Kyocera Corporation

Dainippon Screen Mfg. Co., Ltd.

Other

Mitsubishi Denki Kabushiki Kaisha

Screen Holdings Co., Ltd.

Takashi Ito

Takashi Ishihara

Eiichi Tamaki

Hideo Naomoto

Akihiro Takami

Takatoshi Chiba

Yu Nishino

Yukihiko Inagaki

Tsuyoshi Mitsuhashi

Yoshiteru Fukutomi

Kenji Sugimoto

Mao Omori

Katsushi Yoshioka

Nobuhiko Nishide

Takeo Okamoto

A first mass flow controller is provided in an inert gas pipe for feeding nitrogen gas. A second mass flow controller is provided in a reactive gas pipe for feeding ammonia. A joint pipe communicatively connects a joint portion of the inert gas pipe and the reactive gas pipe to a chamber for treating a semiconductor wafer. The joint pipe is provided with a mass flowmeter. A detector detects gas leakage by comparing a total value of flow rates of nitrogen controlled by the first mass flow controller and of ammonia controlled by the second mass flow controller with a measurement value of a flow rate of a treatment gas, obtained by the mass flowmeter.

Heat treatment apparatus of light irradiation type and heat treatment method

An object of the present invention is to provide a portable electronic device, a method, and a computer-readable recording medium, all of which are capable of preventing the portable electronic device from being taken away by another person while charging. The smartphone includes: a touch-screen display; a power receiving unit that receives power from electromagnetic waves that are supplied from a battery charger; and a controller that restricts execution of predetermined functions in a case in which the portable electronic device is separated from the battery charger in a state where the battery charger is supplying electromagnetic waves to the power receiving unit, and enables the predetermined functions to be executed in a case in which an authentication operation is performed via the touch-screen display after restricting execution of the predetermined functions.

Portable electronic device, method, and computer-readable recording medium

A substrate treating apparatus disclosed herein realizes improved throughput. The substrate treating apparatus according to this invention includes an antireflection film forming block, a resist film forming block and a developing block arranged in juxtaposition. Each block includes chemical treating modules, heat-treating modules and a single main transport mechanism. The main transport mechanism transports substrates within each block. Transfer of the substrates between adjacent blocks is carried out through substrate rests. The main transport mechanism of each block is not affected by movement of the main transport mechanisms of the adjoining blocks. Consequently, the substrates may be transported efficiently to improve the throughput of the substrate treating apparatus.

Substrate treating apparatus

The present invention relates to a method of producing a recrystallized-material-member by melting a given zone of a crystalline-material-member and moving the molten zone continuously along the crystalline-material-member to recrystallize a desired region of the crystalline-material-member, wherein dimension of the molten zone of the crystalline-material-member is controlled to be constant and/or quality of crystal of the recrystallized-material-member is controlled to be uniform.

Method of producing recrystallized-material-member, and apparatus and heating method therefor

Method of producing recrystallized-material-member, and apparatus and

Growing community of inventors

Kyoto, Japan

Takashi Ito