Canon Kabushiki Kaisha

Sony Corporation

Kabushiki Kaisha Toshiba

Hitachi, Ltd.

Jfe Steel Corporation

Fuji Photo Film Company, Limited

Nippon Telegraph and Telephone Corporation

Sony Semiconductor Solutions Corporation

Nkk Corporation

E.i. Dupont De Nemours and Company

Toshiba Memory Corporation

Nippon Oil Corporation

Matsushita Electric Industrial Co., Ltd.

Tokyo Shibaura Denki Kabushiki Kaisha

Ishikawajima-harima Jukogyo Kabushiki Kaisha

Takashi Kobayashi

Shinichi Hatae

Kazuhiro Noguchi

Mitsuo Niida

Shinji Ohnishi

Shigeru Ogino

Nobuyuki Nakamura

Kenichi Aoyagi

Daisuke Uchida

Shinichi Koyama

Hideaki Morishima

Hiroyuki Takimoto

Yoshimasa Funakawa

Jun Makino

Yoshihiro Nakatani

Taizou Hori

Hiroyuki Fukuoka

Eietsu Takahashi

Kazuhiko Mori

Katsuhiro Seo

Takahisa Ohsaki

Takashi Yamaguchi

Toshimasa Kobayashi

Haruchika Ishii

Naoki Maki

Satoru Kijima

Natsuki Toyota

Masaomi Nakahata

Seiichi Hikata

Shinichi Takemura

Masaki Kondo

Hiroshi Yoshida

Yoichi Minemura

Tomonori Hino

Masashi Kitamura

Tsuyoshi Tojo

Yoshiki Okamoto

Satoshi Tomioka

Daisuke Hagishima

Kiyoshi Yamaguchi

Masafumi Ozawa

Tadashi Taniguchi

Minoru Kosuge

Takashi Doi

Kenzo Kurihara

Tetsuya Mega

Shinichi Ansai

Fumitaka Arai

Akira Ishibashi

Kenji Yamamoto

Hiroshi Araki

Nobuhiko Shinoda

Yasuhiro Oda

Sadahiko Tsuji

Hiroyuki Hamano

Hisashi Yoshida

Wataru Sakamoto

Noriaki Nishi

Takashi Kurihara

Nobuhiko Ogura

Tatsuya Kato

Ikuo Uematsu

Satoshi Taniguchi

Masamichi Ito

Tadayuki Imai

Norikazu Nakayama

Kazuo Fujiura

Tsunenori Asatsuma

Motoi Kimura

Masami Sato

Masayuki Shibata

Takeharu Asano

Yoshihiro Uchiyama

Kazushi Nakano

Tadasi Sonobe

Masahiro Sasaura

Yuka Miyamoto

Seishi Ikami

Nobuhiko Shigyo

Michio Miyazaki

Masashi Hakamata

Norihisa Komoda

Shinichi Sotome

Hirohisa Yasukawa

Hideshi Fukumoto

Isao Tsushima

Shigeru Takabe

Yohtaro Yasu

Yuhei Kobayashi

Hirokazu Mogi

Teruhiro Takizawa

Midori Kanaya

Hirofumi Nakano

Ken Komiya

Toshio Saitoh

Haruki Yokoyama

Tatsuo Kiuchi

Fumihiko Hanzawa

Shunji Kakiuchi

Kenichi Kageura

The present technique reduces the wiring inductance between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser has at least one light emitting point. The semiconductor laser is mounted on one surface of the substrate in such a manner that an electrode of the light emitting point and a pattern of the substrate are connected to each other via a bump. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A sealing portion seals a connection terminal portion of the semiconductor laser for the substrate.

Semiconductor laser driving apparatus, electronic equipment, and manufacturing method of semiconductor laser driving apparatus

The present invention is aimed at radiating a linear light beam without distortion regardless of an incident angle of the scanning light beam in an optical module that irradiates a target object with a light beam and detects the reflected light. In an optical module of the present invention, an optical scanning unit () causes the light beam to scan in a predetermined direction (perpendicular direction). An optical conversion unit () converts the scanning light beam into a linear light beam in a linear direction (horizontal direction) substantially orthogonal to the scanning direction. A light detection unit () detects reflected light, which is the linear light beam reflected from a target object. The optical conversion unit () has an optical surface (S) having a radius of curvature (rx) in the scanning direction that is substantially equal to a distance from a virtual scanning center point (Ox) in the scanning direction to a center point (A) of the optical surface (S), regardless of a position in the linear direction. The optical module of the present invention is applicable to a distance measuring device.

