Kabushiki Kaisha Toshiba

Toshiba Tec Kabushiki Kaisha

Takashi Kawakubo

Kazuhide Abe

Michihiko Nishigaki

Toshihiko Nagano

Ryoichi Ohara

Kenya Sano

Kazuhiko Itaya

Takaaki Yasumoto

Naoko Yanase

Hiroshi Yoshida

Masahiko Hasunuma

Hiroshi Toyoda

Shuichi Komatsu

Ryutaro Kusunoki

Kazuhiro Eguchi

Noburu Fukushima

Osamu Takagi

Hiroshi Ono

Tomio Ono

Hiroshi Tsurumi

Ryuichi Arai

Mayumi Morizuka

Ryuichi Fujimoto

Hironobu Shibata

Tatsuo Shimizu

Hiroshi Tomita

Hisashi Kaneko

Akihiro Kajita

Yasushi Tomizawa

Sachiyo Ito

Tadahiro Sasaki

Takako Motai

Takashi Kawanoue

Masami Miyauchi

Daisaburo Takashima

Takashi Miyazaki

Naoharu Sugiyama

Tsutomu Tezuka

Katsutaro Ichihara

Yoshinori Iida

Keiichi Yamaguchi

Chiaki Tanuma

Hiroto Honda

Atsuko Iida

Ikuo Fujiwara

Nobuyuki Itoh

Hideo Hirayama

Mitsuaki Izuha

Junsei Tsutsumi

Michihiro Oose

Tooru Kozu

Takeshi Ookubo

Noboru Fukushima

According to one embodiment, an inkjet recording head includes a plurality of ink pressure chambers arranged in a first direction, a nozzle communicating with each of the ink pressure chambers, a plurality of individual ink supply paths which are arranged in a second direction and communicate with one end of each of the ink pressure chambers, a plurality of individual ink discharge paths which are arranged in the second direction and communicate with another end of each of the ink pressure chambers, a plurality of actuators configured to apply pressure to ink in the ink pressure chambers, a common ink supply path communicating with an end of each of the individual ink supply paths, and a common ink discharge path communicating with an end of each of the individual ink discharge paths.

Inkjet recording head

An ink jet head includes: a pressure chamber to be filled with ink formed in a pressure chamber structure, the pressure chamber in which an etching limiter made of a material different from a material of the pressure chamber structure is formed on an inner wall surface of the pressure chamber; a nozzle plate comprising a nozzle that leading to the pressure chamber and a movable range fitted to the etching limiter; and a flat driver comprising a piezoelectric body to operate the movable range and arranged on the nozzle plate.

Ink jet head having nozzle plate equipped with piezoelectric elements

According to one embodiment, an inkjet head includes a nozzle plate including a first surface, a second surface opposite to the first surface, a through hole configured to make the first surface communicate with the second surface, and a cylindrical member integrally extending from the second surface by extending the through hole. An ink pressure chamber communicating with the cylindrical member and the through hole is provided on the second surface side of the nozzle plate. This inkjet head also includes an actuator which discharges ink in the ink pressure chamber from the through hole by displacing the nozzle plate.

Inkjet head having high mechanical strength and method of manufacturing the same

An inkjet head includes: a pressure chamber in which ink is filled; a nozzle plate which is provided on a first surface of the pressure chamber and which includes a nozzle communicating with the pressure chamber; and a planar drive section which is formed on the nozzle plate so as to extend from above a partition wall of the pressure chamber to above the pressure chamber, excluding a hole area around the nozzle and which has a piezoelectric body.

Inkjet head including nozzle plate provided with piezoelectric element

An inkjet recording head of an embodiment includes: an elastic film provided to form a part of a pressure-generating chamber connected to a nozzle opening; and a piezoelectric film-laminated part, an end thereof being fixed to the elastic film, a central part thereof facing the elastic film having an air gap in-between, the piezoelectric film-laminated part including a lower electrode, a piezoelectric film, and an upper electrode.

According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

Acoustic semiconductor device

The present embodiments provide an acceleration sensor, which enables highly accurate detection and has an extremely compact size. The acceleration sensor of the present embodiments is provided with a substrate, a anchor portion formed on the substrate, a support beam, which has one end connected to the anchor portion and extends across a space from the substrate, and a proof mass which is connected to the other end of the support beam and held across a space from the substrate. The acceleration sensor is further provided with first and second piezoelectric bending resonators, a comparison unit, and a calculation unit. The first and second piezoelectric bending resonators have one end connected to the anchor portion and the other end connected to the proof mass or the support beam and have a stack of a first electrode, a first piezoelectric film, and a second electrode. The first and second piezoelectric bending resonators extend on the both sides of the support beam and perform bending resonance motion in a direction perpendicular to the piezoelectric film. The comparison unit measures a difference of a resonance frequency between the first and second piezoelectric bending resonators. The calculation unit calculates an acceleration in a direction perpendicular to the extending direction of the support beam in the substrate surface from the difference of the resonance frequency.

