Hitachi, Ltd.

Renesas Technology Corp.

Sii Crystal Technology Inc.

Other

Seiko Instruments Inc

Hitachi Device Engineering Co., Ltd.

Hitachi Medical Corporation

Jfe Steel Corporation

Renesas Electronics Corporation

Hitachi Ulsi Systems Co., Ltd.

Hitachi Car Engineering Co., Ltd.

Sankin Kogyo Kabushiki Kaisha

E.i. Dupont De Nemours and Company

Hitachi Industrial Equipment Systems Co., Ltd.

Nippon Oil Corporation

Takashi Kobayashi

Yoshitaka Sasago

Toshiyuki Mine

Hideaki Kurata

Naoki Kobayashi

Katsutaka Kimura

Hitoshi Kume

Fumio Tajima

Yutaka Matsunobu

Masataka Kato

Tomoyuki Ishii

Kazuo Yano

Nozomu Matsuzaki

Tetsuo Adachi

Noriaki Hino

Takeo Shiba

Osamu Koizumi

Shuntaro Machida

Suetaro Shibukawa

Takahide Ikeda

Satoru Hanzawa

Shouichi Kawamata

Koichi Seki

Takayuki Kawahara

Tokuo Kure

Norikatsu Takaura

Hiroyuki Minemura

Keiichi Yoshida

Keiichi Mashino

Kazuyoshi Sugama

Norio Suzuki

Takashi Hashimoto

Tatsuya Kobayashi

Hitoshi Kubota

Yasushi Goto

Ryoso Masaki

Kenji Takahashi

Atsushi Ninomiya

Kenichi Saito

Ken Yoshioka

Shinichi Takemura

Yasuo Morooka

Toshiyuki Innami

Toshimichi Shintani

Kenji Ogiro

Kenichi Aoyagi

Tatsuya Nagata

Kohji Maki

Nobuyoshi Kobayashi

Daisuke Uchida

Toshifumi Suzuki

Masaharu Kinoshita

Shunichi Saeki

Akio Shima

Yoichi Tamaki

Hiromi Shimamoto

Toshiyuki Kikuchi

Kazuhiro Ohnishi

Toshiaki Nishimoto

Taro Osabe

Shigeru Kakugawa

Jiro Yugami

Masashi Kitamura

Mitsuharu Tai

Takashi Yasuhara

Tsuyoshi Arigane

Yukinori Taneda

Chikara Kami

Hiroshi Kanazawa

Fumikazu Itoh

Yoshinori Takase

Yuka Miyamoto

Atsushi Nozoe

Shoji Kubono

Kenzo Kurotsuchi

Atsushi Hiraiwa

Keiji Oda

Michitaro Kanamitsu

Kaneharu Okuda

Shinji Shirakawa

Takahiro Morikawa

Naoya Kanda

Shinpei Iijima

Koji Suzuki

Shinichi Fujino

Isamu Takekoshi

Masayuki Shibata

Satoshi Tamano

Takanori Aono

Kikuo Kusukawa

Seii Miyakawa

Kunio Hashiba

Yoshihiro Ikeda

Houng Joong Kim

Tadasi Sonobe

Mitsuo Sato

ShinIchiro Kimura

Hiroshi Nakata

Hayato Saito

Naoki Maki

There is provided a piezoelectric vibrator element which is excellent in vibration characteristics, high in quality, and capable of suppressing a frequency fluctuation after a frequency adjustment. The piezoelectric vibrator element is provided with a piezoelectric plate having a pair of vibrating arm parts, an electrode film disposed on obverse and reverse surfaces of the piezoelectric plate, and weight metal films for a frequency adjustment disposed on the electrode film at the obverse surface side in the vibrating arm parts. The reverse surface of the vibrating arm part has a reverse side exposure part from which the piezoelectric plate is exposed. The obverse surface of the vibrating arm part has an obverse side exposure part from which the weight metal film and the electrode film are removed, and from which the piezoelectric plate is exposed. A whole of the obverse side exposure part overlaps the reverse side exposure part at a distance from the electrode film on the reverse surface viewed from a thickness direction of the piezoelectric plate.

