Sumitomo Electric Industries, Limited

Sony Corporation

Riken Corporation

Other

Takashi Kyono

Yohei Enya

Masaki Ueno

Katsushi Akita

Yusuke Yoshizumi

Takamichi Sumitomo

Takao Nakamura

Masahiro Adachi

Shinji Tokuyama

Koji Katayama

Takatoshi Ikegami

Katsunori Yanashima

Hiromi Nakanishi

Hiroshi Nakajima

Kei Fujii

Kunihiko Tasai

Shimpei Takagi

Suguru Arikata

Kaoru Shibata

Tetsuya Kumano

Shinya Ito

Koji Nishizuka

Hideki Hirayama

Noriyuki Futagawa

Hitoshi Kasai

Hideyuki Ijiri

Kuniaki Ishihara

Keiji Ishibashi

Tatsushi Hamaguchi

Yoshihiro Saito

Kazuhide Sumiyoshi

Nobuhiro Saga

Takuma Fuyuki

Takahisa Yoshida

Seiji Nakahata

Kensaku Motoki

Makoto Kiyama

Akihiro Hachigo

Takashi Matsuura

Hiroyuki Kitabayashi

Yoshiki Miura

Masahiro Nakayama

Susumu Yoshimoto

Toshio Ueda

Eiryo Takasuka

Hideki Osada

Kouhei Miura

Yuji Furushima

Takumi Yonemura

An optical module includes a light-forming unit configured to form light, and a protective member surrounding and sealing the light-forming unit. The light-forming unit includes a laser diode, a first MEMS including a first mirror having a first reflective surface that reflects and scans light from the laser diode, the first mirror oscillating to form a first plane, and a second MEMS including a second mirror having a second reflective surface that reflects and scans light from the first mirror, the second mirror oscillating to form a second plane orthogonal to the first plane.

Optical module

An optical module includes a light-forming unit to form light. The light-forming unit includes a base member having an electronic temperature control module, a base plate, a plurality of submounts, and a microelectromechanical system (MEMS) base. The light-forming unit also includes a plurality of laser diodes arranged on the submounts, a filter arranged on the base plate and located to receive the light emitted from the plurality of laser diodes and multiplex the emitted light, a MEMS arranged on the MEMS base and located to receive the light multiplexed by the filter. The MEMS includes a scanning mirror to scan the light multiplexed by the filter, and the electronic temperature control module regulates a temperature range of the MEMS. The light-forming unit also includes a protective member surrounding and sealing the light-forming unit, which includes a base body and a lid welded to the base body.

A mirror driving mechanism includes a plate-shaped base portion, a mirror that is installed at the base portion, and a temperature detecting section that is installed at the base portion and that detects a temperature of the base portion. The base portion includes a thin portion that is disposed away from an outer edge of the base portion and that has a through hole extending through the base portion in a plate-thickness direction of the base portion, a thick portion that is connected to the thin portion, that is thicker than the thin portion in the plate-thickness direction of the base portion, and that extends along the outer edge so as to surround the thin portion, and a first shaft portion extends into the through hole from an outer periphery of the through hole.

Mirror driving mechanism and optical module

An optical module includes a light-forming unit configured to form light, and a protective member surrounding and sealing the light-forming unit. The light-forming unit includes a base member including an electronic temperature control module, a plurality of laser diodes arranged on the base member, a filter arranged on the base member and configured to multiplex light from the plurality of laser diodes, a beam shaping portion arranged on the base member and configured to convert a beam shape of the light multiplexed by the filter, and a MEMS arranged on the base member and including a scanning mirror configured to scan the light shaped in the beam shaping portion. The protective member includes a base body, and a lid welded to the base body.

An optical moduleaccording to an embodiment includes a plurality of laser diodes (LDs)to, a multiplexing optical systemcombining a plurality of laser beams from the respective plurality of LDs, and a packageaccommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.

Optical module and method for manufacturing the optical module

A semiconductor layer includes a first semiconductor layer containing a III-V group compound semiconductor and having a first conductivity type, a quantum-well structure containing a III-V group compound semiconductor, a second semiconductor layer containing a III-V group compound semiconductor, a third semiconductor layer containing a III-V group compound semiconductor, and a fourth semiconductor layer containing a III-V group compound semiconductor and having a second conductivity type different from the first conductivity type. The first semiconductor layer, the quantum-well structure, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer are stacked in this order. The concentration of an impurity that generates carriers of the second conductivity type is lower in the third semiconductor layer than in the fourth semiconductor layer. The concentration of an impurity that generates majority carriers in the second semiconductor layer is lower in the third semiconductor layer than in the second semiconductor layer.