Acceleration sensor

A resonator according to the embodiment includes: a substrate; a flat layered body which is formed above the substrate and is formed with at least a lower electrode, a piezoelectric film and an upper electrode; an anchor portion which fixes the layered body above the substrate; a cut-out portion inside the layered body; a tuning fork vibrator which is formed in the cut-out portion, has both ends supported by the layered body and is formed with at least a lower electrode, a piezoelectric film and an upper electrode; and an envelope which envelopes the layered body and the tuning fork vibrator in a noncontact fashion, and prevents an external force from being applied to the layered body and the tuning fork vibrator.

Resonator and oscillator with a tuning fork vibrator in a cut-out portion of a layered body

A MEMS variable capacitor includes: a first connection beam having one end fixed to a substrate; a first actuation beam connected to the first connection beam; a second actuation beam connected to the first actuation beam and extending in a reverse direction; a second connection beam having one end fixed to the substrate; a third actuation beam connected to the second connection beam; a fourth actuation beam connected to the third actuation beam and extending in a reverse direction; a movable electrode provided between the second and fourth actuation beams; and a fixed electrode provided on the substrate opposed to the movable electrode. The first to fourth actuation beams have a piezoelectric film sandwiched between a lower electrode and an upper electrode, the first and third actuation beams are placed on a line, the second and fourth actuation beams are placed on a line, and the first and second actuation beams and the third and fourth actuation beams are placed symmetrically about a line.

MEMS variable capacitor having a piezoelectric actuation mechanism based on a piezoelectric thin film

In a angular rate sensor, a weight and a base are connected directly through piezoelectric bimorph detectors and piezoelectric bimorph exciters each having a bent portion. When acceleration is applied to the weight, the weight is displaced so as to deform the piezoelectric bimorph detectors. Due to this deformation, charges generated in the piezoelectric bimorph detectors are detected so as to detect acceleration. If an angular rate is applied to the weight when the weight is vibrated by the piezoelectric bimorph exciters, Coriolis force is generated in the weight so as to deform the piezoelectric bimorph detectors. Due to this deformation, charges generated in the piezoelectric bimorph detectors are detected so as to detect the angular rate.

Multiaxial acceleration sensor and angular velocity sensor

A multi-axis accelerometer or a multi-axis angular rate sensor which can be made by an easy process and the size of which can be greatly reduced is provided. An inertia sensor has a substrate, a flat proofmass formed on the substrate and a stacked structure including at least a lower electrode, a piezoelectric film, and an upper electrode, an anchor unit formed in a cutout inside of the proofmass and fixed on the substrate, and a plurality of flat piezoelectric beams each having one end connected to the proofmass, the other end connected to the anchor unit, and a stacked structure formed in a cutout inside of the proofmass and including at least a lower electrode, a piezoelectric film, and an upper electrode, wherein the inertia sensor enables to detect an acceleration applied on the proofmass based on charges generated to the electrodes of the piezoelectric beams.

Inertia sensor

A piezoelectric-driven MEMS element includes a substrate, a beam, a fixed portion, a fixed electrode portion and a power source. The beam is provided with a lower electrode film, a lower piezoelectric film, a middle electrode film, an upper piezoelectric film and an upper electrode film. The fixed portion fixes one end of the beam onto the substrate so as to hold the beam with a gap above the substrate. The fixed electrode portion has a capacitive gap between the fixed electrode portion and the other end of the beam. In addition, at least one or two of the lower electrode film, the middle electrode film and the upper electrode film is thicker than the rest thereof.

Piezoelectric-driven MEMS element

A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of the piezoelectric film and configured to drive the piezoelectric film, and a first electrode disposed at the center of the substrate-side of the piezoelectric film, and a second electrode disposed on a flat part of the recessed portion of the substrate and facing the first electrode of the movable flat beam.

Piezoelectric-driven MEMS device and method for manufacturing the same

An actuator includes: a substrate; a fixed electrode provided on a major surface of the substrate; a first dielectric film provided on the fixed electrode, and made of crystalline material; a movable beam opposed to the major surface, and held above the substrate with a gap thereto; a movable electrode; and a second dielectric film. The movable electrode is provided on a surface of the movable beam facing the fixed electrode, and has an alternate voltage applied between the fixed electrode and the movable electrode. The second dielectric film is provided on a surface of the movable beam facing the fixed electrode, and is made of crystalline material.

Actuator

A variable capacitance device has a piezoelectric driving part, a movable electrode, a fixed electrode, a dielectric film and a driving control unit. The piezoelectric driving part has a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on an undersurface of the piezoelectric film and electrode slits which separate the upper electrode and the lower electrode into two, respectively. The movable electrode is provided via the electrode slits at one end of the piezoelectric driving part. The fixed electrode is disposed opposite to the movable electrode via a gap. The dielectric film is disposed opposite to the movable electrode via the gap and provided on the fixed electrode. The driving control unit adjusts a distance between the movable electrode and the fixed electrode to reduce a fluctuation of a predetermined capacitance of a variable capacitor formed between the variable electrode and the fixed electrode.

Variable capacitance device and portable phone

Growing community of inventors

Yokohama, Japan

Takashi Kawakubo