Omron Corporation

Stmicroelectronics S.r.l.

Mmi Semiconductor Co., Ltd.

Takashi Kasai

Yuki Uchida

Sebastiano Conti

Filippo David

Igino Padovani

Shobu Sato

Koji Momotani

Toshiyuki Takahashi

Yoshitaka Tsurukame

Tadashi Inoue

Yasuhiro Horimoto

Masaki Munechika

Yusuke Nakagawa

Shuichi Wakabayashi

Fumihito Kato

Nobuyuki Iida

Luca Molinari

Shinya Nakagawa

Katsuyuki Yamamoto

Kazuyuki Ono

Yoshitaka Tatara

Martino Zerbini

Fumihiko Sato

Hideyuki Nakao

Hiroshi Imamoto

Akihiro Okugawa

Kenichi Handa

Hidetoshi Nishio

Masayuki Inuga

Inoue Tadashi

Hiroaki Sadohara

Kenta Kajikawa

Susumu Kamiyama

Hajime Kano

Tomofumi Nakamura

Kazutoshi Wakao

Takeshi Matsuo

Takayoshi Onishi

Mariko Terasaka

Akane Takahashi

Seung Kae Moon

Shinichi Terasaka

A flow sensor chip includes a substrate in which a cavity having an opening is formed; a membrane provided on a surface of the substrate so as to cover the opening; a heater provided inside the membrane; a first thermopile and a second thermopile provided in the membrane, the heater being interposed between the first thermopile and the second thermopile; and a heat conduction member serving as a heat conduction path between the substrate and the membrane. A first hot junction and a first cold junction of a thermocouple provided in the first thermopile and a second hot junction and a second cold junction of a thermocouple provided in the second thermopile are arranged at positions overlapping with the opening as viewed from a direction normal to the surface of the substrate.

Flow sensor chip

A package-type flow sensor includes a flow sensor chip having a sensor part configured to detect a flow of fluid, a package including a flat board part, forming an accommodating chamber configured to accommodate the flow sensor chip, and a connection terminal, provided on an outer surface of the board part, and connected to an external board. Further, in this package-type flow sensor, the board part is provided with a first vent hole communicating to inside and outside of the accommodating chamber, the package is provided with a second vent hole communicating to the inside and the outside of the accommodating chamber, at a position different from the board part, and the flow sensor chip is disposed on a flow passage of the fluid formed by the first vent hole and the second vent hole.

Package-type flow sensor

A thermal flow sensor chip has a heater part, and a pair of thermopiles provided so as to be opposite each other across the heater part. The heater part is famed by doping silicon with an impurity that reduces the electrical resistance. In each of the thermopiles: a silicon region is formed by doping silicon with an impurity that reduces the electrical resistance; the concentration of the impurity in a heater main part, including the lengthwise center of the heater part extending in the first direction, is lower than the concentration of the impurity in a heater outer peripheral part, the heater outer peripheral part being different from the heater main part and including a lengthwise end part of the heater part; and the concentration of the impurity in the heater main part is the same as the concentration of the impurity in at least part of the silicon region of the thermopile.

Thermal flow sensor chip

It is possible to reduce a decrease in accuracy of measuring the concentration of a measurement target gas even in a case where, in a mixture of gases, there is a gas greatly different from another gas in a rate of change in thermal conductivity with respect to temperature. The concentration measurement device includes a sensor configured to measure the concentration of a measurement target gas in a mixture of gases on the basis of thermal conductivity of the measurement target gas, the mixture of gases including two or more components, and a heating unit configured to heat the mixture of gases so that the concentration of the measurement target gas can be uniquely determined with respect to the thermal conductivity.

