Kaneka Corporation

Takashi Kuchiyama

Kenji Yamamoto

Hironori Hayakawa

Kunta Yoshikawa

Hiroaki Ueda

Daisuke Adachi

Kunihiro Nakano

Shinya Omoto

Yuji Motohara

Toshihiko Uto

Katsunori Konishi

Mitsuru Ichikawa

Tomomi Meguro

Ryota Mishima

Takahisa Fujimoto

Tooru Irie

Fumiyasu Sezaki

A transparent electrode-equipped substrate includes, on a film base material having a transparent film substrate, a non-crystalline transparent foundation oxide layer and a non-crystalline transparent conductive oxide layer. The transparent electrode-equipped substrate is capable of achieving low resistivity by having the transparent oxide layers being formed sequentially from the film base material side through sputtering such that the absolute value of a discharge voltage (V) of a direct-current (DC) power supply when forming the transparent foundation oxide layer is 255-280 V, the ratio (V/V) between the discharge voltage (V) of the DC power supply when forming the transparent foundation oxide layer and the discharge voltage Vof the DC power supply when forming the transparent conductive oxide layer is 0.86-0.98.

Transparent electrode-equipped substrate and production method therefor

A photoelectric conversion element for detecting the spot size of incident light. The photoelectric conversion element includes a photoelectric conversion substrate having two principal surfaces, and comprises a first sensitive part and a second sensitive part that have mutually different photoelectric conversion characteristics. When a sensitive region appearing in the principal surface of the first sensitive part is defined as a first sensitive region, and a sensitive region appearing in the principal surface of the second sensitive part is defined as a second sensitive region, the first sensitive region is configured to receive at least a portion of light incident on a light-receiving surface and to decrease, proportionally to enlargement in an irradiation region of the principal surface irradiated with the incident light, the ratio of the first sensitive region to the second sensitive region in the irradiation region.

Photoelectric conversion element and photoelectric conversion device

A photovoltaic device according to the present disclosure includes: a first-conductivity-type semiconductor film provided on a back side of a semiconductor substrate; a second-conductivity-type semiconductor film in which at least a part thereof is provided in a position different, in plan view, from a position of the first-conductivity-type semiconductor film on the back side of the semiconductor substrate; a protective film, which is formed on a back side of the first-conductivity-type semiconductor film and a back side of the second-conductivity-type semiconductor film, and which includes a conductive portion and a non-conductive transformed portion; and an electrode film formed on a back side of the conductive portion. The transformed portion of the protective film is provided along a conduction path between a back surface of the first-conductivity-type semiconductor film and a back surface of the second-conductivity-type semiconductor film.

Photovoltaic device and method for manufacturing photovoltaic device

A patterning sheet, or the like, is suitable when a complex etching target is to be etched in a simple manner to produce an etched structure. This patterning sheet comprises a base sheet formed from an etching-solution permeable first polymer, and particles dispersed in the base sheet and formed from a second polymer, which absorbs and holds the etching solution.

Patterning sheet and etched structure production method

The method for manufacturing a solar cell includes: forming a first semiconductor layer of first conductivity type on a surface of a semiconductor substrate; forming a lift-off layer containing a silicon-based material on the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of second conductivity type on a surface having the lift-off layer and first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution. The linear expansion coefficients of the semiconductor substrate and the lift-off layer satisfy the relational expression: the linear expansion coefficient of the lift-off layer &#x3c;the linear expansion coefficient of the semiconductor substrate, and the forming of the second semiconductor layer or the removing of the second semiconductor layer is performed at a temperature higher than the temperature in the forming of the lift-off layer.

Method for manufacturing solar cell

A photoelectric conversion element for detecting the spot size of incident light. The photoelectric conversion element includes a photoelectric conversion substrate having two principal surfaces, and the substrate includes a first sensitivity part and a second sensitivity part that are separated from each other. When a sensitivity area appearing on the principal surface of the first sensitivity part is defined as a first sensitivity area and a sensitivity area appearing on the principal surface of the second sensitivity part is defined as a second sensitivity area, the first sensitivity area receives at least a portion of incident light incident on a light receiving surface, and a pattern is formed such that an increase in an irradiation area of the principal surface irradiated with the incident light reduces the ratio of the first sensitivity area to the second sensitivity area in the irradiation area.

Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization dining a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Substrate with transparent electrode and method for producing same

A substrate with a transparent electrode which includes an amorphous transparent electrode layer on a transparent film substrate. When a bias voltage of 0.1 V is applied to the amorphous transparent electrode layer, the layer has continuous regions where a current value at a voltage-applied surface is 50 nA or more. Each of the continuous regions has an area of 100 nmor more and the number of the continuous regions is 50/&#x3bc;mor more. In one embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. With respect to the substrate with a transparent electrode according to the present invention, the transparent electrode layer may be crystallized in a short period of time.

