University of Tsukuba

Nippon Sanso Corporation

Takashi Kuroiwa

Sosaku Ichikawa

Toshiyuki Aida

Hideki Seki

Satoshi Hasaka

Kenji Shigeta

Tomoaki Hoshi

A vesicle is produced by: a step of producing a W/O emulsion from an aqueous solution containing a substance to be entrapped in a vesicle in a dissolved or suspended state and an organic solvent phase containing a lipid having emulsification capacity, which can constitute the vesicle; a step of producing a W/O/W emulsion from the W/O emulsion and an external water phase solution of a water-soluble emulsifier, which does not destroy a vesicle lipid membrane; and a step of removing the organic solvent phase from the W/O/W emulsion, so as to form a vesicle. This method simultaneously achieves a high entrapment yield of an active ingredient and the control of a particle diameter.

Method for producing vesicle, vesicle obtained by the production method, and W/O/W emulsion for producing vesicle

A W/O emulsion is produced from an aqueous solution containing a substance to be entrapped in a vesicle in a dissolved or suspended state and an oil phase containing an emulsifier; subsequently, the W/O emulsion is cooled to a temperature at which the aqueous solution of the W/O emulsion becomes a frozen particle and the oil phase maintains a liquid state, and the oil phase is removed; thereafter, an oil phase containing a vesicle constituent lipid is added to the frozen particle, and the obtained mixture is then stirred, so as to substitute the emulsifier on the surface of the frozen particle with the vesicle constituent lipid; and thereafter, an external Water phase is added to the frozen particle coated with a lipid membrane, so as to hydrate the lipid membrane by the external water phase. This process achieves a high entrapment yield of a desired substance while controlling desired physical properties such as particle diameter.

Method for producing vesicle, vesicle obtained by the production method, and method for producing frozen particle used in production of vesicle

An apparatus for supplying a semiconductor process gas charged in a large-capacity gas vessel to a plant where the gas is used, after reduction of the pressure of the gas. The gas cylinder is composed essentially of a cylindrical portion and hemispherical portions and formed at the ends of the cylindrical portion respectively. The gas cylinder has a gas charge port at one hemispherical portion and a gas discharge port at the other hemispherical portion both of which opening in alignment with the axis of the cylindrical portion . A charge valve and a gas discharge unit having at least a gas vessel valve and a pressure reducing valve are connected to the gas charge port and the gas discharge port respectively. The gas cylinder is housed together with the charge valve and the gas discharge unit in a container

Feed device for large amount of semiconductor process gas

Growing community of inventors

Tokyo, Japan

Takashi Kuroiwa