Fujitsu Corporation

Taiyo Yuden Co., Ltd.

Fujitsu Media Devices Limited

Canon Kabushiki Kaisha

Mitsubishi Denki Kabushiki Kaisha

Other

Casio Computer Co., Ltd.

Nec Corporation

Shiseido Company, Limited

Hitachi-lg Data Storage, Inc.

National Institute of Advanced Industrial Science and Technology

National Institute of Information and Communications Technology, Incorporated

Sega Enterprises, Ltd.

Mitsubishi Electric Engineering Company, Limited

Japan Tobacco Inc.

Takashi Matsuda

Shogo Inoue

Masanori Ueda

Yoshio Satoh

Jun Tsutsumi

Osamu Ikata

Michio Miura

Satoru Matsuda

Tokihiro Nishihara

Kazunori Inoue

Yasuyuki Nakanishi

Masafumi Iwaki

Tsutomu Miyashita

Yuichiro Yamashita

Toru Koizumi

Kentaro Nakamura

Hidekazu Takahashi

Akira Okita

Nobuhiko Sato

Shinji Taniguchi

Fumihiko Nakazawa

Satoshi Sano

Naoki Kato

Takao Morimoto

Sho Suzuki

Shoji Kono

Shin Kikuchi

Yu Arishima

Tatsunori Fujiwara

Yasuhide Iwamoto

Yuji Takahashi

Kazuhiro Watanabe

Takashi Matsui

Naoki Takahashi

Kouichi Nagai

Masahiro Ieda

Ryoto Adachi

Kei Shirahata

Seiichi Mitobe

Hidetaro Nakazawa

Mitsuo Takamatsu

Hidema Uchishiba

Jyouji Kimura

Tetsuro Nagami

Eiji Sasaki

Naohiko Obata

Kazutoshi Taniguchi

Kiichiro Murotani

Shoji Tatehata

Takashi Kuzuu

Suguru Warashina

Yuichiro Suzui

Masahiko Imai

Shigehiro Itou

Shunichi Aikawa

Hidetaka Watanabe

Osamu Kawachi

Motoaki Hara

Yoshio Sato

Shinichiro Shimizu

Satoshi Imasu

Kazunari Komenou

Koutarou Oka

Tetsurou Nagami

Toshiaki Ono

Satoshi Suzuki

Takeshi Sakashita

Nobuhiro Takeda

Yoshitaka Takahashi

Hiroyuki Hayashi

Nobuo Iizuka

Junichi Murakami

Tetsuo Saji

Takashi Katsuki

Masayuki Kitajima

Xiaoyu Mi

Seiichirou Sakai

Shinichi Matsui

Kazuhiro Matsumoto

Kouichi Harada

Shingo Iwai

Yasufumi Kaneda

Hideki Takagi

Koji Ando

Kouichi Nakagomi

Go Endo

Shokyu Gen

Hiroharu Sakai

Akihiro Okada

Taisei Irieda

Satoshi Yamaki

Eiji Mugiya

Tetsuichi Nakae

Koji Matsuda

Kazuya Akiyama

Yoshito Ikada

Takahisa Motomura

Motohide Satoh

Takeshi Matsuoka

Ryozo Suzuki

A method for preparing a cosmetic kit provides cosmetics which are customized (personalized) for each user and a cosmetic provision device which uses the kit to supply customized cosmetics. The cosmetic kit includes a plurality of cosmetic bases, and is used for customized cosmetics which are prepared by mixing the plurality of cosmetic bases in accordance with recipe information determined on the basis of user unique information. The method provides a cosmetic kit with a container containing at least two cosmetic bases selected from the plurality of cosmetic bases that is rotated at a prescribed speed, and a new-infrared measurement of the bases in the container is performed at prescribed time intervals, the time (T)required to obtain an nth measurement, in which the rate of change between the absorbance in the nth measurement and the absorbance in the previous ((n−1)th)measurement is 100%±5%, and the rate of change with respect to the absorbance in the following ((n+1)th) measurement is 100%±5%, is not more than 35 minutes.

