Sumitomo Electric Industries, Limited

Sakata Inx Corporation

Tohoku University

Takashi Ishizuka

Kei Fujii

Katsushi Akita

Youichi Nagai

Hideaki Nakahata

Yasuhiro Iguchi

Hiroshi Inada

Takuma Fuyuki

Takashi Go

Yasutsugu Mochizuki

Masaki Ueno

Fuminori Mitsuhashi

Yusuke Yoshizumi

Hiroki Mori

Takamichi Sumitomo

Susumu Yoshimoto

Tatsuya Tanabe

Yasunori Tateno

Hiroyuki Nagasawa

Kouhei Miura

Suguru Arikata

Maki Suemitsu

Kaoru Shibata

Hirokazu Fukidome

Koji Nishizuka

Yoshihiro Tsukuda

Toshiyuki Tanahashi

Tomohiro Doi

An object is to provide a printing ink that has high environmental friendliness and is excellent in quick dry-curability of a coating when a plasma is used as a curing system. A solution is to provide an ink composition for plasma curing including a photocatalyst compound and/or a composite of a metal component and a photocatalyst compound and to provide an additive for an ink composition for plasma curing, the additive including a photocatalyst compound and/or a composite of a metal component and a photocatalyst compound.

Ink composition for plasma curing and additive for ink compositions for plasma curing

A plasma-curable ink composition for offset printing having high reactivity with plasma and capable of being hardened into a sufficiently dried state even in the use of plasma generated by a remote-type plasma generator, and a method for producing printed matter and a method for printing information using the same. The plasma-curable ink composition for offset printing comprises a pigment, a binder resin, and at least one specific ingredient selected from the group consisting of castor oil, polymerized oil, and alkyd resins having an acid value of 10 mg KOH/g or more.

Plasma-curable offset printing ink composition, method for producing printed matter using same, and printing method

A printing apparatus is provided that has: a printing part that performs printing by depositing a recording composition on the surface of a printing medium; a plasma generation part that is constituted by a plasma generation chamber having an introduction port for introducing a gaseous flow of plasma material gas to the interior, wherein the plasma material gas is converted to a plasma in the interior to form a gaseous flow of plasma-modified gas, as well as a plasma release port for releasing the gaseous flow to the exterior; and a plasma irradiation part that brings a gaseous flow released from the plasma release port, which contains the plasma-modified gas and/or plasma-quenched gas formed therefrom, in contact with the surface of the printing medium that has been printed at the printing part. The printing apparatus can fully dry/cure a printed recording composition.

Printing apparatus and method for manufacturing printed matter

A semiconductor laminate includes a substrate composed of InP, a first buffer layer composed of InP containing less than 1&#xd7;10cmSb and disposed on the substrate, and a second buffer layer composed of InGaAs and disposed on the first buffer layer. The first buffer layer includes a first layer that has a higher concentration of Sb than the substrate and that is arranged to include a first main surface which is a main surface of the first buffer layer on the substrate side. The second buffer layer includes a second layer that has a lower concentration of Sb than the first layer and that is arranged to include a second main surface which is a main surface of the second buffer layer on the first buffer layer side.

Semiconductor laminate and light-receiving element

A semiconductor laminate includes a substrate formed of a group III-V compound semiconductor and a quantum well structure disposed on the substrate. The quantum well structure includes a second element layer formed of a group III-V compound semiconductor and containing Sb and a first element layer formed of a group III-V compound semiconductor and disposed in contact with the second element layer. In the first element layer, the thickness of a region in which the content of Sb decreases in a direction away from the substrate from 80% of the maximum content of Sb in the second element layer to 6% of the maximum content is from 0.5 nm to 3.0 nm inclusive.