Optical module and distance measuring device

A signal generation apparatus is used in a ToF camera system especially adopting the indirect system and suppresses occurrence of a cyclic error. The signal generation apparatus includes a first pulse generator configured to generate a pulse to be supplied to a light source that irradiates light upon a distance measurement target, a second pulse generator configured to generate a pulse to be supplied to a pixel that receives the light reflected by the distance measurement target, and a signal selection section configured to select and output a duty cycle of a signal to be outputted from the first pulse generator from between a first duty cycle and a second duty cycle different from the first duty cycle.

Signal generation apparatus for time-of-flight camera with suppressed cyclic error

This disclosure relates to a low-resistance a multi-layer electrode and method of making a multi-layer electrode. Silicon is deposited on a substrate to form a top silicon layer. Nickel is deposited onto the top silicon layer to form a nickel layer. The substrate is annealed for a first time period and at a first temperature to form a di-nickel silicide layer with a remainder silicon layer between the di-nickel silicide layer and the substrate. Unreacted nickel of the nickel layer is removed to expose the di-nickel silicide layer. The substrate is annealed for a second time period and at a second temperature to form a nickel monosilicide layer from the di-nickel silicide layer and the remainder silicon layer such that the nickel monosilicide layer forms between a remainder di-nickel silicide layer and the substrate. The remainder di-nickel silicide layer and nickel monosilicide layer form a multi-layer electrode.

Low resistance multi-layer electrode for phase change memory and methods of making the same

Disclosed herein is a lens module for a projector of laser scanning type which is focus-free and has a short throw distance. In one example, a lens module includes a first optical member including a free-curved lens that passes a beam light reflected by a minute vibrating mirror; and a second optical member including a free-curved mirror to reflect the beam light which has passed through the first optical member, or a free-curved lens to pass the beam light which has passed through the first optical member. The beam light, which has been reflected by or has passed through the second optical member, has at the same position beam waists in horizontal and vertical directions perpendicular to a propagating direction of the beam light and also has beam radii coinciding in the horizontal and vertical directions.

Lens module and projector

According to one embodiment, a semiconductor memory device includes: a memory string including first and second select transistors and memory cell transistors; a bit line connected to the first select transistor; word lines which are connected to gates of the memory cell transistors, respectively; first and second select gate lines which are connected to gates of the first and second select transistors, respectively; a first contact plug connected to the first select gate line; a first wiring layer provided on the first contact plug; a second contact plug connected to the second select gate line; a second wiring layer provided on the second contact plug; and a row decoder connected to the first and second wiring layers. The row decoder applies different voltages to the first select gate line and the second select gate line.

Semiconductor memory device applying different voltages to respective select gate lines

A high-carbon hot rolled steel sheet with excellent hardenability and small in-plane anisotropy, and a method for manufacturing the steel sheet are provided. The steel sheet has a chemical composition including, by mass %, C: 0.20 to 0.48%, Si: not more than 0.1%, Mn: not more than 0.5%, P: not more than 0.03%, S: not more than 0.01%, sol. Al: not more than 0.10%, N: not more than 0.005% and B: 0.0005 to 0.0050%, the balance including Fe and inevitable impurities. The steel sheet includes a microstructure containing ferrite and cementite. The cementite has an average grain size of not more than 1.0 &#x3bc;m. The steel sheet has an in-plane anisotropy of r value, &#x394;r, of not more than 0.1 in absolute value.

High-carbon hot rolled steel sheet with excellent hardenability and small in-plane anistropy and method for manufacturing the same

A high carbon hot rolled steel sheet and a method for manufacturing the same are provided, wherein excellent cold workability and excellent hardenability are obtained stably. The high carbon hot rolled steel sheet has a composition containing C: 0.20% to 0.48%, Si: 0.1% or less, Mn: 0.5% or less, P: 0.03% or less, S: 0.01% or less, sol. Al: more than 0.10% and 1.0% or less, N: 0.005% or less, B: 0.0005% to 0.0050%, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, and a microstructure composed of ferrite and cementite, wherein the average grain size of the above-described ferrite is 10 to 20 &#x3bc;m and the spheroidization ratio of the above-described cementite is 90% or more.

