Nitto-denko Corporation

Toyota Jidosha Kabushiki Kaisha

Takashi Minemoto

Seiki Teraji

Hiroto Nishii

Kazuhito Hosokawa

Taizo Masuda

Shigenori Morita

Kazunori Kawamura

Taichi Watanabe

Yutaka Niizawa

Jakapan Chantana

A method of manufacturing a CIS solar battery includes preparing a layer-shaped member that is configured by a substrate, a first electrode layer, a CIS layer, and a second electrode layer; setting a temperature of the layer-shaped member to a second temperature that is lower than the first temperature; forming a layer of a layer forming substance having a higher linear expansion coefficient than the substrate in a solid state of the layer on the second electrode layer; and cooling the layer-shaped member. In the method, a thin-film CIS solar battery is acquired by peeling the CIS layer from the first electrode layer along with contraction of the layer of the layer forming substance caused by the cooling of the layer-shaped member.

Method of manufacturing solar battery

The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

CIGS film, and CIGS solar cell employing the same

A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.

Method of producing CIGS film, and method of producing CIGS solar cell by using same

Growing community of inventors

Kusatsu, Japan

Takashi Minemoto