Mitsubishi Electric Corporation

Takashi Masuhara

Takeshi Horiguchi

Yasushige Mukunoki

Mamoru Kamikura

Kodai Katagiri

A drive circuit for a power semiconductor element includes a voltage clamp circuit connected between a first main electrode and a control electrode and a second turn-off circuit including a capacitive element and a switching element connected in series between the control electrode and a second main electrode and a resistive element connected in parallel to the capacitive element. A turn-off control circuit switches the switching element in the second turn-off circuit to on when a voltage across the first main electrode and the second main electrode increases after start of turn-off of the power semiconductor element.

Drive circuit to drive power semiconductor element, power semiconductor module, and power conversion device

A drive circuit includes: a signal generation circuit; a comparator; a comparator; and a short circuit determination unit. The signal generation circuit is configured to generate, as an output signal, a differential amplification signal of a voltage detection signal indicating a gate voltage of a semiconductor element and a delay signal of the voltage detection signal. The comparator is configured to compare a value of the differential amplification signal with a first reference voltage value. The comparator is configured to compare a voltage value indicating a gate current with a second reference voltage value. The short circuit determination unit is configured to determine whether or not the semiconductor element is in a short-circuited state, based on a result of comparison by each of the comparators, and generate a determination signal indicating a determination result.

Drive circuit for semiconductor element

A drive circuit for a power semiconductor element according to the present disclosure includes: a control command unit that outputs a turn-on command for a power semiconductor element; a gate voltage detection unit that detects a gate voltage applied to a gate terminal after the control command unit outputs the turn-on command; a differentiator that subjects the gate voltage detected by the gate voltage detection unit to time differentiation; and a determination unit that determines, based on the gate voltage detected by the gate voltage detection unit and a differential value by the differentiator, whether the power semiconductor element is in a short-circuit state or not.

Drive circuit for power semiconductor element

A semiconductor device includes a positive electrode-side semiconductor element, a negative electrode-side semiconductor element, a positive electrode plate, a negative electrode plate, an AC electrode plate, a positive electrode-side auxiliary electrode terminal, a negative electrode-side auxiliary electrode terminal, a positive electrode-side capacitor, and a negative electrode-side capacitor. The positive electrode plate is connected to a first positive electrode of the positive electrode-side semiconductor element. The negative electrode plate is connected to a second negative electrode of the negative electrode-side semiconductor element. The AC electrode plate is connected to a first negative electrode of the positive electrode-side semiconductor element and a second positive electrode of the negative electrode-side semiconductor element. The positive electrode-side capacitor is connected to the positive electrode plate and the positive electrode-side auxiliary electrode terminal. The negative electrode-side capacitor is connected to the negative electrode plate and the negative electrode-side auxiliary electrode terminal.

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Chiyoda-ku, Japan

Takashi Masuhara