Canon Kabushiki Kaisha

Takashi Kurokawa

Masahiro Kanai

Masafumi Sano

Yasushi Fujioka

Takehito Yoshino

Yuzo Kohda

Kyosuke Ogawa

Hiroshi Echizen

Yasutomo Fujiyama

Osamu Kamiya

Akio Koganei

Shuichiro Sugiyama

Kazumasa Takatsu

Toshio Adachi

A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.

Microwave plasma processing apparatus

An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. An enough long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semiconductor layer of a conductivity type which is needed in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.

Method for continuously manufacturing a semiconductor device

An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. A sufficiently long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semi-conductor layer of a conductivity type in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.

Glow discharge apparatus for continuously manufacturing semiconductor

A process for producing a photoconductive member by introducing starting gases while heating a support to form a thin film having photoconductivity thereon in sequential steps comprises introducing a support into a chamber, heating the support to a desired temperature under reduced pressure, reacting the substrate with starting gases to form a thin film having photoconductivity thereon, cooling the substrate having a thin film and removing product support out of the chamber, these steps being carried out in sequential chamber throughout the steps, and an apparatus for producing the same.

Process for producing photoconductive member and apparatus for producing

A process for forming deposited film of an element or a compound on a substrate provided in a deposition chamber while applying an energy selected from the group consisting of thermal energy, electrodischarging energy and optical energy, characterized by cooling the electrode or both electrode and inner wall of a deposition chamber, which are opposed to the substrate.

Process for forming deposited film

A vacuum processing apparatus for applying a vacuum working process to a substrate to be processed by a plurality of processing steps comprises vacuum containers exclusively for use for processing disposed in place for each of the processing steps, and a vacuum container exclusively for use for conveyance movable between the vacuum containers exclusively for use for processing. The vacuum containers are provided with opening-closing gates which can be connected to each other. The substrate to be processed is transferably movable between the vacuum containers exclusively for use for processing and the vacuum container exclusively for use for conveyance.

Vacuum processing apparatus

An exhaust system comprising an exhaust device and a collecting device incorporating a filter and positioned in front of the exhaust device, the exhaust system being adapted for use in a chemical vapor deposition apparatus, wherein at least a part of the collecting device is heated.

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Kawasaki, Japan

Takashi Kurokawa