Seiko Epson Corporation

Toyota Jidosha Kabushiki Kaisha

Japan Science and Technology Agency

Japan Advanced Institute of Science and Technology

Takashi Masuda

Hideki Tanaka

Ichio Yudasaka

Tatsuya Shimoda

Katsuyuki Morii

Takashi Aoki

Hiroshi Takiguchi

Masayoshi Todorokihara

Hitoshi Fukushima

Yasuo Matsuki

Shingo Ohta

Makoto Kato

Toshiya Saito

Richard James Bushby

Kevin Critchley

Stephan Evans

Jp Jeyadevan

An oxide all-solid-state battery excellent in lithium ion conductivity and joint strength between an anode active material layer and solid electrolyte layer thereof. In the oxide all-solid-state battery, the solid electrolyte layer is a layer mainly containing a garnet-type oxide solid electrolyte sintered body represented by the following formula (1): (Li, E, H)LMO; a solid electrolyte interface layer is disposed between the anode active material layer and the solid electrolyte layer; the solid electrolyte interface layer contains at least a Si element and an O element; and a laminate containing at least the anode active material layer, the solid electrolyte interface layer and the solid electrolyte layer has peaks at positions where 2&#x3b8;=32.3&#xb0;&#xb1;0.5&#xb0;, 37.6&#xb0;&#xb1;0.5&#xb0;, 43.8&#xb0;&#xb1;0.5&#xb0;, and 57.7&#xb0;&#xb1;0.5&#xb0; in a XRD spectrum obtained by XRD measurement using CuK&#x3b1; irradiation.

Oxide all-solid-state battery

A composition containing a high order silane compound and a solvent, wherein the solvent contains a cyclic hydrocarbon which has one or two double bonds and no alkyl group, is composed of only carbon and hydrogen and has a refractive index of 1.40 to 1.51, a specific permittivity of not more than 3.0 and a molecular weight of not more than 180. Method of manufacturing a film-coated substrate using the high order silane composition.

High order silane composition and method of manufacturing a film-coated substrate

A method for manufacturing a semiconductor device includes: forming a source electrode and a drain electrode on a substrate; forming an organic semiconductor layer including a &#x3c0; conjugated organic compound at least between the source electrode and the drain electrode; applying an application liquid on the organic semiconductor layer, the application liquid being made of a polymer of an alicyclic compound dissolved in a paraffin hydrocarbon solvent that is a carbocyclic compound without having aromaticity; forming a gate insulation layer including the polymer of the alicyclic compound by removing the paraffin hydrocarbon solvent from the application liquid; and forming a gate electrode on the gate insulation layer.

Method for manufacturing semiconductor device, semiconductor device, semiconductor circuit, electro-optical device, and electronic apparatus

A higher order silane composition, includes: a higher order silane compound; and a solvent containing one of a substituted hydrocarbon based solvent and an unsubstituted hydrocarbon based solvent. As the solvent, a solvent having a refractive index of 1.53 or more is selected so that the higher order silane compound is dissolved therein.

Higher order silane composition, method for manufacturing film-coated substrate, electro-optical device and electronic device

An electric device includes: a pair of electrodes, an organic semiconductor film and an organic film formed on a surface of at least one of the electrodes, wherein the organic this film includes a nonconjugated organic compound having a plurality of coupling groups coupled with the electrodes.

Electric device, method of manufacturing electric device and electric apparatus

A droplet information measuring method includes a preparation step of preparing a discharge head for discharging droplets, a measurement step of depositing a plurality of the droplets in series at predetermined intervals, and measuring a drying times of the plurality of droplets, and a calculation step of repeating the measurement step while varying the intervals of the plurality of droplets, and calculating a vapor diffusion distance of the droplets based upon the measurement results.

Droplet information measuring method and apparatus therefor, film pattern forming method, device manufacturing method, droplet discharge apparatus, electro-optical apparatus, and electronic apparatus

An organic semiconductor composition comprises: an organic semiconductor material having a structural unit including at least one thiophene ring as a repeating unit; and an organic solvent including cis-decalin.

Organic semiconductor composition containing cis-decalin

A liquid material is placed on a substrate as a droplet to form a film on the substrate. At least either one of a concentration of solids in the liquid material and a drying rate of the droplets is used as a parameter to control a form of a dried film of the droplets. Moreover, a first droplet is placed on a substrate, the first droplet is dried to form a dried film of a form in which a thickness of an edge is larger than that of a central part, and a second droplet is placed in a region surrounded by the edge section of a dried film of the first droplet to form a dried film of the second droplet. Furthermore, the liquid material is placed on the substrate as a droplet to form a film on the substrate, and a dried film of the droplet is formed by contracting the droplet.

Process for forming a film, process for manufacturing a device, electro-optical device and electronic equipment

A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.

Method of manufacturing transistor, method of manufacturing electro-optical device, and method of manufacturing electronic device

An etching method of the invention includes arranging droplets including a film-forming material on a substrate, drying each of the droplets to form a dry film having a width smaller than the diameter of each droplet at the time of the arrangement, and performing etching while using the dry film as an etching protective film.

Method of manufacturing a wiring substrate, method of manufacturing an electro-optical device, method of manufacturing an electronic apparatus

An electronic device including: a pair of electrodes; an organic semiconductor layer; and an organic film formed of organic compounds including nonconjugated organic compounds coupled to at least one of surfaces of the pair of electrodes.

Electronic device, method of manufacturing an electronic device, and electronic apparatus

Provided is a method for forming a film by which a highly accurate film pattern can easily be formed out of droplets. The method includes forming linear droplets on a surface of a substrate, providing a temperature gradient onto surfaces of the linear droplets, and forming a dry film including a straight part at an end section of the linear droplets. In order to provide a temperature gradient onto surfaces of the linear droplets, the substrate, on which the droplet is sprayed, is bridged between a hot plate and cooling plate.

Method of forming a film with linear droplets and an applied temperature gradient

Aspects of the invention provide a method of controlling the solid-state property of the solid-phase surface or controlling forming reactive region. The method can be attained by using a device for ejecting droplets and a molecule for inclusion in a SAM which can be photo-patterned in a short period of time using low energy UV radiation, that is TV radiation having a relatively long wavelength. The invention can provide monomolecular film that is formed from molecules comprising a structural component (B) which is hydrophobic and/or lipophobic, and a structural component (A) which decomposes when irradiated with UV light having a wavelength in the range 254-400 nm to cleave away a part of the molecule having the structural component (B) leaving a residual hydrophilic structural component (C). Further, the invention can provide a method of forming a film pattern comprising; at least a step of ejecting a droplet, which includes a compound represented as the following Formula (0), on a solid-phase surface having a functional moiety:X&#x2014;Y-Z &#x2003;&#x2003;(0)where, X represents a structure having reactivity to a functional moiety which exists at the solid-phase surface, Y represents a decomposable structure by itself and Z represents a structure which is capable of changing solid-state properties on the solid-phase surface or a reactive structure.

Growing community of inventors

Suwa, Japan

Takashi Masuda