Sumitomo Electric Industries, Limited

A.l.m.t. Corporation

Mitsubishi Gas Chemical Company, Inc.

Takashi Ishii

Kenjiro Higaki

Yasushi Tsuzuki

Sadamu Ishidu

Hirohiko Nakata

Masuhiro Natsuhara

Noriyuki Kato

Akira Kuibira

Munenori Shiratake

Shu Yoshida

Kiyoshi Yoshida

Kazuaki Kaneko

Yasuyuki Matsui

Kazutaka Sasaki

Yoshio Nishimura

Tetsuo Koshitsuka

Hirohito Ishizuka

Hideaki Morigami

Kentarou Ishihara

Kouji Hirose

Teruo Amoh

Eiko Kuwabara

Yuki Kumagai

Kazuya Sekihara

Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material () is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire () that is placed approximately parallel to the main surface. The manufacturing method for the heat sink material () is provided with the steps of placing the discharge wire () on a material () to be approximately parallel to the main surface, and carrying out the discharging process on the material () using the discharge wire () placed as described above.

Manufacturing a heat sink material using a discharge wire

The object of the present invention is to provide a light-emitting element mounting member and a semiconductor device using the same that is easy to process and that allows adequate heat dissipation. A light-emitting element mounting memberincludes: a substrateincluding an element mounting surfacemounting a semiconductor light-emitting elementand first and second conductive regionsdisposed on the element mounting surfaceand connected to the semiconductor light-emitting elementa reflective memberincluding a reflective surfacedefining an internal spacefor housing the semiconductor light-emitting elementand containing a metal disposed on the element mounting surfaceand a metal layerdisposed on the reflective surfaceThe reflective surfaceis sloped relative to the element mounting surfaceso that a diameter of the internal spaceis greater away from the element mounting surface

Light emitting element mounting member, and semiconductor device using the same

A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor deviceis equipped with a substrate, having a bottom surfaceand an element mounting surfacewhich is positioned on the opposite side of bottom surface, and a semiconductor element, having a main surfacewhich is mounted onto element mounting surface. With L being the length in the long direction of main surfaceand H being the distance between bottom surfaceand element mounting surface, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surfaceis a cavity, and elementis provided in cavity. A metal layeris provided on the surface of cavity. In addition, when an electrodewhich connects to an external part is provided on main surface, on the cavity side of the part which connects with electrode, main surfaceis provided with a groove. The groove is for preventing outward flow of connection memberof electrode

Semiconductor device

A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor deviceis equipped with a substrate, having a bottom surfaceand an element mounting surfacewhich is positioned on the opposite side of bottom surface, and a semiconductor element, having a main surfacewhich is mounted onto element mounting surface. With L being the length in the long direction of main surfaceand H being the distance between bottom surfaceand element mounting surface, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surfaceis a cavity, and elementis provided in cavity. A metal layeris provided on the surface of cavity

A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submountcomprises (a) a substrate; and (b) a solder layerformed on the top surfaceof the substrate. The solder layerbefore melting has a surface roughness, Ra, of at most 0.18 &#x3bc;m. It is more desirable that the solder layerbefore melting have a surface roughness, Ra, of at most 0.15 &#x3bc;m, yet more desirably at most 0.10 &#x3bc;m. A semiconductor unitcomprises the submountand a laser diodemounted on the solder layerof the submount

Submount for mounting semiconductor device

The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength. A submountis equipped with a substrateand a solder layerformed on a primary surfaceof the substrate. The density of the solder layeris at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer. The solder layercontains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layerbefore it is melted is formed on the substrateand includes an Ag filmand an Sn filmformed on the Ag film. The submountfurther includes an Au filmformed between the substrateand the solder layer

Submount and semiconductor device

A submount can mount on it a semiconductor light-emitting device with high bonding strength, and a semiconductor unit incorporates the submount. The submount comprises (a) a submount substrate, (b) a solder layer formed at the top surface of the submount substrate, and (c) a solder intimate-contact layer that is formed between the submount substrate and the solder layer and that has a structure in which a transition element layer consisting mainly of at least one type of transition element and a precious metal layer consisting mainly of at least one type of precious metal are piled up. In the above structure, the transition element layer is formed at the submount-substrate side. The semiconductor unit is provided with a semiconductor light-emitting device mounted on the solder layer of the submount.

A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.

Wafer holder for semiconductor manufacturing apparatus, and method of manufacturing the wafer holder

A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece, paste containing metal particles is applied and fired to form a heater circuit pattern as a conductive layer. Between the surface of the sintered aluminum nitride piece having the heater circuit pattern formed thereon and another sintered aluminum nitride piece, a glass layer is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces together.

Wafer holder for semiconductor manufacturing apparatus, method of manufacturing wafer holder, and semiconductor manufacturing apparatus

An aluminum nitride sintered body with high heat conductivity and high strength as well as a method of inexpensively manufacturing such an aluminum nitride sintered body at a low temperature are provided. The aluminum nitride sintered body is manufactured by adding a compound of at least one type of rare earth element (R) selected from La, Ce, Pr, Sm; and Eu, Y compound, Ca compound, and Al compound to an AlN powder and sintering the resulting mixture at a temperature of 1550&deg; C. to 1750&deg; C. The content of oxygen forming Al O existing in an aluminate with rare earth element (R), Y and Ca and oxygen forming independently existing Al O is calculated as 0.01 to 5.0% by weight, heat conductivity is 166 to 200 W/mK, and bending strength is at least 300 MPa.

Growing community of inventors

Itami, Japan

Takashi Ishii