sample formed of a polyester or decomposition products of a polyester into a solvent. The solvent used here contains chloroform and 2,2,2-trifluoroethanol and has an organic base added thereto. The organic base is at least one of a primary amine, a secondary amine, a tertiary amine and a heterocyclic amine. In a second step, the amount of terephthalic acid in the sample liquid is measured through a nuclear magnetic resonance spectroscopy aiming at hydrogen atoms

Method for measuring terephthalic acid content and solvent for use in measurement

In a first step, a sample formed of a polyester or decomposition products of a polyester is dissolved in a pretreatment liquid containing 1,1,1,3,3,3-hexafluoro-2-propanol and an organic base to produce a reaction product of the sample, and in a second step, the obtained reaction product is mixed into a solvent (measurement solvent) containing deuterated chloroform and deuterated 1,1,1,3,3,3-hexafluoro-2-propanol to fabricate a sample liquid. Next, in a third step, the amount of the reaction product in the sample liquid is measured through NMR aiming at hydrogen atoms to determine the amount of an acid anhydride structure in the sample.

Method for measuring acid anhydride content

To estimate penetration behavior of hydrogen up until hydrogen content reaches saturation even if load stress on steel is equal to or higher than threshold stress. A hydrogen penetration behavior estimation device includes a first measurement data input unit adapted to input first measurement data concerning variation of hydrogen content with time up until hydrogen content in steel-to-be-estimated reaches saturation when measurements are taken by applying such stress to the steel that no hydrogen embrittlement fracture occurs; a second measurement data input unit adapted to input second measurement data concerning variation of hydrogen content in the steel-to-be-estimated with time up until the steel fractures when measurements are taken by applying such stress to the steel that hydrogen embrittlement fracture occurs; a ratio calculation unit adapted to calculate increases in hydrogen contents in an initial stage of measurement and calculate a ratio of the second measurement data to the first measurement data in terms of increase in hydrogen content; and a saturated hydrogen content calculation unit adapted to multiply saturated hydrogen content based on the first measurement data by the ratio and designate the product as saturated hydrogen content of the steel-to-be-estimated, the saturated hydrogen content being reached upon application of such stress that hydrogen embrittlement fracture occurs.

Method for estimating hydrogen absorption behavior, device for estimating hydrogen absorption behavior, and program for estimating hydrogen absorption behavior

A painting fiber probe having a measurement surface on which a coating film is formed with the same painting specification as that of a sample (painted steel sheet) is placed in a test tank together with the sample. A cycle consisting of three steps of saline water spraying, drying and wetting is repeated on the sample and the painting fiber probe. In the drying step of the cycle, absorbance at a specific wavelength of the coating film formed on the painting fiber probe is measured at a regular interval and drying is ended when the measured absorbance satisfies a predetermined condition.

Corrosion testing method and corrosion testing device

A first conductive member made of metal is provided over a first wiring substrate, which is a mounting substrate in the lower tier, a through hole is provided in a second wiring substrate, which is a mounting substrate in the upper tier, at a position corresponding to the first conductive member in a plan view, and a wiring is exposed at the sidewall of the through hole. The first conductive member is inserted into the through hole on the corresponding first wiring substrate side and the first wiring substrate and the second wiring substrate are electrically coupled by filling the through hole with a second conductive member. an electrode pad that is electrically coupled to the second conductive member and over which a semiconductor member in the upper tier is mounted is formed on the main surface side of the second wiring substrate.

Method of manufacturing semiconductor device

A vessel () containing a detector solution () is prepared. The detector solution () is an aqueous solution prepared by dissolving a detector component containing a dye which changes its color when reacting with ozone gas, a humectant, and an ultraviolet absorber having a hydrophilic group. A prepared sheet-like carrier () is dipped in the detector solution () for, e.g., 30 sec, thereby forming an impregnated sheet () by impregnating the sheet-like carrier () with the detector solution (). The impregnated sheet () is then dried by evaporating the solvent (medium) such as water contained in the impregnated sheet (), thereby forming a sheet-like ozone detecting device ().

Ozone detecting device

A technique permitting the reduction in size of a semiconductor device is provided. In a BGA type semiconductor device with a semiconductor chip flip-chip-bonded onto a wiring substrate, bump electrodes of the semiconductor chip are coupled to lands formed at an upper surface of the wiring substrate. The lands at the upper surface of the wiring substrate are coupled electrically to solder balls formed on a lower surface of the wiring substrate. Therefore, the lands include first type lands with lead-out lines coupled thereto and second type lands with lead-out lines not coupled thereto but with vias formed just thereunder. The lands are arrayed in six or more rows at equal pitches in an advancing direction of the rows. However, a row-to-row pitch is not made an equal pitch. In land rows which are likely to cause a short-circuit, the pitch between adjacent rows is made large, while in land rows which are difficult to cause a short-circuit, the pitch between adjacent rows is made small. By so doing, both prevention of a short-circuit and improvement of the layout density of lands are attained at a time.

Semiconductor device and method for manufacturing the same

An aqueous solution is formed by dissolving a dye made of alizarin and a humectant made of glycerin, and alkalized by dissolving a base (alkaline substance), thereby preparing a detector solution () in which the content of the humectant is about 20 wt %. An impregnated carrier () impregnated with the detector solution () is formed by dipping for 30 sec a sheet-like carrier () made of cellulose filter paper in the detector solution () so that the carrier () is impregnated with the detector solution (). The impregnated carrier () is pulled up from the detector solution (), and dried in dry nitrogen by evaporating a solvent such as water contained in the impregnated carrier (), thereby forming an ozone detecting device ().

A semiconductor device is disclosed wherein first wiring lines in a first row extend respectively from first connecting portions toward one side of a semiconductor chip, while second wiring lines extend respectively from second connecting portions toward the side opposite to the one side of the semiconductor chip. The reduction in size of the semiconductor device can be attained.

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Tokyo, Japan

Takashi Miwa