Fujifilm Corporation

Takashi Koike

Satoshi Yoneyama

Kazuhide Hasegawa

Tetsuo Kawano

Ryo Matsuno

Ryouko Agui

Provided is a stack-type lens array capable of preventing a lens from peeling off due to stress during dicing or vibration and impact when used. The stack-type lens array is formed by stacking and bonding two lens sheets in which micro lenses are arranged on a flat portion at predetermined intervals. Antireflection films are vapor-deposited on a convex surface and a concave surface of the lens and a light shielding film is vapor-deposited such that a circular opening is formed at the center of the concave surface. The opening serves as a diaphragm aperture of the lens. An exposed surface in which neither the antireflection film nor the light shielding film is vapor-deposited is provided outside the light shielding film between adjacent lenses. A dicing line is set at the center of the exposed surface. An adhesive layer is formed in a predetermined pattern on the exposed surface.

Stack-type lens array and lens module

A lens module capable of preventing a deterioration of optical properties and a method for manufacturing thereof are provided. Optical axes of lens portions of superimposed lens arrays are aligned. Substrate portions of the other lens arrays of the superimposed lens arrays except the lowermost lens array are cut by a first cutting portion. Subsequently, thermosetting resins are supplied from a gap between cut surfaces of the cut substrate portion so as to fill a gap between the substrate portions of the superimposed lens arrays with the thermosetting resins and to cause the thermosetting resins to integrally cover the cut surfaces of the substrate portion and a surface of the substrate portion of the uppermost lens array. Thereafter, the thermosetting resins are cured, and an individual lens module is separated by cutting the substrate portion of the lowermost lens array using a second cutting portion.

Lens module and method for manufacturing thereof

In a process for producing a photoelectric conversion device comprising a bottom electrode layer, a photoelectric conversion semiconductor layer, a buffer layer, and a transparent conductive layer, which are stacked in this order on a substrate, all film forming stages ranging from a stage of forming the buffer layer to a stage of forming the transparent conductive layer are performed with a liquid phase technique. The buffer layer is formed with a chemical bath deposition technique, and the transparent conductive layer is formed with an electrolytic deposition technique.

Process for producing photoelectric conversion devices

A method of producing a photoelectric conversion device having a multilayer structure formed on a substrate, the multilayer structure including a lower electrode, a photoelectric conversion layer made of a compound semiconductor layer, an n-type buffer layer made of a compound semiconductor layer, and a transparent conductive layer, is disclosed. A reaction solution, which is an aqueous solution containing an n-type dopant element, at least one of ammonia and an ammonium salt, and thiourea, is prepared, the n-type dopant is diffused into the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer in the reaction solution controlled to a temperature in the range from 20&#xb0; C. to 45&#xb0; C.; and the buffer layer is deposited on the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer subjected to the diffusion step in the reaction solution controlled to a temperature in the range from 70&#xb0; C. to 95&#xb0; C.

Method of producing photoelectric conversion device having a multilayer structure formed on a substrate

A core/shell particle which includes a core component that contains a metal, and a shell component that coats the core component, the shell component including a a hydrolysate and/or a partial condensate of a compound represented by the formula '(R)&#x2014;A(X)', wherein R represents a substituted or unsubstituted alkyl group or the like, A represents Si or Ti, X represents a hydroxyl group or the like, and m represents an integer of 1 to 3. Furthermore, a method of producing a core/shell particle is provided.

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Ashigarakami-gun, Japan

Takashi Koike