Substrate with transparent electrode and method for manufacturing same

Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization during a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

A transparent electrode-equipped substrate includes a metal oxide transparent electrode layer on a transparent substrate. The average maximum curvature Ssc of the surface of the transparent electrode layer is preferably 5.4&#xd7;10nmor less. For example, if the transparent electrode layer is subjected to a surface treatment by low discharge-power sputtering after deposition, the Ssc of the transparent electrode layer can be reduced. This transparent electrode-equipped substrate excels in close adhesion between the transparent electrode layer and a lead-out wiring line disposed on the transparent electrode layer. The transparent electrode layer is obtained by, for example, performing a transparent electrode deposition step of through the application of a first discharge power and then performing a surface treatment step through the application of a second discharge power.

Transparent electrode-equipped substrate and method for producing transparent electrode-equipped substrate

A resin substrate with a transparent electrode having a low resistance, and a manufacturing method thereof including: a deposition step wherein a transparent electrode layer of indium tin oxide is formed on a transparent film substrate by a sputtering method, and a crystallization step wherein the transparent electrode layer is crystallized. In the deposition step, a sputtering deposition is performed using a sputtering target containing indium oxide and tin oxide, while a sputtering gas containing argon and oxygen is introduced into a chamber. It is preferable that an effective exhaust rate S, calculated from a rate Q of the sputtering gas introduced into the chamber and a pressure P in the chamber by a formula S (L/second)=1.688&#xd7;Q (sccm)/P (Pa), is 1,200-5,000 (L/second). It is also preferable that a resistivity of the transparent electrode layer is less than 3&#xd7;10&#x3a9;cm.

Method for producing substrate with transparent electrode, and substrate with transparent electrode

A substrate with a transparent electrode which includes an amorphous transparent electrode layer on a transparent film substrate. When a bias voltage of 0.1 V is applied to the amorphous transparent electrode layer, the layer has continuous regions where a current value at a voltage-applied surface is 50 nA or more. Each of the continuous regions has an area of 100 nmor more and the number of the continuous regions is 50/&#x3bc;mor more. In one embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. In another embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. With respect to the substrate with a transparent electrode according to the present invention, the transparent electrode layer may be crystallized in a short period of time.

A transparent electroconductive film includes a transparent electrode layer on a transparent film substrate. The transparent electrode layer is formed of an amorphous indium tin composite oxide and has a tin oxide content of 3 to 12% by mass and a thickness of 15 to 30 nm. In an analysis range of the transparent electrode layer, a bond energy Eof tin 3dand a bond energy Eof indium 3das determined by X-ray photoelectron spectroscopy measurement satisfy the following requirements: a minimum point of a bond energy difference between the bond energies Eand Eis present closer to the surface of the transparent electrode layer than a maximum point of the bond energy difference E&#x2212;E; and a difference E&#x2212;Ebetween the maximum value Eand the minimum value Eof the bond energy difference is 0.1 eV or more.

Transparent conductive film and method for producing same

Provided is a transparent conductive film including a transparent electrode layer composed of a patterned thin metal wire on at least one surface of a transparent film substrate. The line width of the wire is 5 &#x3bc;m or less. The wire includes a first metal layer and a second metal layer that is in contact with the first metal layer, in this order from a transparent film substrate side. Both of the first and second metal layers contain copper in an amount of 90% by weight or more. The total film thickness of the first and second metal layers is 150 to 1000 nm. The diffraction angle 2&#x3b8; of the (111) plane of the second metal layer is less than 43.400&#xb0; as measured using a CuK&#x3b1; ray as an X-ray source, and the first metal layer has crystal properties different from those of the second metal layer.

Conductive film substrate, transparent conductive film, and method for producing transparent conductive film

In a transparent electroconductive film including a transparent substrate and a transparent electroconductive oxide layer disposed on the transparent substrate, when the transparent electroconductive oxide layer is composed of zinc oxide, the surface resistivity of the transparent electroconductive oxide layer increases with time and thus it has been difficult to obtain a transparent electroconductive film stable against an environmental variation. Consequently, hard carbon films are provided on the surfaces of a transparent electroconductive oxide layer including at least one layer and containing zinc oxide as a main component in 'the order of transparent substrate-hard carbon film-transparent electroconductive oxide layer-hard carbon film' or 'the order of hard carbon film-transparent substrate-transparent electroconductive oxide layer-hard carbon film'. Alternatively, an organosilicon compound covering layer is provided on a surface of the transparent electroconductive oxide layer. Thereby, the water contact angle can be 75 degrees or more, and an increase in the resistivity of the transparent electroconductive oxide layer can be suppressed.

Growing community of inventors

Settsu, Japan

Takashi Kuchiyama