Mitsubishi Denki Kabushiki Kaisha

Sumitomo Seika Chemicals Co., Ltd.

Rokko Pearl Trading Co., Ltd.

Renesas Technology Corp.

Matsushita Electric Industrial Co., Ltd.

Takashi Ito

Mikio Asakura

Tadaaki Yamauchi

Kiyohiro Furutani

Yasuhiko Tsukikawa

Kengo Aritomi

Takaharu Tsuji

Masao Yamawaki

Yasuyuki Ueda

Mutsumi Matsuoka

Miki Sakoda

Water-absorbing resin particles, in which a light transmittance at a wavelength of 425 nm when the water-absorbing resin particles are swollen 30 times with a physiological saline solution is 20% or more, are disclosed.

Water-absorbing resin particles and absorbent article

Disclosed is water-absorbent resin particles including: a crosslinked polymer having a monomer unit derived from an ethylenically unsaturated monomer including at least one compound selected from the group consisting of (meth)acrylic acid and a salt thereof, in which a proportion of (meth)acrylic acid and a salt thereof is 70 to 100 mol % with respect to a total amount of monomer units in the crosslinked polymer, an artificial urine permeation speed when the water-absorbent resin particles are swollen tenfold is 1.0 g/min or more and 35.0 g/min or less, a water retention capacity for a physiological saline solution is 32 to 60 g/g, and a contact angle measured in a test performed in the order of i) and ii) is 70 degrees or smaller.

Water absorbent resin particles

Water-absorbing resin particles have a repulsion rate of 5% or more according to the formula (h−h)/h×100(%) when a cylinder with an inner diameter of 25.4 mm, which has a mesh-like bottom onto which 0.2 g of the water-absorbing resin particles are sprinkled, is placed in a container having ion exchange water in an amount of 30 times a mass of the water-absorbing resin particles, where hrepresents a free swelling height (mm) of the water-absorbing resin particles after 1 minute from initiation of water absorption, hrepresents a height (mm) of the water-absorbing resin particles after a load of 1.3×10Pa is applied to the water-absorbing resin particles for 1 minute after 1 minute from initiation of the water absorption, and hrepresents a height (mm) of the water-absorbing resin particles after 1 minute from release of the load applied when measuring h.

Water-absorbing resin particles

Each cell unit has a cell plate electrically isolated from the cell plates in the other cell units.

Semiconductor memory device having dummy word line

The hook, as shown in FIG., FIG.and FIG., serves to latch between the pearlsat an optional position in the above-defined predetermined section of the necklace. Referring to FIG.and FIG., the hookhas an open endwhose opening is smaller than the outer diameter of the spacers. Opposite to the open endand at an innermost area of the hook, the hookalso has a spacer fitting areawhich is defined by a curve that matches an external circumference of the spacers. Specifically, as shown in FIG.a width dimension of the spacer fitting areais substantially equal to a width dimension of the spacer. The hookhas a smooth surface and such a thickness as to be comfortably inserted between the pearls. Thus, the hookavoids damaging the pearls

Ornament

Each of twin-cell units each formed of two DRAM cells has a cell plate electrically isolated from the cell plates in the other twin-cell units. Thereby, voltages on two storage nodes storing mutually complementary data in the same twin-cell unit change similarly to each other owing to capacitive coupling.

Semiconductor memory device having twin-cell units

A necklace has an adjustable loop size so that anyone having a thick or a slender neck can wear a necklace of one size so which is adjustable that it fits the wearer best. A hook formed by bending a material is provided at an end of the string necklace, formed by connecting pearls together with a string. A loop is formed by engaging the hook in a valley portion between any adjacent pearls. By engaging the hook in different valleys, it is possible to change the size of the necklace loop freely, so that it is possible to form a loop of the best size for each wearer.

Necklace

Complementary sub-decode signals to be provided to a sub-word line driver are separately generated through different circuits using individual power-supply voltages. Thus, the generation of a through current in the sub-word line driver is prevented.

Semiconductor memory device with a hierarchical word line configuration capable of preventing leakage current in a sub-word line driver

A color picture tube of the present invention comprises three in-line cathodes (,) aligned in the horizontal direction, a first focussing electrode (,) supplied with a focus voltage, a second focussing electrode (,) supplied with a dynamic voltage that changes in accordance with a deflection angle of the electron beams, a final accelerating electrode (,) supplied with an anode voltage, an intermediate auxiliary electrode (,) arranged between the second focussing electrode (,) and the final accelerating electrode (,). The intermediate auxiliary electrode (,) is supplied with a voltage between the voltage of the second focussing electrode (,) and the anode voltage. A non-axisymmetric electrostatic lens for focussing electron beams in the horizontal direction and diverging them in the vertical direction is formed between the first and second focussing electrodes (,). The power of the non-axisymmetric electrostatic lens changes in accordance with a deflection angle of the electron beam.

Color picture tube

In a predetermined multibit test mode, a multibit test circuit 114 issues determination result data pairs RDM0 and /RDM0 to RDM3 and /RDM3, each of which corresponds to match/mismatch of logics of data read from memory cells selected by one column select line in corresponding one of memory cell plane blocks. In each memory cell plane block, memory cell columns selected by one single column select line can be replaced as a unit. The unit of memory cell columns containing a defective memory cell is replaced in accordance with determination result data RDM0 and /RDM0 to RDM3 and /RDM3.

Semiconductor memory device having a multibit test mode

Semiconductor memory device allowing repair of a defective memory cell

A substrate voltage detecting circuit includes a detection node, a transistor responsive to a detected substrate voltage for changing a comparison voltage, a differential amplifier for comparing the comparison voltage with a prescribed reference voltage and outputting an enable signal when the comparison voltage exceeds the reference voltage, and a transistor turned on in response to the enable signal for fixing the reference voltage at an L level. The internal voltage detecting circuit further includes transistors for reducing current consumption. Consequently, the responsibility thereof is improved even with small power consumption.

Internal voltage detecting circuit having superior responsibility

An input first stage is used for inputting both addresses and address keys. A test mode setting circuit and a function setting circuit are disposed between the input first stage and an address buffer. Each function setting mode buffer latches an internal address signal when a signal/RAS falls. Further, a function signal generating circuit is initialized by a power-on reset signal when a power supply is turned on.

Growing community of inventors

Hyogo, Japan

Takashi Ito