Semiconductor laminate, light-receiving element, and method for manufacturing semiconductor laminate

A semiconductor stacked body includes a base layer containing a III-V group compound semiconductor, a light-receiving layer containing a III-V group compound semiconductor, a control layer containing a III-V group compound semiconductor and disposed in contact with the light-receiving layer, a diffusion blocking layer containing a III-V group compound semiconductor and a p-type impurity that generates a p-type carrier, the diffusion blocking layer having a p-type impurity concentration of 1&#xd7;10cmor less, and a contact layer containing a III-V group compound semiconductor and having p-type conductivity. These layers are stacked in this order. The concentration of an element in the control layer, the element being identical to a group V element contained in the light-receiving layer, is lower on a main surface of the control layer adjacent to the diffusion blocking layer than on a main surface of the control layer adjacent to the light-receiving layer.

Semiconductor stacked body and light-receiving device

A vertical cavity surface emitting laser includes: a supporting base having a principal surface including III-V compound semiconductor containing gallium and arsenic as constituent elements; and a post disposed on the principal surface. The post has a lower spacer region including a III-V compound semiconductor containing gallium and arsenic as group-III elements, and an active layer having a quantum well structure disposed on the lower spacer region. The quantum well structure has a concentration of carbon in a range of 2&#xd7;10cmor more to 5&#xd7;10cmor less. The quantum well structure includes a well layer and a barrier layer. The well layer includes a III-V compound semiconductor containing indium as a group-III element, and the barrier layer includes a III-V compound semiconductor containing indium and aluminum as group-III elements. The lower spacer region is disposed between the supporting base and the active layer.

Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laser

A layered semiconductor includes a base layer including a substrate and a buffer layer, and a drift layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type. The drift layer has an average n-type impurity concentration of 1.5&#xd7;10cmor less in a radial direction of the substrate, and the difference between the maximum n-type impurity concentration and the minimum n-type impurity concentration is 1.5&#xd7;10cmor less.

Layered semiconductor having base layer including GaN substrate

Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor deviceincludes an absorption layerof a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate, and an InP contact layerlocated on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z&#x2267;&#x2212;0.4x+24.6 is satisfied.

Semiconductor device, optical sensor device and semiconductor device manufacturing method

A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion. A region in which a value of G'/G in Raman spectrometry is not less than 1.2 is not less than 10% in an area ratio in an exposed surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion.

Laminated body and electronic device

A semiconductor device and the like having high quantum efficiency or high sensitivity in a near-infrared to infrared region is provided. The semiconductor device includes: a substrate; a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a layer a and a layer b; and a crystal-adjusting layer disposed between the substrate and the multiple quantum well structure. The crystal-adjusting layer includes a first adjusting layer which is made of the same material as the substrate and is in contact with the substrate, and a second adjusting layer which is made of the same material as the layer a or the layer b of the multiple quantum well structure and is in contact with the multiple quantum well structure.

Semiconductor device and method for manufacturing the same

A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate, and includes a pixel. The photodiode includes an absorption layer of a type II MQW structure, which is located on the substrate. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer has a higher potential of a valence band, is thinner than the thickness of the other layer.

Photodiode, optical sensor device, and photodiode manufacturing method

An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layergrown on the absorption layercontains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer. In the group III-V compound semiconductor photo detector, the InP layercontains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layergenerate holes, the silicon contained in the InP layercompensates for the generated carriers. As a result, the second portionof the InP layerhas sufficient n-type conductivity.

Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer

Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed. The production method includes a step of growing an antimony (Sb)-containing layer on a substrateby metal-organic vapor phase epitaxy using only metal-organic sources; and a step of growing, on the antimony-containing layer, an antimony-free layer including a window layer, wherein, from the growth of the antimony-containing layer to completion of the growth of the window layer, the growth is performed at a growth temperature of 425&#xb0; C. or more and 525&#xb0; C. or less.

Epitaxial wafer, photodiode, optical sensor device, and methods for producing epitaxial wafer and photodiode

Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor deviceincludes an absorption layerof a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate, and an InP contact layerlocated on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z&#x2267;&#x2212;0.4+24.6 is satisfied.

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Itami, Japan

Takashi Ishizuka