Piezoelectric vibrator element, piezoelectric vibrator, oscillator, and method of manufacturing piezoelectric vibrator element

A high-carbon hot-rolled steel sheet having a chemical composition containing, by mass %, C: more than 0.40% and 0.63% or less, Si: 0.10% or less, Mn: 0.50% or less, P: 0.03% or less, S: 0.010% or less, sol.Al: 0.10% or less, N: 0.0050% or less, B: 0.0005% or more and 0.0050% or less, and at least one of Sb, Sn, Bi, Ge, Te, and Se in an amount of 0.002% or more and 0.030% or less in total. The steel sheet has a microstructure including ferrite and cementite, in which the density of cementite in ferrite grains is 0.13 pieces/&#x3bc;mor less. Additionally, the steel sheet has a hardness of 81 or less in terms of HRB and a total elongation of 33% or more.

High-carbon hot-rolled steel sheet and method for manufacturing the same

There is provided a high-carbon hot-rolled steel sheet and method for producing the same. The steel sheet has excellent hardenability consistently, even when annealed in a nitrogen atmosphere, and excellent workability. The steel sheet has a hardness in the range of 65 or less in terms of HRB and a total elongation El of 40% or more before a quenching treatment is performed.

There is provided is a high-carbon hot-rolled steel sheet and method for producing the same. The steel sheet has excellent hardenability consistently, even when annealed in a nitrogen atmosphere, and excellent formability. The steel sheet has a hardness in the range of 83 HRB or less and a total elongation of 30% or more before being subjected to a quenching treatment.

High-carbon hot-rolled steel sheet and method for producing the same

A method of manufacturing a piezoelectric vibrator element, a piezoelectric vibrator element, and a piezoelectric vibrator, superior in vibration characteristics, high in quality, and capable of suppressing a variation in frequency after a frequency adjustment, are provided. The method includes a first frequency adjustment step of performing ion milling on a weight metal film for a frequency adjustment formed on a surface of a tip part in each of a pair of vibrating arm parts, and a second frequency adjustment step of performing ion milling on the weight metal film at a lower etch rate than in the first frequency adjustment step after the first frequency adjustment step.

Method of manufacturing piezoelectric vibrator element, piezoelectric vibrator element, and piezoelectric vibrator

Disclosed is an ultrasonic transducer that is provided with: a bottom electrode; an electric connection part which is connected to the bottom electrode from the bottom of the bottom electrode; a first insulating film which is formed so as to cover the bottom electrode; a cavity which is formed on the first insulating film so as to overlap the bottom electrode when seen from above; a second insulating film which is formed so as to cover the cavity; and a top electrode which is formed on the second insulating film so as to overlap the cavity when seen from above. The electric connection part to the bottom electrode is positioned so as to not overlap the cavity when seen from above.

Ultrasonic transducer, method of producing same, and ultrasonic probe using same

A piezoelectric vibrator element is more stably bonded to reduce the displacement with respect to an external force. The piezoelectric vibrator element is provided with a pair of vibrating arm parts extending from a base, and support arm parts extending from the base on both outer sides of the vibrating arm parts in parallel thereto. Further, the piezoelectric vibrator element is bonded on a mounting part in the package with the pair of support arm parts to thereby be fixedly held. Two or more bonding regions of each of the support arm parts are disposed in the longitudinal direction. In the longitudinal direction, the bonding region on the base side is disposed on the base side of the centroid of the piezoelectric vibrator element. Thus, the length from the bonding point to the tip of the vibrating arm part can be shortened, and the displacement at the tip of the vibrating arm part can be reduced with respect to an impact from the outside. On the other hand, in order to suppress the vibration leakage from the vibrating arm part, the bonding region located on the base side is disposed on the centroid side of a connection part between the base and the support arm part.

Piezoelectric vibrator

A pair of vibrating arm portions are disposed lined up in a second direction perpendicular to a first direction and are configured such that base end sides thereof in the first direction are fixed to a base portion. A pair of inclined surfaces are formed on both sides in the second direction on the base end side of the vibrating arm portion so that a width of the vibrating arm portion in the second direction is gradually widened from the distal end side to the base end side. A length of a region, having the pair of inclined surfaces formed therein, in the first direction is set to equal to or greater than 0.25 times and equal to or less than 0.5 times of a total length of the vibrating arm portion from the base end to the distal end.

