Hitachi, Ltd.

Nippon Telegraph and Telephone Corporation

Takashi Matsuzaka

Norio Saitou

Hiroya Ohta

Masahide Okumura

Genya Matsuoka

Katsuhiro Kawasaki

Hideo Todokoro

Norio Hasegawa

Yasunari Sohda

Yoshinori Nakayama

Katsuya Hayano

Yasuhiro Someda

Susumu Ozasa

Naoko Asai

Tadahito Matsuda

Yasuko Gotoh

Kazumi Iwadate

Ryoichi Yamaguchi

Toshihiko Kohno

An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.

Electron beam lithography apparatus and pattern forming method

A pattern can be written in accordance with a distortion which changes depending upon exposure conditions of the optical exposure system and exposed pattern features, and a pattern can be written with a high alignment accuracy by the optical exposure system and an electron beam lithography system or two optical exposure systems. A pattern which is exposed by optical exposure system divided into very small areas shown by broken lines, and pattern feature amounts (fx), (fy) at each area are calculated. A correction amount is obtained by using the pattern feature amount and the position within an exposure field as parameters based on exposure distortion examined by a standard pattern predeterminedly.

Method for manufacturing semiconductor devices utilizing plurality of exposure systems

An electron beam lithography system which generates phase shift pattern data relating to main patterns, and exposes the phase shift pattern on a mask plate by using an electron beam in accordance with instruction from a computer. An electron beam lithography system is provided which can remarkably decrease a time needed for preparing phase shift pattern data. The apparatus is furnished with a parameter table for storing equations to generate phase shift pattern data, and generates the phase shift pattern data by assigning original pattern data into equations in accordance with a corresponding instruction for applying a phase shift method, and automatically exposes the phase shift pattern.

Electron beam lithography system

A mark position detection system used in a charged particle beam apparatus and including detection circuit for detecting a reflected electron generated at a mark when the mark is scanned with a charged particle beam, to obtain a mark signal, and signal processing circuit for comparing the mark signal from the detection circuit with a predetermined threshold level to find the position of the charged particle beam at a time the mark signal traverses the threshold level, thereby detecting the position of a mark edge, is disclosed in which, when the mark signal traverses the threshold level and has a peak value exceeding a predetermined value, it is determined by the signal processing circuit that the position of the charged particle beam at a time point at which the mark signal traverses the threshold level is the position of the mark.

Mark position detection system for use in charged particle beam apparatus

Disclosed is an electron beam exposure apparatus which includes an objective lens focusing an electron beam, and a dynamic focus correction lens dynamically correcting the focusing by the objective lens. The apparatus comprises a control circuit which, in order to prevent a current variation induced in the objective lens by the dynamic focus correction lens, controls current supplied to the objective lens so as to cancel the current variation induced in the objective lens due to the coil current of the dynamic focus correction lens.

Electron beam exposure apparatus

An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.

Apparatus for electron beam lithography

A method of and apparatus for displaying an image of phase contrast in a scanning transmission electron microscope, in which an electron beam flux transmitted through a specimen is deflected with a high frequency and repeatedly moved on an aperture provided in a region where a transmitted electron beam and a scattered electron beam interfere, and among signal components detected by a detector through the aperture, only a signal synchronous with the high frequency is sampled and detection-rectified, whereby the difference of the intensities of the region where both the electron beams interfere is detected so as to display the image of phase contrast of the specimen.

Method of displaying an image of phase contrast in a scanning

Growing community of inventors

Kokubunji, Japan

Takashi Matsuzaka