Fujitsu Corporation

Adv Antest Corporation

Zeon Corporation

Takashi Kiuchi

Hiroshi Yasuda

Akio Yamada

Kiichi Sakamoto

Yoshihisa Oae

Kenichi Miyazawa

Tomohiko Abe

Junichi Kai

Takamasa Satoh

Soichiro Arai

Hidefumi Yabara

Masami Takigawa

Isamu Seto

Hisayasu Nishino

Shunsuke Fueki

Shigeru Maruyama

Kiyoshige Kojima

Hironobu Kitajima

Mitsuhiro Nakano

Horonobu Kitajima

There is provided a curable resin composition comprising a cycloolefin polymer and a cyclic peroxide which has a cyclic structure and a peroxy structure in the cyclic structure. There is also provided a laminate obtained by using a molded article which is obtained by forming the curable resin composition into a sheet shape or a prepreg which is obtained by impregnating the curable resin composition into a reinforcing fiber.

Curable resin composition, and molded article, prepreg and laminate using the same

A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

Multi-column electron beam exposure apparatus and multi-column electron beam exposure method

A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.

Method of providing changed particle beam exposure in which

To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

Method of and system for charged particle beam exposure

To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

A system for aligning a mask and a semiconductor wafer comprises radiation source for producing a radiation beam, a dual focus linear Fresnel zone plate provided on the mask for focusing the radiation beam incident thereto on a surface of the semiconductor wafer which comprises a first part having a first focal length and a second part having a second focal length substantially smaller than the first focal length, a diffraction grating provided on the surface of the semiconductor wafer in correspondence to the dual focus linear Fresnel zone plate for diffracting the radiation beam focused thereon, a detector held with a predetermined relationship with respect to the radiation source and the mask for detecting the diffracted beam, a movable stage for supporting the semiconductor wafer, and a controller for moving the stage means responsive to an output signal of the detection means.

Alignment of mask and semiconductor wafer using linear Fresnel zone plate

Alignment of mask and semiconductor wafer using linear fresnel zone plate

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Kawasaki, Japan

Takashi Kiuchi