Method for preparation of a cosmetic kit

An acoustic wave device includes: a piezoelectric substrate; electrodes sandwiching the piezoelectric substrate and exciting a thickness shear vibration in the piezoelectric substrate; and an edge region that is a region surrounding a center region of a resonance region, wherein a first region of the edge region is located on both sides of the center region in a first direction substantially parallel to a displacement direction of a thickness shear vibration, a second region of the edge region is located on both sides of the center region in a second direction substantially perpendicular to the first direction, a width of the second region is different from a width of the first region, and acoustic velocities of acoustic waves in the piezoelectric substrate in the first and second regions are less than that in the piezoelectric substrate in the center region.

Acoustic wave device, filter, and multiplexer

The first photoelectric conversion unit and the second photoelectric conversion unit each include a first semiconductor region of a first conductivity type disposed at a first depth, a second semiconductor region of a second conductivity type disposed at a second depth, a third semiconductor region of the first conductivity type disposed at a third depth, and a fourth semiconductor region of the second conductivity type disposed at a fourth depth. An impurity concentration of the second semiconductor region of the first photoelectric conversion unit and an impurity concentration of the second semiconductor region of the second photoelectric conversion unit are different at the second depth.

Photoelectric conversion apparatus and photoelectric conversion system

A lip cosmetic has a high transparency without giving unnatural whiteness and exerts a remarkable effect of ultraviolet ray protection over a broad wavelength range including the UVA and UVB regions. The lip cosmetic includes (A) at least 5% by mass of UV absorbers; wherein said (A) UV absorbers comprises (A1) at least one UV absorber selected from a group consisting of octocrylene, dimethicodiethylbenzalmalonate and diethylamino hydroxybenzoyl hexyl benzoate, and (A2) ethylhexyl methoxycinnamate; (B) a high-viscosity oil component in a range of 30% by mass to 70% by mass thereof; (C) a low-viscosity oil component in a range of 20% by mass to 40% by mass thereof, and (D) titanium dioxide and zinc oxide of which a total content is at most 0.5% by mass thereof; and wherein a sun-protection-factor (SPF) of the lip cosmetic is at least 20, and a critical wavelength thereof is at a shortest 370 nm.

Lip cosmetic

An inductor includes: a substrate; a first wiring line located on the substrate; a second wiring line located above the first wiring line and spaced from the first wiring line through an air gap, at least a part of the second wiring line overlapping with at least a part of the first wiring line in plan view; a first supporting post connecting ends of the first and second wiring lines such that a direct current conducts between the first and second wiring lines through the first supporting post; and a second supporting post provided such that the second supporting post overlaps with the second wiring line in plan view, and overlaps with the first wiring line in plan view or is surrounded by the first wiring line in plan view, the second supporting post being insulated from the first wiring line, the second supporting post supporting the second wiring line.

Inductor, filter, and multiplexer

An acoustic wave resonator includes: an IDT located on a piezoelectric substrate, including comb-shaped electrodes facing each other and including electrode fingers and a bus bar connecting the electrode fingers; a first silicon oxide film located on the electrode fingers in an overlap region where the electrode fingers overlap and having a film thickness in a part of edge regions, which correspond to both ends of the overlap region, equal to or less than that in a center region sandwiched between the edge regions; and a second silicon oxide film located on the electrode fingers, containing an element slowing an acoustic velocity in a silicon oxide film when being added to the silicon oxide film, having a concentration of the element greater than that in the first silicon oxide film, and having a film thickness in a part of the edge regions greater than that in the center region.

Acoustic wave resonator, filter, and multiplexer

To provide a power supply system to a two-dimensional communication sheet that can prevent generation of leakage power without lowering a power efficiency, there are included a two-dimensional communication sheetthat has an dielectric layer, a first conductor layercovering a rear surface of the dielectric layer, and a second conductor layercovering a front surface of the dielectric layerand composed of a mesh-shaped wiring pattern; and a power supply portfor supplying power to the two-dimensional communication sheet, the power supply porthaving a first power supply plateprovided separately at a rear side of the first conductor layer, a second power supply plateprovided at a position opposite to the first power supply plateseparately at a front side of the second conductor layer, a first power supply bodyelectrically connected with the first power supply plate, and a second power supply bodyelectrically connected with the second power supply plate

System for supplying electric power to two-dimensional communication sheet, and feeding port

An acoustic wave resonator includes: a piezoelectric substrate that is a lithium tantalate substrate or a lithium niobate substrate and has a thickness of 20 &#x3bc;m or less; a support substrate that has an upper surface bonded with a lower surface of the piezoelectric substrate And is a glass substrate mainly composed of silicon oxide; a plurality of electrode fingers that are located on an upper surface of the piezoelectric substrate, excite an acoustic wave, and include a metal film mainly composed of at least one of Cr, Mo, and W.