Piezoelectric vibrating piece and piezoelectric vibrator

A piezoelectric vibration piece includes: a base portion; a pair of vibration arm portions which extends in a first (+Y) direction from the base portion, and is arranged separately in a second (X) direction intersecting with the first (+Y) direction; and a support arm portion which extends in the first (+Y) direction from the base portion. The support arm portion, includes a first arm portion formed such that a width which is a length along the second (X) direction is gradually narrowed towards a tip end portion side of the support arm portion, and a second arm portion which extends in the first (+Y) direction from the first arm portion and is formed such that the width is broadened towards the tip end portion side.

Piezoelectric vibration piece and piezoelectric vibrator

A piezoelectric vibrator has a piezoelectric vibrating reed mounted on an upper layer base substrate through a conductive adhesive, in which the piezoelectric vibrating reed includes a first vibrating arm and a second vibrating arm extending along a first direction and arranged side by side in a second direction, a base supporting the first vibrating arm and the second vibrating arm and a first support arm and a second support arm positioned in the outer side of the first vibrating arm and the second vibrating arm in the second direction and bonded to the upper layer base substrate, in which an extrusion amount of the conductive adhesive in the inner side of the first support arm and the second support arm is smaller than an extrusion amount of the conductive adhesive in the outer side of the first support arm and the second support arm.

Piezoelectric vibrator and method of manufacturing piezoelectric vibrator

When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film.

Nonvolatile memory device and method for manufacturing same

Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line () which is provided above the substrate; a first laminated body, which is disposed above the first word line (), and which has the N+1 (N&#x2267;1) number of first inter-gate insulating layers (-) and the N number of first semiconductor layers (-) alternately laminated in the height direction of the substrate; a first bit line (), which extends in the direction that intersects the first word line (), and which is disposed above the laminated body; a first gate insulating layer () which is provided on the side surface of the N+1 number of the first inter-gate insulating layers (-) and those of the N number of the first semiconductor layers (-); a first channel layer () which is provided on the side surface of the first gate insulating layer (); and a first variable resistance material layer () which is provided on the side surface of the first channel layer. The first variable material layer () is in a region where the first word line () and the first bit line () intersect each other. Furthermore, a polysilicon diode (PD) is used as a selection element.

Semiconductor storage device and method for manufacturing same

To increase the strength of mounting at the time of mounting a piezoelectric vibrating piece on a package. In a piezoelectric vibrating piece having a pair of support arm portions which are provided with mount electrodes outside a pair of vibrating arm portions, concave portions to which a conductive adhesive used for mounting to the package can penetrate are formed in side end surfaces on the inner sides in a width direction of the respective support arm portions near the mount electrodes.

A piezoelectric vibrating strip includes a pair of vibrating arm portions in parallel with a central axis therebetween, and a base portion integrally cantilevering base end portions of the pair of vibrating arm portions in a length direction. Each of the pair of vibrating arm portions has a first groove portion and a second groove portion in a main face, the first groove portion being placed closer to a leading end portion in the length direction of the vibrating arm portions and having a groove width along a width direction orthogonal to the length direction and a thickness direction of the vibrating arm portion. The second groove portion is closer to the base end portion than the first groove portion and has a groove width along the width direction. The groove width ratio of the second groove portion to the first groove portion is between 0.4 and 1.0.

Piezoelectric vibrating strip, piezoelectric vibrator, oscillator, electronic device, and radio timepiece

A vertical chain memory includes two-layer select transistors having first select transistors which are vertical transistors arranged in a matrix, and second select transistors which are vertical transistors formed on the respective first select transistors, and a plurality of memory cells connected in series on the two-layer select transistors. With this configuration, the adjacent select transistors are prevented from being selected by respective shared gates, the plurality of two-layer select transistors can be selected, independently, and a storage capacity of a non-volatile storage device is prevented from being reduced.

Non-volatile memory device and production method thereof

Growing community of inventors

Tokorozawa, Japan

Takashi Kobayashi