Sony Corporation

Takashi Kubodera

Toshihiko Miyazaki

Hiroaki Ammo

Koichi Baba

Akihiro Nakamura

Kaneyoshi Takeshita

Hiroshi Nakayama

Kazuaki Takahashi

Kazuhiro Nakagomi

Kazuki Nomoto

Yukihiro Kiyota

Masayuki Ishikura

Yoshio Oguchi

The present technique relates to a semiconductor device and an electronic appliance in which the reliability of the fine transistor can be maintained while the signal output characteristic is improved in a device formed by stacking semiconductor substrates. The semiconductor device includes a first semiconductor substrate, a second semiconductor substrate providing a function different from a function provided by the first semiconductor substrate, and a diffusion prevention film that prevents diffusion of a dangling bond terminating atom used for reducing the interface state of the first semiconductor substrate and the second semiconductor substrate, wherein at least two semiconductor substrates are stacked and the semiconductor substrates are electrically connected to each other, and the first semiconductor substrate and the second semiconductor substrate are stacked with the diffusion prevention film inserted between an interface of the first semiconductor substrate and an interface of the second semiconductor substrate.

Semiconductor device and electronic appliance

An information processing device includes a first member that includes a substantially plate-shaped casing and a predetermined detection unit, a second member that includes a substantially plate-shaped casing and that holds a battery inside the second member, and a connection unit that includes an elastic body and connects a part of an outer circumferential end surface of the first member to a part of an outer circumferential end surface of the second member such that a surface direction of one surface of the first member substantially matches a surface direction of one surface of the second member. The information processing device is worn on a predetermined body part such that the one surface of the first member and the one surface of the second member are located on a side of the body part.

Information processing device

Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M&#x2267;2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1&#x2266;m&#x2266;(M&#x2212;1), to control the potentials of the light reception/charge storage layers.

Solid-state imaging element and driving method of the solid-state imaging element

An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.

Imaging apparatus and method, electronic device, and program

A solid-state image pickup element includes: (A) a light receiving/charge accumulating region formed in a semiconductor layer and formed by laminating M (where M&#x2267;2) light receiving/charge accumulating layers; (B) a charge outputting region formed in the semiconductor layer; (C) a depletion layer forming region formed of a part of the semiconductor layer, the part of the semiconductor layer being situated between the light receiving/charge accumulating region and the charge outputting region; and (D) a control electrode region for controlling a state of formation of a depletion layer in the depletion layer forming region, wherein the solid-state image pickup element further includes a light receiving/charge accumulating layer extending section extending from each light receiving/charge accumulating layer to the depletion layer forming region.

Growing community of inventors

Kumamoto, Japan

Takashi Kubodera