High carbon hot rolled steel sheet and method for manufacturing the same

A steel sheet for soft-nitriding has a composition containing: C: 0.05% or more to 0.10% or less; Si: 0.5% or less; Mn: 0.7% or more to 1.5% or less; P: 0.05% or less; S: 0.01% or less; Al: 0.01% or more to 0.06% or less; Cr: 0.5% or more to 1.5% or less; V: 0.03% or more to 0.30% or less; and N: 0.005% or less, on a mass percent basis, wherein a ratio of amount of solute V to the V content (amount of solute V/V content) is more than 0.50, and balance comprises Fe and incidental impurities, and a complex-phase microstructure containing ferrite and pearlite.

Steel sheet for soft-nitriding and method for manufacturing the same

A steel sheet for soft-nitriding has a composition containing: C: 0.05% or more to 0.10% or less; Si: 0.5% or less; Mn: 0.7% or more to 1.5% or less; P: 0.05% or less; S: 0.01% or less; Al: 0.01% or more to 0.06% or less; Cr: 0.5% or more to 1.5% or less; Nb: 0.005% or more to 0.025% or less; and N: 0.005% or less, on a mass percent basis, such that C and Nb satisfy 0.10&#x2264;Nb/C&#x2264;0.30 (where C and Nb are respective contents of the elements (by mass %)), wherein balance comprises Fe and incidental impurities, and a microstructure that is a complex-phase microstructure containing ferrite and pearlite, and the microstructure having a ratio of a microstructure other than the ferrite and the pearlite of 1% or less, and the microstructure having a ratio of polygonal ferrite in the ferrite of less than 50%.

According to one embodiment, a method for producing an electrode, includes applying tensile force. The electrode includes a strip current collector, a current collector exposed portion, and an active material-containing layer. In the applying tensile force, arranging a strip electrode plate on a roller including a step portion and a recessed portion such that the current collector exposed portion is positioned on the step portion and the active material-containing layer is positioned on the recessed portion, and then applying tensile force to the strip electrode plate in a longitudinal direction of the strip electrode plate.

Method for producing electrode and method for producing battery

According to one embodiment, there is provided a nonaqueous electrolyte secondary battery. A negative electrode current collector comprises a coated portion on which the negative electrode active material layer is provided and a noncoated portion which is adjacent to the coated portion, in which the negative electrode active material layer is not present. A density of the negative electrode active material layer is within a range of 2.1 g/cc to 2.4 g/cc. A ratio W/Wof a mass of the coated portion per unit area (W) to a mass of the noncoated portion per unit area (W) is from 0.997 to 1.

Nonaqueous electrolyte secondary battery

A high carbon steel sheet having a chemical composition containing C: 0.20% to 0.50%, Si: 1.0% or less, Mn: 2.0% or less, P: 0.03% or less, S: 0.02% or less, sol. Al: 0.08% or less, N: 0.02% or less, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, and a microstructure composed of ferrite and cementite, wherein the fraction of pro-eutectoid ferrite, among the ferrite, in the whole steel microstructure is 20% or more and less than 50%, the average grain size dc of the cementite in the region from the position at one-quarter of the sheet thickness of the steel sheet to the sheet thickness center is 0.50 to 1.5 &#x3bc;m, and the average grain size ds of the cementite in the region from the surface of the steel sheet to the position at one-quarter of the sheet thickness satisfies ds/dc&#x2266;0.8.

High carbon thin steel sheet and method for producing same

An image processing apparatus capable of obtaining a gamma characteristic (non-linear conversion characteristic) giving consideration to a difference between light and dark parts in a subject region is provided along with a method for controlling the same. A value indicating the difference between light and dark parts in the subject region is calculated based on image data. Then, by interpolating multiple basic gamma characteristics using the value indicating the difference between light and dark parts, a gamma characteristic depending on the difference between light and dark parts is generated and applied to the image data.

Image processing apparatus and method for controlling the same for obtaining and applying gamma characteristics to reduce a difference between light and dark areas of an image

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Kanagawa, Japan

Takashi Kobayashi