Kabushiki Kaisha Toshiba

Takashi Koike

Yosuke Okamoto

Hiroyuki Mizuno

According to one embodiment, provided is a reflective mask having a substrate, a reflection layer that reflects EUV light formed above the substrate, and an absorption layer that absorbs the EUV light formed above the reflection layer. The reflective mask further includes a monitor pattern monitoring an attachment amount of contamination attached during exposure.

Reflective mask, method of monitoring the same, and method of manufacturing semiconductor device

According to one embodiment, generating virtual data by mirroring data based on a dimension measurement result in a measurement region on an inner side of a shot region to a non-shot region on an outer side of a shot edge, and calculating dose data of the measurement region and a non-measurement region based on data in the measurement region and the virtual data are included.

Dose-data generating apparatus

According to one embodiment, a method for making a correction map of a dose amount of EUV light used when exposing with the EUV light, includes estimating an exposure result based on an initial correction map of the dose amount and flare of the EUV light, determining a goodness of the exposure result, and correcting the initial correction map in the case where the exposure result is unacceptable. And, the correcting of the initial correction map, the estimating of the exposure result, and the determining of the goodness are repeated until the exposure result is good.

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Mie, Japan

Takashi Koike