Matsushita Electric Industrial Co., Ltd.

Takashi Iwabuchi

Takeo Miyata

Takuhiro Ono

Masaru Ikedo

Masafumi Watari

Reiji Sano

Naoya Horiuchi

A laser beam generated between a total reflector and an output coupler is turned back by plural reflectors which are mounted in a discharge region along two main electrodes at 45.degree., and the discharge region is divided into plural divided discharge regions, thus, a diameter of an output laser beam is reduced to a diameter of the divided discharge regions.

Laser apparatus

A reflector for an excimer laser is composed of an aluminum layer deposited on a substrate and at least two pairs of dielectric multilayers of high refractive index material and low refractive index material alternately piled on the aluminum layer, and optical thickness of the respective layers of an outer pair of the dielectric multilayers are deviated from .lambda./4 and total optical thickness of the outer pair is made to be .lambda./2.

Reflector for excimer laser and excimer laser apparatus using the

A method of operating a laser is disclosed which includes irradiating an optical component in an atmosphere of dry air or dry inert gas with a laser beam, wherein the optical component is provided with an antireflection film having at least a layer of calcogenide glass and a layer of potassium chloride or lead fluoride.

Antireflection film

An antireflection film composed of a layer of arsenic triselenide having an optical thickness in the range between 2.518 and 2.783 .mu.m, a layer of potassium chloride having an optical thickness in the range between 1.151 and 1.272 .mu.m and a layer of arsenic triselenide having an optical thickness in the range between 0.577 and 0.749 .mu.m which are successively formed on a member of infrared radiation transmitting material formed of a mixture of thalium iodide and thalium bromide. The member provided with the three-layer antireflection film is used in an atmosphere of protective gas, such as dry air or dry N.sub.2 gas.

An anti-reflection coating film is disclosed which has a three-layer structure and is adapted to be deposited on a substrate made of a mixed crystal of thallium iodide and thallium bromide. The structure comprises a first arsenic triselenide layer, a second lead fluoride layer and a third arsenic triselenide layer for protection of the second layer.

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Sagamihara, Japan

Takashi Iwabuchi