Concentration measurement device

A thermopile sensor includes a thermopile. The thermopile is formed by connecting thermocouples, in series on an insulating film, in which a first PolySi interconnect and a metal interconnect including a metal portion in at least a part thereof are connected, each of the thermocouples connected in series is arranged side by side with a predetermined gap, the metal interconnect is arranged to overlap the first PolySi interconnect in each of the thermocouples, at a connection portion between a thermocouple and an adjacent thermocouple, the metal interconnect crosses the gap between the first PolySi interconnects, and a first width of a portion of the gap where the metal interconnect crosses the gap between the first PolySi interconnects is greater than a second width of a remaining portion of the gap between the first PolySi interconnects.

Thermopile sensor

The thermal sensor chip includes a substrate in which a cavity having an opening is formed, a membrane provided on a surface of the substrate so as to cover the opening, and a heater provided on or inside the membrane, wherein the heater includes wires in a mesh form constituted by a conductive member.

Thermal sensor chip

A flow sensor chip includes a substrate in which a cavity having an opening is formed, a membrane provided on a surface of the substrate so as to cover the opening, a heater provided inside the membrane, a first thermopile and a second thermopile provided in the membrane, and a heat conduction member for heat conduction between the substrate and the membrane. A first hot junction and a first cold junction of a thermocouple provided in the first thermopile and a second hot junction and a second cold junction of a thermocouple provided in the second thermopile are arranged at positions overlapping with the opening in a plan view. The heat conduction member includes a first heat conduction member for heat conduction between the first cold junction and the substrate and a second heat conduction member for heat conduction between the second cold junction and the substrate.

Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane, provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane, provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Acoustic transducer and microphone using the acoustic transducer

A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being displaceable to have a displacement converted into a change in capacitance between the vibration electrode film and the back plate, an airflow channel defined by a gap between a protrusion integral with the back plate and a part of the vibration electrode film, the airflow channel being configured to increase an area of air flow when the vibration electrode film deforms under pressure to move relative to the protrusion integral with the back plate and relieve the pressure applied to the vibration electrode film to serve as a pressure relief channel, and an extension formed at a periphery of a hole in the vibration electrode film defining the pressure relief channel.

Capacitive transducer and acoustic sensor

A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being deformable to have a deformation converted into a change in capacitance between the vibration electrode film and the back plate, the vibration electrode film having a through-hole as a pressure relief hole, and a protrusion integral with and formed from the same member as the back plate, the protrusion being placeable in the pressure relief hole before the vibration electrode film deforms. The protrusion and the pressure relief hole have a gap therebetween defining an airflow channel as a pressure relief channel.

A capacitive transducer includes a substrate having an opening in a surface thereof, a back plate facing the opening in the substrate, a vibration electrode film facing the back plate across a space, the vibration electrode film being deformable to have a deformation converted into a change in capacitance between the vibration electrode film and the back plate, the vibration electrode film having a through-hole as a pressure relief hole, and a protrusion integral with and formed from the same member as the back plate, the protrusion being placeable in the pressure relief hole before the vibration electrode film deforms. The pressure relief hole and the protrusion have a gap therebetween defining an airflow channel as a pressure relief channel. The protrusion has a through-hole extending from a distal portion of the protrusion to a portion of the back plate opposite to the protrusion.

Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Acoustic transducer

An acoustic sensor adapted to convert acoustic vibration to a change in an electrostatic capacitance to detect the acoustic vibration is provided. The acoustic sensor includes a semiconductor substrate, a back plate including a fixed plate arranged to face a surface of the semiconductor substrate, and a fixed electrode film arranged on the fixed plate, and a vibrating electrode film arranged to face the back plate with a space formed therebetween. The vibrating electrode film includes a plate-like vibrating member that vibrates in response to sound pressure. The vibrating electrode film is fixed to the back plate with a fixing unit thereof including one or more fixing portions each including a fixing protruding end that is arranged on a protruding end of a leg portion protruding from an edge of the vibrating member. The vibrating member has an edge portion surrounding at least a part of the fixing protruding end.

Acoustic sensor

Growing community of inventors

Kusatsu, Japan

Takashi Kasai