Renesas Electronics Corporation

Fuji Xerox Co., Ltd.

Bridgestone Corporation

Renesas Technology Corp.

Astellas Pharma Gmbh

Fujifilm Business Innovation Corp.

Takashi Kikuchi

Shigetoshi Nakamura

Roshan Thapliya

Koichi Kanemoto

Michiaki Sugiyama

Chuichi Miyazaki

Tatsuya Hirai

Tomoaki Hashimoto

Toshihiro Shiotsuki

Takeshi Noguchi

Kazuya Takano

Chikako Imura

Hiroshi Ikeda

Jiro Minabe

Taro Yokose

Takahiro Ishizuka

Akira Sakamoto

Yasuhiro Ogasawara

Kazuhiro Hayashi

Shuichi Nakagawa

Shuuichi Kariyazaki

Motohiko Sakamaki

Junichi Matsunoshita

Masatoshi Yasunaga

Takafumi Nishita

Tsuyoshi Kitamura

Takafumi Kikuchi

Ryosuke Kimoto

Takashi Miwa

Yasunari Kishimoto

Masanori Shibamoto

Yuki Hara

Takeshi Kawakami

Masahiro Igusa

Kazuhiko Hirokawa

Suguru Nakaso

Toshikazu Ishikawa

Shinya Yoshida

Keita Tsuchiya

Masakazu Fukunaga

Hiroshi Koyama

Jun Matsuhashi

Koichiro Mukoyoshi

Hiroshi Kawakubo

Yusuke Tanuma

Takahiro Akiba

Kiichi Sato

Shigenobu Suzuki

Kazuko Hanawa

Nobuo Murota

Hironori Hamazaki

Toshitaka Yoshino

Katsuhiko Gato

Hironobu Yasuda

Kazuya Maruyama

Junichi Kase

Hiroshi Kawakukbo

Masaru Kawakami

A document processing apparatus includes a processor configured to receive purpose information indicating a purpose of creating a document, extract item definition information corresponding to the purpose indicated by the received purpose information from item definition information stored in a memory for the item definition information in which one or more items to be posted in the document are defined in correspondence with the purpose of creating the document, extract an item value corresponding to each item defined in the extracted item definition information from item information stored in a memory for the item information including the item value of each item, and assign the extracted item value in each predetermined area of the document to create the document.

Document processing apparatus, document processing system, and non-transitory computer readable medium storing program

The semiconductor device includes a wiring substrate, a first and second semiconductor chips, and the heat sink. The wiring substrate has a first surface. The first and second semiconductor chips are disposed on the first surface. The heat sink is disposed on the first surface so as to cover the first semiconductor chip. The heat sink has a second surface and the third surface opposite the first surface. The second surface faces the first surface. The heat sink has a first cut-out portion. The first cut-out portion is formed at a position overlapping with the second semiconductor chip in plan view, and penetrates the heat sink in a direction from the third surface toward the second surface. The second surface is joined to at least four corners of the first surface.

Semiconductor device

A holographic-stereogram-forming apparatus includes a laser beam source that generates a laser beam to be split into an object beam and a reference beam; a display that displays an original image corresponding to a substantially strip-shaped holographic element constituting a holographic stereogram containing parallax information in a horizontal direction; a diffusing unit provided on a light-emission side of the display and including optical elements having different thicknesses in a direction of light transmission, the optical elements being arranged in a matrix and each having a substantially rectangular shape with a vertical length being shorter than a horizontal length, the diffusing unit diffusing object beam more widely in the vertical direction than in the horizontal direction, the object beam to be diffused by the diffusing unit being generated by the display; and a condensing unit that condenses the object beam diffused by the diffusing unit on a hologram recording medium.

Holographic-stereogram-forming apparatus, diffusing member, and holographic-stereogram-forming method

An aqueous ink contains a colorant, an aqueous solvent, and as an infrared absorber, a compound represented by general formula (I): where R, R, and Rare each independently alkyl, and Ris a group represented by general formula (I-R): where Ris hydrogen or methyl, and e is an integer of 0 to 3.

Aqueous ink, ink cartridge, ink drying system, ink drying method, recording apparatus, and recording method

Provided are a method for producing a sulfonyl amidine compound, which has an excellent gonadotropin releasing hormone receptor antagonism and is useful as a therapeutic agent for gonadotropin-dependent diseases (for example, prostate cancer, breast cancer, endometriosis, uterine fibroid, prostatic hyperplasia, or the like) or a salt thereof, and a synthesis intermediate useful in the production method. The production method of the present invention controls formation of a by-product which is hardly removed unless column purification is conducted and racemization of a target compound, thereby obtaining the target compound with a high purity, and therefore, the production method is suitable for industrial production.

Method for producing sulfonyl amidine compound

A semiconductor device in which a plurality of semiconductor chips having different planar sizes are stacked with a degree of freedom in design of each of the semiconductor chips is provided. A logic chip, a redistribution chip, and a memory chip having a larger planar size than the logic chip are mounted over a wiring board. The logic chip and the memory chip are electrically connected via the redistribution chip. The redistribution chip includes a plurality of front surface electrodes formed to a front surface facing the wiring board, and a plurality of back surface electrodes formed to a back surface opposite to the surface. The redistribution chip has a plurality of through silicon vias, and a plurality of lead wirings formed to the front surface or the back surface and electrically connecting the plurality of through silicon vias and the front surface electrodes or the back surface electrodes.

