Tokyo Electron Limited

Takashi Kubo

Kippei Sugita

Yuki Hosaka

Yoshihiro Umezawa

Takari Yamamoto

Mayo Uda

Tomohisa Kitayama

Yuhei Shimatsu

A measurement method includes: (a) measuring an emission intensity for each wavelength of light detected from a plasma generated in a plasma processing apparatus at each different exposure time by a light receiving element; (b) specifying, with respect to each of a plurality of different individual wavelength ranges that constitutes a predetermined wavelength range, a distribution of the emission intensity in the individual wavelength range measured at an exposure time at which an emission intensity of a predetermined wavelength included in the individual wavelength range becomes an emission intensity within a predetermined range; (c) selecting a distribution of the emission intensity in the individual wavelength range from the distribution of the emission intensity specified in (b); and (d) outputting the distribution of the emission intensity selected for each individual wavelength range.

Measurement method and measurement apparatus

A calibration method of an infrared camera includes setting a placing table on which a substrate is placed to different temperatures and acquiring a measurement value of radiation amount of infrared light emitted from each of multiple zones provided in a top surface of the placing table by an infrared camera at each of the temperatures; calculating, as a calibration value, a difference between a measurement value of a reference zone which is one of the zones provided with a temperature sensor and a measurement value of another one of the zones at each of the temperatures; specifying an interpolation curve indicating a variation tendency of the calibration value with respect to the measurement value of the reference zone for each of the zones; and storing parameters of the interpolation curve specified for each of the zones.

Calibration method of infrared camera and calibration system of infrared camera

According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.

Gas supply mechanism and semiconductor manufacturing apparatus

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Miyagi, Japan

Takashi Kubo