Toyoda Gosei Co., Ltd.

Takashi Kawai

Shingo Totani

Misato Boyama

Koichi Goshonoo

Masao Kamiya

Yoshiki Saito

Koji Hirata

Takahiro Mori

Naoyuki Okita

To provide a light-emitting unit having a semiconductor light-emitting device with a good responsiveness and a sufficient light emission quantity. The light-emitting unit comprises a plurality of semiconductor light-emitting devices, an n-wiring electrode and a p-wiring electrode respectively connecting the semiconductor light-emitting devices in parallel, an n-pad electrode connected to the n-wiring electrode, and a p-pad electrode connected to the p-wiring electrode. At least one of the Group III nitride semiconductor light-emitting devices has a light emission volume of 1 &#x3bc;mto 14 &#x3bc;m.

Light-emitting unit

The present invention provides a light-emitting device suppressing the reduction in the light output while improving the response speed. As shown in FIG., the light-emitting device comprises four square element regions arranged with the sides of the element regions aligned in a two by two lattice. The light-emitting regions are disposed in the vicinity of corners at the center side of the element regions, and the light-emitting regions are localized in the vicinity of the center in the entire element region. A plane pattern of each of the light-emitting regions is formed so that plane patterns of p-electrodes and n-electrodes are not disposed in a region sandwiched by the light-emitting regions.

Light-emitting device

A group-III nitride compound semiconductor light emitting element includes a substrate that has a main face on which an concave and convex portion is formed, a group-III nitride compound semiconductor layer that is formed on the main face of the substrate, and a clearance that is formed between the substrate and the group-III nitride compound semiconductor layer at a first region of the semiconductor light emitting element. In the first region, a portion of the group-III nitride compound semiconductor layer and a portion of the clearance are disposed in a concave of the concave and convex portion on a section through two adjacent top portions of the concave and convex portion and a bottom portion located between the adjacent top portions.

Group-III nitride compound semiconductor light emitting element, manufacturing method therefor and semiconductor light emitting device

Growing community of inventors

Kiyosu, Japan

Takashi Kawai