Semiconductor device with chip having a different number of front surface electrodes and back surface electrodes

[Problem] A salt or crystal of a compound which is highly stable in a solid state and useful as a bulk material for the preparation of a pharmaceutical product is provided. [Means for Solution] 4-{[(1R,2s,3S,5s,7s)-5-Hydroxy-2-adamantyl]amino}-1H-pyrrolo[2,3-b]pyridine-5-carboxamide succinate, 4-{[(1R,2s,3S,5s,7s)-5-hydroxy-2-adamantyl]amino}-1H-pyrrolo[2,3-b]pyridine-5-carboxamide hydrobromide, and 4-{[(1R,2s,3S,5s,7s)-5-hydroxy-2-adamantyl]amino}-1H-pyrrolo[2,3-b]pyridine-5-carboxamide hydrochloride and crystals thereof are useful as a bulk material for the preparation of a solid preparation, in particular, a solid dispersion preparation. Furthermore, the crystal of the hydrobromide has excellent stability in a solid state and is useful as a bulk material for the preparation of a pharmaceutical product.

Crystal of fused pyridine compound salt

Bump electrodes (conductive members) bonded onto lands disposed at a peripheral portion side than terminals (bonding leads) electrically coupled to pads (electrode pads) of a microcomputer chip (semiconductor chip) are sealed with sealing resin (a sealing body). Thereafter, the sealing resin is ground (removed) partially such that a part of each of the bump electrodes is exposed. The step of protruding the part of each of the bump electrodes from a front surface of the sealing resin is performed, after the grinding step.

Method for manufacturing a package-on-package type semiconductor device

The reliability of the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via the insulating film which has adhesive property is improved. In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.

Method of manufacturing semiconductor device

A surface mount type semiconductor device is disclosed. The semiconductor device has testing lands on a lower surface of a wiring substrate with a semiconductor chip mounted thereon. Lower surface-side lands with solder balls coupled thereto respectively and testing lands with solder balls not coupled thereto are formed on a lower surface of a wiring substrate. To suppress the occurrence of contact imperfection between the testing lands and land contacting contact pins provided in a probe socket, the diameter of each testing land is set larger than the diameter of each lower surface-side land. Even when the wiring substrate is reduced in size, electrical characteristic tests using the testing lands can be done with high accuracy.

Semiconductor device and method of manufacturing the same

The reliability of a semiconductor device is improved. A sealing resin (sealed body) is formed between a sub-substrate (first base member) and a base substrate (second base member) that are provided individually and distinctly to be integrated therewith, and then, the sub-substrate is electrically coupled to the second base member. As a means for electrically coupling the sub-substrate to the base substrate, lands (first lands) formed on the sub-substrate and lands (second lands) formed on the base substrate are disposed such that the respective positions thereof are aligned. After through holes are formed from the lands of the sub-substrate toward the lands of the base substrate, a solder member (conductive member) is formed in each of the through holes.

Manufacturing method of semiconductor device

There is provided an optical device including: a passive core layer in which is formed an optical circuit having a refractive index n; an active core layer covering at least a portion of the optical circuit, exhibiting an electro-optical effect, and having a refractive index of nhigher than n; a lower clad layer over which the passive core layer is formed and having a refractive index nlower than n; an upper clad layer covering the active and passive core layers and having a refractive index nlower than n; a lower electrode disposed below the lower clad layer; and an upper electrode disposed on the upper clad layer, in which the entrance and exit portions of the active core layer are tapered, respectively.

Optical device and multiple beam scanner

There is provided a method of producing a waveguide element comprising steps of forming a lower cladding layer having a refractive index non a substrate having a lower electrode; forming an active core layer having a refractive index nand exhibiting an electro-optical effect on a surface of the lower cladding layer; forming a protective layer having a reflective index non a surface of the active core layer; forming a passive core layer having a reflective index non a surface of the protective layer; exposing the passive core layer with a predetermined pattern to form an optical circuit; forming an upper cladding layer on a surface of the passive core layer; forming an upper electrode on a surface of the upper cladding layer; and performing a polarization orientation treatment in which the active core layer is softened or liquidized and cured while the electric field is applied.

Waveguide element and method of production thereof

In the semiconductor device which has the structure which stores a plurality of semiconductor chips with which plane sizes differ in the same sealing body in the state where they are accumulated via DAF, thickness of DAF of the back surface of the uppermost semiconductor chip with which the control circuit was formed was made thicker than each of DAF of the back surface of the lower layer semiconductor chip with which the memory circuit was formed. Hereby, the defect that the bonding wire which connects the uppermost semiconductor chip and a wiring substrate contacts the main surface corner part of a lower layer semiconductor chip can be reduced.

Growing community of inventors

Kanagawa, Japan

Takashi Kikuchi