Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Ckd Corporation

Takashi Kitazawa

Akihiro Yoshimura

Yoshitaka Sato

Kazuyuki Tezuka

Atsuo Sanda

Shinji Niwa

Toshihiko Kitoku

Toshiki Hosaka

Norihiko Amikura

Jun Hirose

Hiroshi Tsujimoto

Hiroshi Koizumi

Tetsuji Sato

Hiroki Endo

Kazuyuki Miura

Hideki Nagaoka

Nobutaka Sasaki

Minoru Ito

Masato Horiguchi

Hiroshi Nagahata

Keiki Ito

Tsuyoshi Shimazu

Hiroki Doi

Koji Yamagishi

Ryota Sakane

Jun Oyabu

Atsushi Kobayashi

Hideyuki Kobayashi

Yasushi Masuda

Tetsujiro Kono

Osamu Katsumata

A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.

Processing method and processing apparatus

A supporting member is configured to support at least one pipe connecting a temperature adjusting unit with a substrate processing apparatus, wherein the temperature adjusting unit adjusts a temperature of an arbitrary component of the substrate processing apparatus, wherein an inside of the supporting member includes a hollow portion and the at least one pipe is arranged in the hollow portion.

Supporting member and substrate processing apparatus

A substrate processing apparatus includes a chamber including a process chamber for performing a process on a substrate by a gas introduced thereto and an exhaust chamber for evacuating the gas in the process chamber, a shield member for separating the process chamber from the exhaust chamber provided in at least a part of a neighborhood of a side wall of the chamber, and a hollow relay member penetrating through the shield member for communicating the chamber with a pipe connected to a pressure gauge outside the chamber. The relay member is configured to receive a first gas flowing from the chamber into the relay member. The first gas has a first conductance. The first conductance is greater than a second conductance of a second gas flowing from the exhaust chamber into a gap between the relay member and the side wall of the chamber.

Substrate processing apparatus

There is provided a plasma processing apparatus capable of easily exhausting a processing gas introduced in a space above a vertically movable upper electrode. The plasma processing apparatus includes a vertically movable upper electrodeinstalled at a ceiling wallof a processing chamberso as to face a lower electrodeand having a multiple number of discharge holesfor introducing the processing gas; a shield sidewallconfigured to surround the electrodes and a processing space between the electrodes; an inner gas exhaust pathformed at the inside of the shield sidewall and configured to exhaust the atmosphere in the processing space; and an outer gas exhaust pathinstalled at the outside of the shield sidewall and configured to exhaust the processing gas introduced into a space between the upper electrode and the ceiling wall.

Plasma processing apparatus

A substrate mounting table of a substrate processing apparatus includes a base portion and a circular plate-shaped electrostatic chuck adhered to an upper surface of the base portion by an adhesive layer. The electrostatic chuck has a circular attracting surface to support a substrate. The substrate mounting table further includes an annular focus ring arranged around the electrostatic chuck to surround the substrate and to cover an outer peripheral portion of the upper surface of the base portion. The electrostatic chuck has a two-layer structure including an upper circular part and a lower circular part having a diameter larger than that of the upper circular part. An outer peripheral portion of the lower circular part and an outer peripheral portion of the adhesive layer adhering the lower circular part to the base portion are covered with the focus ring.

Substrate mounting table of substrate processing apparatus

Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A/C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less.

Method of setting thickness of dielectric and substrate processing apparatus having dielectric disposed in electrode

A leak rate measuring method measures a leak rate of a vacuum apparatus including a vacuum chamber in which an object is accommodated to be processed, a first gas exhaust pump connected to the vacuum chamber via a first valve serving as a conductance variable valve, and a second valve connected to a downstream side of the first gas exhaust pump in a gas flowing direction. In the leak rate measuring method, there is provided a circulating path branched from a gas exhaust path between the first gas exhaust pump and the second valve and connected to the vacuum pump to communicate therewith. The pressure inside the vacuum chamber is monitored by circulating a gas into the vacuum chamber through the circulating path with first gas exhaust pump under the condition that the first valve is set at a predetermined conductance and the second valve is closed.

Vacuum apparatus

Provided is a relative pressure control system has a simple configuration, but enables accurate regulation of a division ratio of an operation gas, and concurrently makes it possible to securely drain the operation gas from an operation gas pipeline in case of emergency. The system includes a plurality of air operated valves of a normally open type that are connected to an operation gas pipeline supplied with an operation gas; pressure sensors that are series connected to the respective air operated valves and that detect output pressures of the respective air operated valves; a controller that controls operation pressures of the respective air operated valves in accordance with the pressures detected by the pressure sensors; and a hard interlock solenoid valve that correlates the plurality of air operated valves to one another so that at least one of the plurality of air operated valves is normally opened. In the configuration, an opening of a specified one of the plurality of air operated valves is regulated, the operation gas is output at a predetermined division ratio.

Relative pressure control system and relative flow control system

An etching processing apparatushas a transfer chamber, a plurality of processing chambersand, and a plurality of cassette chambersand. Inside the transfer chamber, a transfer mechanismis provided. A control devicepauses the operation of the vacuum pumpafter closing an opening/closing valveof a vacuum evacuating mechanism, which vacuum evacuates the transfer chamberin which the transfer mechanismis provided, when the operation of the transfer mechanismis paused for a predetermined time or longer. Accordingly, conservation of energy becomes possible without causing decrease of productivity.

Vacuum processing apparatus and substrate transfer method

There is provided a vacuum processing apparatus and an exhausting apparatus of the vacuum processing apparatus according to which the auxiliary vacuum pump can be made smaller or eliminated, and hence energy-saving and space-saving can be achieved, and moreover the floor space occupied by the exhausting apparatus can be reduced, and hence the vacuum processing apparatus as a whole can be made smaller in size. A main vacuum pump has an intake port connected to a processing chamber in which an article to be processed is processed in a vacuum atmosphere, to exhaust the processing chamber to a vacuum state. An auxiliary vacuum pump is connected to a discharge port of the main vacuum pump to exhaust the main vacuum pump to a vacuum state. The main vacuum pump is a high back pressure type pump that exhausts the processing chamber to a vacuum state with a predetermined high back pressure value.

Vacuum processing apparatus and control method thereof

Exhaust ring for manufacturing semiconductors

Growing community of inventors

Nirasaki, Japan

Takashi Kitazawa