Sharp Kabushiki Kaisha Corporation

Takashi Kurisu

Toshio Hata

Katsuji Iguchi

Takashi Ono

Hiroaki Onuma

Tsuyoshi Ono

Hiroyoshi Higashisaka

Yuhsuke Fujita

Susumu Ohmi

Masumi Maegawa

Masayuki Nagata

A semiconductor module includes a ground substrate that is provided with a drive circuit, and a plurality of light emitting elements that are electrically coupled to the drive circuit, in which a distance between the light emitting elements adjacent to each other is equal to or less than 20 &#x3bc;m in a top view.

Semiconductor module, display apparatus, and semiconductor module manufacturing method

A semiconductor module includes a base substrate; a plurality of light emitting elements; a plurality of color conversion layers being in contact with each upper portion of the plurality of light emitting elements adjacent to each other; and a light shielding layer disposed between the plurality of light emitting elements adjacent each other and between the color conversion layers adjacent to each other, and separating the plurality of light emitting elements and a plurality of color conversion layers.

Semiconductor module, display device, and semiconductor module production method

In a micro light emitting element, a first metal film electrically connected to a second conductive layer is disposed on a surface on an opposite side of a light emitting surface side. The first metal film covers the second conductive layer. A first inclined angle of a first conductive layer side surface from a slope formed around a light emission layer to the light emitting surface is larger than a second inclined angle of the slope. The slope and the first conductive layer side surface are covered together by a second metal film. A first transparent insulating film is disposed between the slope and the second metal film.

Image display element

A nitride semiconductor light emitting elementincludes a second conductivity type nitride semiconductor layer which is formed above a first conductivity type nitride semiconductor layer, a first electrodewhich is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layerin between, a first current diffusing layerwhich is formed between the first current non-injection layerand the first electrode, a second electrodewhich is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layerin between, a second current diffusing layerwhich is formed on the second region and on the second current non-injection layer, and an extending portionwhich extends from the first electrodeand reaches the exposed first conductivity type nitride semiconductor layer.

Nitride semiconductor light emitting element

Growing community of inventors

Sakai, Japan

Takashi Kurisu