An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes comb-shaped electrodes facing each other, each of the comb-shaped electrodes having grating electrode and a bus bar connected to the grating electrodes, a duty ratio of grating electrodes of the comb-shaped electrodes in a center region of an overlap region differing from a duty ratio of grating electrodes of the comb-shaped electrodes in an edge region of the overlap region in an arrangement direction of the grating electrodes, the grating electrodes of each of the comb-shaped electrodes overlapping with the grating electrodes of the other in the overlap region, a grating electrode of a first one of the comb-shaped electrodes in the center region having a different width from a grating electrode of a second one of the comb-shaped electrodes in the center region.

An acoustic wave device fabrication method includes: forming on a piezoelectric substrate a comb-shaped electrode and a wiring layer coupled to the comb-shaped electrode; forming on the piezoelectric substrate a first dielectric film having a film thickness greater than those of the comb-shaped electrode and the wiring layer, covering the comb-shaped electrode and the wiring layer, and being made of silicon oxide doped with an element or undoped silicon oxide; forming on the first dielectric film a second dielectric film having an aperture above the wiring layer; removing the first dielectric film exposed by the aperture of the second dielectric film by wet etching using an etching liquid causing an etching rate of the second dielectric film to be less than that of the first dielectric film so that the first dielectric film is left so as to cover an end face of the wiring layer and the comb-shaped electrode.

Method of fabricating acoustic wave device

An acoustic wave device includes: a piezoelectric substrate; and a pair of comb-shaped electrodes that is located on the piezoelectric substrate, includes a metal film, and excites a surface acoustic wave, the metal film being mainly composed of a metal having a melting point equal to or higher than a melting point of Pt, the metal film having a first region in which a crystal grain has a columnar shape and a second region that is located on and/or under the first region in a stacking direction and has less crystallinity than the first region or has an amorphous structure.

An electronic component includes: a first substrate; a second substrate that includes a functional element formed on a lower surface of the second substrate, the second substrate being mounted on the first substrate so that the functional element faces an upper surface of the first substrate across an air gap; and an insulating film that is located on the upper surface of the first substrate, overlaps with at least a part of the functional element in plan view, faces the functional element across the air gap, and has a film thickness that is more than half of a distance between a lower surface of the functional element and the upper surface of the first substrate.

Electronic component with two substrates enclosing functional element and insulating film therein

A photoelectric conversion apparatus includes a photoelectric conversion unit having a light incident surface and including: a first electrode; a second electrode disposed further toward the light incident surface; and a photoelectric conversion layer disposed between the first and second electrodes. The photoelectric conversion apparatus includes a member in contact with the photoelectric conversion layer and constituting a light guide together with the layer. An area of a first surface parallel to the light incident surface at a portion of the photoelectric conversion layer surrounded by the member is smaller than an area of a second surface disposed between the first surface and the second electrode at a portion of the photoelectric conversion layer surrounded by the member, and an area of orthogonal projection to the light incident surface of the first electrode is smaller than an area of orthogonal projection to the light incident surface of the second surface.

Photoelectric conversion apparatus and image pickup system

A multiplexer includes: a first filter including a series resonator connected in series and a parallel resonator connected in parallel between a common terminal and a first terminal, each of the series resonator and the parallel resonator including an IDT located on a piezoelectric substrate, first and second regions being alternately located in an extension direction of electrode fingers, which excite an acoustic wave, within an overlap region of the IDT in which the electrode fingers overlap, a width of at least one of the electrode fingers in the second region being greater than that in the first region, one or some resonators of the parallel resonator and the series resonator having a larger number of the second regions than a remaining resonator; and a second filter connected between the common terminal and a second terminal and having a passband higher than a passband of the first filter.

Multiplexer

An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes first regions and second regions alternately arranged in an extension direction of electrode fingers, which excite an acoustic wave, in an overlap region in which the electrode fingers overlap, at least one electrode finger of the electrode fingers in the second regions having a different width from the at least one electrode finger in the first regions, a width of an outer second region of the second regions in the extension direction differs from a width of an inner second region of the second regions.

Growing community of inventors

Kawasaki, Japan

Takashi Matsuda