Tokyo Electron Limited

Nippon Meat Packers, Inc.

Thk Co., Ltd.

National Agriculture and Food Research Organization

Yamanashi University

Tokyo Electronics Limited

Yamanashi Prefecture

Nh Foods Ltd

Nakaya Ltd.

Air Products and Chemicals, Inc.

Takashi Matsumoto

Kandabara N Tapily

Mark Leonard O'Neill

Raymond Nicholas Vrtis

Ryota Ifuku

Kenjiro Koizumi

Makoto Wada

Daisuke Nishide

Osayuki Akiyama

Yumiko Kawano

Hidekazu Michioka

Gerrit J Leusink

Jacques Faguet

Katsuya Iida

Hirokazu Ueda

Genji Nakamura

Eric M Lee

Masahito Sugiura

Yusaku Kashiwagi

Munehito Kagaya

Shuji Azumo

Hiroyuki Nagai

Yoshihiro Kato

Kenji Ouchi

Shinichi Ike

Hiroaki Kawasaki

Patrick Timothy Hurley

Masayo Nakagami

Fumiki Morimatsu

Kazuhiro Kijima

Osamu Abe

Satoshi Hiraki

Yuichiro Fujikawa

Masayuki Ishizaka

Eri Takeuchi

Kazuki Morioka

Kazuo Yoshida

Kana Urayama

Makoto Yamakawa

Katsuhiko Fukai

Toru Kanno

Syuichi Kaminogawa

Akio Ametani

Kotaro Fujita

Yasuki Taguchi

Akira Fujio

Kousaku Saito

Shin Kono

Nobutake Kabuki

Yoshihisa Takahata

Hiroshi Terada

Izumi Miyazawa

Muneshige Shimizu

Chitake Imazu

Shigeru Hagihara

A film forming method includes a first step of supplying a first aromatic hydrocarbon gas having a first functional group to a substrate provided with an underlayer film, and a second step of activating the first aromatic hydrocarbon gas adsorbed on a surface of the underlayer film by plasma of a first reaction gas that contains at least a rare gas.

Film forming method and film forming apparatus

The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region; forming carbon nanotubes on a surface of the layer of the first conductive material; and supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.

Film-forming method

A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.

A method of detecting an abnormal growth of graphene includes: preparing an inspection target having a graphene film formed on a substrate by CVD; receiving light from the graphene film by using a dark field optical system; and inspecting the received light, thereby detecting the abnormal growth of the graphene.

Method and apparatus for detecting abnormal growth of graphene

A method of forming a graphene structure includes providing a substrate to be processed and forming a graphene structure on a surface of the substrate to be processed through a plasma CVD using plasma of a processing gas including a carbon-containing gas and an oxidizing gas in a state in which the surface of the substrate to be processed does not have a catalytic function.

Method and apparatus for forming graphene structure

A method for detecting abnormal growth of graphene includes: measuring, through spectroscopic ellipsometry, a reflection spectrum of a measurement object having a graphene film formed through CVD on a substrate; creating a film structure model, calculating polarization parameters, and matching calculated values of the polarization parameters to measured values through fitting; and detecting abnormal growth of the graphene based on a value of goodness of fit obtained when fitting the polarization parameters.

Method for detecting abnormal growth of graphene, measurement apparatus, and film formation system

There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.

Flim forming method of carbon-containing film by microwave plasma

A method of forming a graphene structure, includes: providing a substrate; performing a preprocessing by supplying a first processing gas including a carbon-containing gas to the substrate while heating the substrate, without using plasma; and after the preprocessing, forming the graphene structure on a surface of the substrate through a plasma CVD using plasma of a second processing gas including a carbon-containing gas.

Method and device for forming graphene structure

There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.

Processing apparatus and film forming method

The purpose of the present invention is to: provide an agent that effectively suppresses inhibition of antigen-antibody reaction in an immunoassay using a sample containing a body fluid, in particular, a component derived from a biological mucosal membrane, such as saliva; and to suppress false positive and false negative results in the immunoassay. The present invention provides an agent for suppressing inhibition of immune reaction, characterized in that the agent comprises a compound of the following (1) or (2): (1) Sulfonic acid compound of the formula R&#x2014;SOH or a salt thereof. (In the formula, Ris selected from the group consisting of: a straight-chain C-Calkyl group; a straight-chain C-Calkyl group substituted with an aryl group having at least one straight-chain C-Calkyl group; and an aryl group having at least one straight-chain C-Calkyl group. These groups may include a substituent group); and (2) Quaternary ammonium ion of the formula N&#x2014;RRRRor a salt thereof. (In the formula, R&#x2014;Rare each independently a straight-chain C-Calkyl group, or an aryl group substituted with at least one straight-chain C-Calkyl group. These groups may include a substituent group); wherein the agent is capable of suppressing immune reaction inhibitory action caused by a body fluid in an immunoassay sample.

Immunoassay method to prevent inhibition of antigen-antibody binding interactions in mucosal fluids

There is provided a semiconductor device including a first conductive layer formed on a substrate; a second conductive layer serving as a wiring layer and a barrier layer provided between the first conductive layer and the second conductive layer, wherein the barrier layer is made of a graphene film, and the second conductive layer includes a metal silicide compound, the metal silicide compound being provided so as to be in contact with the graphene film constituting the barrier layer.

Method of making a semiconductor device including a graphene barrier layer between conductive layers

A graphene structure forming method for forming a graphene structure is provided. The method comprises preparing a target substrate, and forming the graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function.

Graphene structure forming method and graphene structure forming apparatus

There is provided a method for manufacturing graphene. The method includes an adsorption step of causing six-membered ring structures of carbon atoms to be adsorbed to a surface of a substrate; and an irradiation step of irradiating the surface of the substrate with a beam of a molecule containing carbon atoms.

Method for manufacturing graphene and apparatus for manufacturing graphene

There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NHgas and Hgas as reduction gases to partially fill the recess. The method further includes annealing the substrate to make the Ni film on the surface of the substrate and on a side surface of the recess reflow into the recess.

Manufacturing method of nickel wiring

Embodiments of the invention describe methods for selective vertical growth of dielectric material on a dielectric substrate. According to one embodiment, the method includes providing a planarized substrate containing a first material having a recessed feature that is filled with a second material, selectively depositing a graphene layer on the second material relative to the first material, selectively depositing a SiOfilm on the first material relative to the graphene layer, and removing the graphene layer from the substrate. According to one embodiment, the first material includes a dielectric material and the second material includes a metal layer.

Method of selective vertical growth of a dielectric material on a dielectric substrate

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Nirasaki, Japan

Takashi Matsumoto