Ngk Insulators, Inc.

Takashi Kataigi

Yuji Katsuda

Katsuhiro Inoue

Asumi Jindo

Hiroya Sugimoto

Takashi Tanimura

Shingo Amano

Tatsuya Kuno

Tetsuya Kawajiri

Kenichiro Aikawa

Yuji Akatsuka

Ikuhisa Morioka

Kazuma Ohba

Hideaki Takasaki

A member for semiconductor manufacturing apparatuses, which includes a ceramic electrostatic chuck and a cooling plate bonded together with a thermosetting sheet, is provided. The thermosetting sheet is made of a cured epoxy-acrylic adhesive. The adhesive contains (A) an epoxy resin capable of hydrogen transfer type polyaddition, (B) an acrylate or methacrylate polymer, and (C) a curing agent.

Member for semiconductor manufacturing apparatuses

An electrostatic chuck includes a first ceramic member disk-shaped and having an annular step surface outside a circular wafer holding surface thereof, the annular step surface being at a lower level than the wafer holding surface, the first ceramic member having a volume resistivity that allows Coulomb force to be exerted; a first electrode embedded in the first ceramic member at a position facing the wafer holding surface; a second electrode disposed on the annular step surface of the first ceramic member, the second electrode being independent of the first electrode; and a second ceramic member having an annular shape and configured to cover the annular step surface having the second electrode thereon, the second ceramic member having a volume resistivity that allows Johnsen-Rahbek force to be exerted, wherein an upper surface of the second ceramic member is a focus ring holding surface on which a focus ring is placed.

Electrostatic chuck and method for manufacturing the same

A member for semiconductor manufacturing device includes a susceptor which is a ceramic plate formed of AlN and a gas introduction pipe which is joined to the susceptor. An annular pipe joining bank is provided at a position of the susceptor facing a flange of the gas introduction pipe. In addition, a pipe brazed part is formed between the flange and the pipe joining bank. The flange has a width of 3 mm or more and a thickness of from 0.5 to 2 mm. It is preferable that the height of the pipe joining bank be 0.5 mm or more, the edge of the bank facing the outer edge of the flange. be chamfered as designated by C0.3 or more or rounded as designated by R0.3 or more.

Structure for joining ceramic plate to metal cylindrical member

A member for a semiconductor manufacturing apparatus includes an electrostatic chuck, a cooling unit, a spacer (an O-ring, an outer periphery spacer, or the like) for securing a gap placed between the electrostatic chuck and the cooling unit, and a clamp ring placed on the upper surface of the outer periphery of the electrostatic chuck. The clamp ring is fastened to the cooling unit with screws. The screws are inserted into coil springs that prevent loosening, and are fastened to nuts. The coil springs are attached not to the clamp ring side but to the cooling unit side.

Member for semiconductor manufacturing apparatus

A member for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al&#x2014;Si&#x2014;Mg or Al&#x2014;Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

Cooling plate, method for manufacturing the same, and member for semiconductor manufacturing apparatus

A member for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing SiC, TiSiC, and TiC. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al&#x2014;Si&#x2014;Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

In a semiconductor manufacturing apparatus member, paths that may become a discharge path between a wafer and a cooling device are a first path and a second path. The first path is the shortest path from a hole to a hole across a plug. The length of the first path is larger than the thickness of the plug. The second path is the shortest path that extends from one of holes to an outer peripheral surface of the plug along an adhesive layer, and the shortest path from a hole in a bonding sheet to the outer peripheral surface of the plug along the bonding sheet. The sum of the lengths of these respective paths is larger than the thickness of the plug.

Semiconductor manufacturing apparatus member

A ceramic heater for a semiconductor substrate process includes a plate and a shaft. The plate includes a first base and a second base bonded to the first base. Defined on a mounting surface of the first base are: a first region having a surface contacting with a mounted substrate; a purge groove provided in the portion covered with the substrate and surrounds the first region; and a second region having a surface surrounding the purge groove. The first base has: an adsorber configured to adsorb the mounted substrate onto the surface of the first region; and multiple purge holes each penetrating from the bottom surface of the purge groove to the lower surface of the first base. The purge groove is supplied with a purge gas through the multiple purge holes. The surface of the second region is located lower than that of the first region.

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Handa, Japan

Takashi Kataigi