Semiconductor laminate and light-receiving element

A semiconductor stack includes a first-conductivity-type layer of a first conductivity type, the first-conductivity-type layer being formed of a III-V compound semiconductor; a quantum well light-receiving layer formed of a III-V compound semiconductor; and a second-conductivity-type layer of a second conductivity type different from the first conductivity type, the second-conductivity-type layer being formed of a III-V compound semiconductor. The first-conductivity-type layer, the quantum well light-receiving layer, and the second-conductivity-type layer are stacked in this order. The quantum well light-receiving layer has a thickness of 0.5 &#x3bc;m or more. The quantum well light-receiving layer has a carrier concentration of 1&#xd7;10cmor less.

Semiconductor stack, light-receiving device, and method for producing semiconductor stack

An optical module includes a transmitting member. The transmitting member is fixed to a cap member so as to cover a through-hole. On the assumption that the height of one point on a first surface in a state in which the transmitting member is detached from the cap member is zero and the direction toward the outside of the optical module is a positive direction, the amount of warp that is a difference between the displacement at the central point and the displacement at a standard point, on the first surface, corresponding to a reference point, on the projection image, away from a center of gravity by a particular distance is different between a first geodesic line and a second geodesic line, the displacement being a height of the one point in a direction of the optical axis in a state in which the transmitting member is fixed to the cap member. The transmitting member is joined to the cap member at the first surface or the second surface.

A semiconductor stack includes a substrate composed of a III-V group compound semiconductor, a buffer layer that is arranged on the substrate and that is composed of a III-V group compound semiconductor, and an active layer that is arranged on the buffer layer and that includes a layer composed of a III-V group compound semiconductor containing Sb as a group V element. A region of the buffer layer including a main surface of the buffer layer adjacent to the substrate includes a high-concentration region having a high total concentration of Si and C compared with another adjacent region.

Semiconductor stack and semiconductor device

A semiconductor layered structure includes a substrate formed of a III-V compound semiconductor, a buffer layer disposed on and in contact with the substrate and formed of a III-V compound semiconductor, and a quantum well layer disposed on and in contact with the buffer layer and including a plurality of component layers formed of III-V compound semiconductors. The substrate has a diameter of 55 mm or more. At least one of the component layers is formed of a mixed crystal of three or more elements. When the compound semiconductor forming the substrate has a lattice constant d, the compound semiconductor forming the buffer layer has a lattice constant d, and the compound semiconductors forming the quantum well layer have an average lattice constant d, (d&#x2212;d)/dis &#x2212;3&#xd7;10or more and 3&#xd7;10or less, and (d&#x2212;d)/dis &#x2212;3&#xd7;10or more and 3&#xd7;10or less.

Semiconductor layered structure, method for producing semiconductor layered structure, and method for producing semiconductor device

An optical moduleaccording to an embodiment includes a plurality of laser diodes (LDs)to, a multiplexing optical systemcombining a plurality of laser beams from the respective plurality of LDs, and a packageaccommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more thannm. The package has an internal moisture content of not more thanppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.

An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5&#xd7;10cm.

Epitaxial wafer and method for manufacturing same

A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer.

Semiconductor element and method for producing the same

In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5&#xd7;10atoms/cmor lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.

Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor device

A Group III nitride semiconductor device comprises: a Group III nitride semiconductor layer having a primary surface, inclined with respect to a c-plane of the Group III nitride semiconductor at an angle in a range of 50 degrees or more and 80 degrees or less, of a Group III nitride semiconductor; a p-type Group III nitride semiconductor laminate including first to third p-type Group III nitride semiconductor layers, the first to third p-type Group III nitride semiconductor layers being provided on the primary surface of the Group III nitride semiconductor layer, the first and third p-type Group III nitride semiconductor layers sandwiching the second p-type Group III nitride semiconductor layer such that the second p-type Group III nitride semiconductor layer incorporates strain; and an electrode provided on the p-type Group III nitride semiconductor laminate. The electrode is in contact with the first p-type Group III nitride semiconductor layer.

Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device

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Itami, Japan

Takashi Kyono