Sony Corporation

Oki Semiconductor Co., Ltd.

Lapis Semiconductor Co., Ltd.

Takashi Izumi

Taku Nagase

Noboru Oki

A semiconductor device manufacturing method is disclosed. The method includes etching a silicon on insulator (SOI) from its surface (i.e., semiconductor substrate layer) to form a first trench and a second trench. The first trench extends through the SOI substrate and reaches an electrode pad. The second trench terminates in the semiconductor substrate layer. The manufacturing method also includes forming an insulation film that covers the surface of the semiconductor substrate layer as well as the side walls and bottoms of the first and second trenches. The manufacturing method also includes removing the insulation film from the bottoms of the first and second trenches to expose the electrode pad from the first trench bottom and to expose the semiconductor substrate layer from the second trench bottom.

Semiconductor device and manufacturing method thereof

A photodiode includes a silicon semiconductor layer; a P-type high concentration diffusion layer with a P-type impurity diffused therein at a high concentration; an N-type high concentration diffusion layer with an N-type impurity diffused therein at a high concentration; and a low concentration diffusion layer with one of the P-type impurity and the N-type impurity diffused therein at a low concentration. The P-type high concentration diffusion layer and the N-type high concentration diffusion layer are formed in the silicon semiconductor layer, and are arranged to face each other with the low concentration diffusion layer in between. The photodiode further includes an interlayer insulation film formed on the silicon semiconductor layer, so that a covalent bond between silicon and hydrogen is formed in an atom row of the low concentration layer adjacent to an interface thereof with respect to the interlayer insulation film. The silicon semiconductor layer where the low concentration layer is formed may have a thickness between 3 nm and 36 nm.

Photodiode, ultraviolet sensor having the photodiode, and method of producing the photodiode

Provides a normalizing apparatus that normalizes input signals to a turbo decoder without significantly increasing a size of a circuit. An input signal buffer () obtains a sum S for N pieces of input signal data I(i). An input data averaging part () obtains an average A by dividing the sum S by the number of data N. A divider () obtains normalized data I(i)/A by dividing the input signals I(i) by the average A. A weighting part () multiplies the normalized data I(i)/A with a weighting coefficient &#x3b1;, which is determined based on a ratio of a number of input data and a number of output data in rate matching. As a result, the normalization is made possible. Because a signal receiving quality does not need to be determined, an increase in circuit size is inhibited.

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Tokyo, Japan

Takashi Izumi