Tohoku University

Shin-etsu Handotai Co., Ltd.

Takashi Matsuura

Junichi Murota

Masao Sakuraba

Yosuke Shimamune

Takao Abe

A metal-semiconductor junction comprising a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 10 cm or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.

Semiconductor device having a metal-semiconductor junction with a reduced contact resistance

There is provided a novel bonded semiconductor wafer having a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more and manufactured by means of a bonding process, wherein at least one of the insulator layers is formed with ion implanted oxygen, and a novel manufacturing process for a bonded semiconductor wafer in which an ion implantation separation process is adopted. The novel bonded semiconductor wafer is manufactured by means of a bonding process and has a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more, wherein at least one of the insulator layers is formed with ion implanted oxygen.

Semiconductor wafer and method for producing the same

A metal-semiconductor junction comprises a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 10 cm or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.

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Sendai, Japan

Takashi Matsuura